ON Semiconductor CY62126DV30L-55BVXE
- Part Number:
- CY62126DV30L-55BVXE
- Manufacturer:
- ON Semiconductor
- Ventron No:
- 7372818-CY62126DV30L-55BVXE
- Description:
- MoBL® 48 Pin Memory IC MoBL® Series 8mm mm
- Datasheet:
- CY62126DV30 MoBL
ON Semiconductor CY62126DV30L-55BVXE technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor CY62126DV30L-55BVXE.
- Mounting TypeSurface Mount
- Package / Case48-VFBGA
- Surface MountYES
- Operating Temperature-40°C~125°C TA
- PackagingTray
- SeriesMoBL®
- JESD-609 Codee1
- Pbfree Codeyes
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)3 (168 Hours)
- Number of Terminations48
- Terminal FinishTIN SILVER COPPER
- TechnologySRAM - Asynchronous
- Voltage - Supply2.2V~3.6V
- Terminal PositionBOTTOM
- Peak Reflow Temperature (Cel)260
- Number of Functions1
- Supply Voltage3V
- Terminal Pitch0.75mm
- Reach Compliance Codeunknown
- Time@Peak Reflow Temperature-Max (s)20
- Pin Count48
- JESD-30 CodeR-PBGA-B48
- Qualification StatusCOMMERCIAL
- Supply Voltage-Max (Vsup)3.6V
- Supply Voltage-Min (Vsup)2.2V
- Memory Size1Mb 64K x 16
- Memory TypeVolatile
- Memory FormatSRAM
- Memory InterfaceParallel
- Organization64KX16
- Memory Width16
- Write Cycle Time - Word, Page55ns
- Memory Density1048576 bit
- Access Time (Max)55 ns
- Length8mm
- Height Seated (Max)1mm
- Width6mm
- RoHS StatusROHS3 Compliant
CY62126DV30L-55BVXE Overview
Its memory type can be classified as Volatile. It comes in a Tray. It is available in 48-VFBGA case. The memory size of the chip is 1Mb 64K x 16 Mb. This device utilizes a SRAM format memory which is of mainstream design. With an extended designed operating temperature of -40°C~125°C TA, this device is capable of lots of demanding applications. It is supplied votage within 2.2V~3.6V. Its recommended mounting type is Surface Mount. 48 terminations are planted on the chip. This part supports as many as 1 functions for the comprehensive working procedure. This ic memory chip is designed to be supplied with 3V. This memory device has 48 pins, indicating it has 48 memory locations. As a member of the MoBL® series memory devices, this part plays an important role for its target applications.
CY62126DV30L-55BVXE Features
Package / Case: 48-VFBGA
CY62126DV30L-55BVXE Applications
There are a lot of Rochester Electronics, LLC
CY62126DV30L-55BVXE Memory applications.
Cache memory
cell phones
eSRAM
mainframes
multimedia computers
networking
personal computers
servers
supercomputers
telecommunications
Its memory type can be classified as Volatile. It comes in a Tray. It is available in 48-VFBGA case. The memory size of the chip is 1Mb 64K x 16 Mb. This device utilizes a SRAM format memory which is of mainstream design. With an extended designed operating temperature of -40°C~125°C TA, this device is capable of lots of demanding applications. It is supplied votage within 2.2V~3.6V. Its recommended mounting type is Surface Mount. 48 terminations are planted on the chip. This part supports as many as 1 functions for the comprehensive working procedure. This ic memory chip is designed to be supplied with 3V. This memory device has 48 pins, indicating it has 48 memory locations. As a member of the MoBL® series memory devices, this part plays an important role for its target applications.
CY62126DV30L-55BVXE Features
Package / Case: 48-VFBGA
CY62126DV30L-55BVXE Applications
There are a lot of Rochester Electronics, LLC
CY62126DV30L-55BVXE Memory applications.
Cache memory
cell phones
eSRAM
mainframes
multimedia computers
networking
personal computers
servers
supercomputers
telecommunications
CY62126DV30L-55BVXE More Descriptions
Obsolete 3-STATE 2006 BOTTOM SRAM Memory -40C~125C TA 2.2V 1Mb 64K x 16 0.00001A
SRAM Chip Async Single 2.5V/3.3V 1M-Bit 64K x 16 55ns 48-Pin VFBGA
64K X 16 STANDARD SRAM 55 ns PBGA48
IC SRAM 1MBIT PARALLEL 48VFBGA
SRAM Chip Async Single 2.5V/3.3V 1M-Bit 64K x 16 55ns 48-Pin VFBGA
64K X 16 STANDARD SRAM 55 ns PBGA48
IC SRAM 1MBIT PARALLEL 48VFBGA
The three parts on the right have similar specifications to CY62126DV30L-55BVXE.
-
ImagePart NumberManufacturerMounting TypePackage / CaseSurface MountOperating TemperaturePackagingSeriesJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsTerminal FinishTechnologyVoltage - SupplyTerminal PositionPeak Reflow Temperature (Cel)Number of FunctionsSupply VoltageTerminal PitchReach Compliance CodeTime@Peak Reflow Temperature-Max (s)Pin CountJESD-30 CodeQualification StatusSupply Voltage-Max (Vsup)Supply Voltage-Min (Vsup)Memory SizeMemory TypeMemory FormatMemory InterfaceOrganizationMemory WidthWrite Cycle Time - Word, PageMemory DensityAccess Time (Max)LengthHeight Seated (Max)WidthRoHS StatusFactory Lead TimeSupplier Device PackageAccess TimeView Compare
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CY62126DV30L-55BVXESurface Mount48-VFBGAYES-40°C~125°C TATrayMoBL®e1yesObsolete3 (168 Hours)48TIN SILVER COPPERSRAM - Asynchronous2.2V~3.6VBOTTOM26013V0.75mmunknown2048R-PBGA-B48COMMERCIAL3.6V2.2V1Mb 64K x 16VolatileSRAMParallel64KX161655ns1048576 bit55 ns8mm1mm6mmROHS3 Compliant----
-
Surface Mount44-TSOP (0.400, 10.16mm Width)--40°C~85°C TATape & Reel (TR)MoBL®--Active3 (168 Hours)--SRAM - Asynchronous2.2V~3.6V------------4Mb 256K x 16VolatileSRAMParallel--45ns-----ROHS3 Compliant13 Weeks--
-
Surface Mount48-VFBGA--40°C~125°C TATrayMoBL®--Obsolete3 (168 Hours)--SRAM - Asynchronous2.7V~3.3V------------2Mb 128K x 16VolatileSRAMParallel--70ns-----ROHS3 Compliant-48-VFBGA (6x8)70ns
-
Surface Mount32-TFSOP (0.724, 18.40mm Width)YES-40°C~125°C TATubeMoBL®e3/e4yesObsolete3 (168 Hours)32MATTE TIN/NICKEL PALLADIUM GOLDSRAM - Asynchronous4.5V~5.5VDUAL26015V0.5mmunknown2032R-PDSO-G32COMMERCIAL5.5V4.5V1Mb 128K x 8VolatileSRAMParallel128KX8870ns1048576 bit70 ns18.4mm1.2mm8mmROHS3 Compliant---
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