Cypress Semiconductor Corp CY62126EV30LL-55ZSXE
- Part Number:
- CY62126EV30LL-55ZSXE
- Manufacturer:
- Cypress Semiconductor Corp
- Ventron No:
- 3720629-CY62126EV30LL-55ZSXE
- Description:
- IC SRAM 1MBIT 55NS 44TSOP
- Datasheet:
- CY62126EV30
Cypress Semiconductor Corp CY62126EV30LL-55ZSXE technical specifications, attributes, parameters and parts with similar specifications to Cypress Semiconductor Corp CY62126EV30LL-55ZSXE.
- Factory Lead Time18 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / Case44-TSOP (0.400, 10.16mm Width)
- Number of Pins44
- Operating Temperature-40°C~125°C TA
- PackagingTube
- Published1998
- SeriesMoBL®
- JESD-609 Codee4
- Part StatusActive
- Moisture Sensitivity Level (MSL)3 (168 Hours)
- Number of Terminations44
- ECCN CodeEAR99
- Terminal FinishNickel/Palladium/Gold (Ni/Pd/Au)
- TechnologySRAM - Asynchronous
- Voltage - Supply2.2V~3.6V
- Terminal PositionDUAL
- Peak Reflow Temperature (Cel)260
- Number of Functions1
- Supply Voltage3V
- Terminal Pitch0.8mm
- Reflow Temperature-Max (s)30
- Base Part NumberCY62126
- Pin Count44
- Operating Supply Voltage3V
- Supply Voltage-Max (Vsup)3.6V
- Supply Voltage-Min (Vsup)2.2V
- Memory Size1Mb 64K x 16
- Number of Ports1
- Nominal Supply Current35mA
- Memory TypeVolatile
- Memory FormatSRAM
- Memory InterfaceParallel
- Output Characteristics3-STATE
- Memory Width16
- Write Cycle Time - Word, Page55ns
- Address Bus Width16b
- Density1 Mb
- Standby Current-Max0.00003A
- Access Time (Max)55 ns
- I/O TypeCOMMON
- Sync/AsyncAsynchronous
- Word Size16b
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
CY62126EV30LL-55ZSXE Overview
This product features a surface mount design and is compliant with JESD-609 Code e4. It operates using SRAM technology in an asynchronous manner. The terminal position is dual, and it can withstand a peak reflow temperature of 260 degrees Celsius. With a pin count of 44, it requires an operating supply voltage of 3V. The memory size is 1Mb, specifically 64K x 16, and it has 1 port. The maximum access time is 55 ns.
CY62126EV30LL-55ZSXE Features
Package / Case: 44-TSOP (0.400, 10.16mm Width)
44 Pins
Operating Supply Voltage:3V
I/O Type: COMMON
CY62126EV30LL-55ZSXE Applications
There are a lot of Cypress Semiconductor Corp CY62126EV30LL-55ZSXE Memory applications.
Camcorders
main computer memory
embedded logic
graphics card
eSRAM
cell phones
nonvolatile BIOS memory
supercomputers
hard disk drive (HDD)
personal digital assistants
This product features a surface mount design and is compliant with JESD-609 Code e4. It operates using SRAM technology in an asynchronous manner. The terminal position is dual, and it can withstand a peak reflow temperature of 260 degrees Celsius. With a pin count of 44, it requires an operating supply voltage of 3V. The memory size is 1Mb, specifically 64K x 16, and it has 1 port. The maximum access time is 55 ns.
CY62126EV30LL-55ZSXE Features
Package / Case: 44-TSOP (0.400, 10.16mm Width)
44 Pins
Operating Supply Voltage:3V
I/O Type: COMMON
CY62126EV30LL-55ZSXE Applications
There are a lot of Cypress Semiconductor Corp CY62126EV30LL-55ZSXE Memory applications.
Camcorders
main computer memory
embedded logic
graphics card
eSRAM
cell phones
nonvolatile BIOS memory
supercomputers
hard disk drive (HDD)
personal digital assistants
CY62126EV30LL-55ZSXE More Descriptions
CY62126EV30 Series 1 Mb (64 K x 16) 2.2 - 3.6 V 55 ns Static RAM - TSOP-44
SRAM Chip Async Single 3V 1M-Bit 64K x 16 55ns 44-Pin TSOP-II
Psoc4/Tray |Cypress Infineon Technologies CY62126EV30LL-55ZSXE
IC SRAM 1MBIT PARALLEL 44TSOP II
SRAM 1Mb 3V 55ns 64K x 16 LP SRAM
SRAM Chip Async Single 3V 1M-Bit 64K x 16 55ns 44-Pin TSOP-II
Psoc4/Tray |Cypress Infineon Technologies CY62126EV30LL-55ZSXE
IC SRAM 1MBIT PARALLEL 44TSOP II
SRAM 1Mb 3V 55ns 64K x 16 LP SRAM
The three parts on the right have similar specifications to CY62126EV30LL-55ZSXE.
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ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsOperating TemperaturePackagingPublishedSeriesJESD-609 CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishTechnologyVoltage - SupplyTerminal PositionPeak Reflow Temperature (Cel)Number of FunctionsSupply VoltageTerminal PitchReflow Temperature-Max (s)Base Part NumberPin CountOperating Supply VoltageSupply Voltage-Max (Vsup)Supply Voltage-Min (Vsup)Memory SizeNumber of PortsNominal Supply CurrentMemory TypeMemory FormatMemory InterfaceOutput CharacteristicsMemory WidthWrite Cycle Time - Word, PageAddress Bus WidthDensityStandby Current-MaxAccess Time (Max)I/O TypeSync/AsyncWord SizeRadiation HardeningRoHS StatusLead FreeSurface MountPbfree CodeReach Compliance CodeTime@Peak Reflow Temperature-Max (s)JESD-30 CodeQualification StatusOrganizationMemory DensityLengthHeight Seated (Max)WidthView Compare
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CY62126EV30LL-55ZSXE18 WeeksSurface MountSurface Mount44-TSOP (0.400, 10.16mm Width)44-40°C~125°C TATube1998MoBL®e4Active3 (168 Hours)44EAR99Nickel/Palladium/Gold (Ni/Pd/Au)SRAM - Asynchronous2.2V~3.6VDUAL26013V0.8mm30CY62126443V3.6V2.2V1Mb 64K x 16135mAVolatileSRAMParallel3-STATE1655ns16b1 Mb0.00003A55 nsCOMMONAsynchronous16bNoROHS3 CompliantLead Free------------
-
--Surface Mount48-VFBGA--40°C~125°C TATray-MoBL®e1Obsolete3 (168 Hours)48-TIN SILVER COPPERSRAM - Asynchronous2.2V~3.6VBOTTOM26013V0.75mm--48-3.6V2.2V1Mb 64K x 16--VolatileSRAMParallel-1655ns---55 ns----ROHS3 Compliant-YESyesunknown20R-PBGA-B48COMMERCIAL64KX161048576 bit8mm1mm6mm
-
13 Weeks-Surface Mount44-TSOP (0.400, 10.16mm Width)--40°C~85°C TATape & Reel (TR)-MoBL®-Active3 (168 Hours)---SRAM - Asynchronous1.65V~2.2V-----------4Mb 256K x 16--VolatileSRAMParallel--55ns--------ROHS3 Compliant------------
-
--Surface Mount32-TFSOP (0.465, 11.80mm Width)--40°C~125°C TATube-MoBL®-Obsolete3 (168 Hours)32-NOT SPECIFIEDSRAM - Asynchronous4.5V~5.5VDUAL26015V0.5mm--32-5.5V4.5V1Mb 128K x 8--VolatileSRAMParallel-870ns---70 ns----ROHS3 Compliant-YESyesunknown20R-PDSO-G32COMMERCIAL128KX81048576 bit11.8mm1.2mm8mm
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