CY14V101LA-BA45XI

Cypress Semiconductor Corp CY14V101LA-BA45XI

Part Number:
CY14V101LA-BA45XI
Manufacturer:
Cypress Semiconductor Corp
Ventron No:
3236422-CY14V101LA-BA45XI
Description:
IC NVSRAM 1MBIT 45NS 48FBGA
ECAD Model:
Datasheet:
CY14V101LA-BA45XI

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Specifications
Cypress Semiconductor Corp CY14V101LA-BA45XI technical specifications, attributes, parameters and parts with similar specifications to Cypress Semiconductor Corp CY14V101LA-BA45XI.
  • Factory Lead Time
    16 Weeks
  • Contact Plating
    Copper, Silver, Tin
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    48-TFBGA
  • Number of Pins
    48
  • Operating Temperature
    -40°C~85°C TA
  • Packaging
    Tray
  • Published
    2009
  • JESD-609 Code
    e1
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    3 (168 Hours)
  • Number of Terminations
    48
  • ECCN Code
    EAR99
  • Terminal Finish
    Tin/Silver/Copper (Sn/Ag/Cu)
  • HTS Code
    8542.32.00.41
  • Subcategory
    SRAMs
  • Technology
    NVSRAM (Non-Volatile SRAM)
  • Voltage - Supply
    2.7V~3.6V
  • Terminal Position
    BOTTOM
  • Peak Reflow Temperature (Cel)
    260
  • Number of Functions
    1
  • Supply Voltage
    3.3V
  • Terminal Pitch
    0.75mm
  • Reflow Temperature-Max (s)
    30
  • Base Part Number
    CY14V101
  • Pin Count
    48
  • Operating Supply Voltage
    3.3V
  • Supply Voltage-Max (Vsup)
    3.6V
  • Supply Voltage-Min (Vsup)
    3V
  • Memory Size
    1Mb 128K x 8
  • Nominal Supply Current
    52mA
  • Memory Type
    Non-Volatile
  • Memory Format
    NVSRAM
  • Memory Interface
    Parallel
  • Data Bus Width
    8b
  • Organization
    128KX8
  • Memory Width
    8
  • Write Cycle Time - Word, Page
    45ns
  • Density
    1 Mb
  • Standby Current-Max
    0.008A
  • Access Time (Max)
    45 ns
  • Word Size
    8b
  • Height Seated (Max)
    1.2mm
  • Length
    10mm
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
CY14V101LA-BA45XI Overview
Cypress Semiconductor Corp is a well-known brand in the semiconductor industry, known for its high-quality and reliable products. One of its popular offerings is the Memory chip, which falls under the Memory category. This chip has been designed to withstand a wide range of temperatures, with an operating temperature range of -40°C to 85°C TA. This makes it suitable for use in various environments and applications, providing users with flexibility and versatility. The Memory chip was first published in 2009, showcasing Cypress Semiconductor Corp's commitment to constantly innovate and improve their products. It has been certified with a JESD-609 Code of e1, indicating its compliance with industry standards and regulations. This further adds to the credibility and trustworthiness of the brand and its products. One of the key features of this Memory chip is its technology, which is NVSRAM (Non-Volatile SRAM). This means that the chip is able to retain data even when power is turned off, providing users with peace of mind and ensuring that important data is not lost. Additionally, the chip has a maximum reflow temperature of 30 seconds, making it easy to integrate into various electronic devices during the manufacturing process. The Memory chip has a pin count of 48, providing a sufficient number of connections for efficient data transfer and communication. It operates on a supply voltage of 3.3V, making it energy-efficient and suitable for use in low-power devices. With a memory size of 1Mb 128K x 8 and a data bus width of 8b, this chip offers a high storage capacity and efficient data transfer, making it ideal for use in a wide range of applications. Its density of 1 Mb further adds to its storage capabilities, allowing users to store large amounts of data without compromising on performance. In conclusion, the Cypress Semiconductor Corp Memory chip is a highly advanced and reliable product that offers a wide range of features and capabilities. Its parameters, such as operating temperature, technology, pin count, and memory size, make it a versatile and efficient choice for various electronic devices and applications. With its reputation for quality and innovation, Cypress Semiconductor Corp continues to be a top choice for customers in the semiconductor industry.

CY14V101LA-BA45XI Features
Package / Case: 48-TFBGA
48 Pins
Operating Supply Voltage:3.3V

CY14V101LA-BA45XI Applications
There are a lot of Cypress Semiconductor Corp CY14V101LA-BA45XI Memory applications.

servers
networks
nonvolatile BIOS memory
workstations,
multimedia computers
DVD disk buffer
printers
hard disk drive (HDD)
main computer memory
personal digital assistants
CY14V101LA-BA45XI More Descriptions
CY14V101LA Series 1 Mb (128 K × 8) 45 ns 3.6 V Surface Mount nvSRAM - FBGA-48
Non Volatile Srams/Tray |Cypress Infineon Technologies CY14V101LA-BA45XI
NVRAM NVSRAM Parallel 1Mbit 3.3V 48-Pin FBGA Tray
2.7V~3.6V 1Mbit TFBGA-48 SRAM ROHS
IC NVSRAM 1MBIT PARALLEL 48FBGA
NVRAM 1Mb 45ns 128K x 8 nvSRAM
Product Comparison
The three parts on the right have similar specifications to CY14V101LA-BA45XI.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Contact Plating
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Operating Temperature
    Packaging
    Published
    JESD-609 Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Terminal Finish
    HTS Code
    Subcategory
    Technology
    Voltage - Supply
    Terminal Position
    Peak Reflow Temperature (Cel)
    Number of Functions
    Supply Voltage
    Terminal Pitch
    Reflow Temperature-Max (s)
    Base Part Number
    Pin Count
    Operating Supply Voltage
    Supply Voltage-Max (Vsup)
    Supply Voltage-Min (Vsup)
    Memory Size
    Nominal Supply Current
    Memory Type
    Memory Format
    Memory Interface
    Data Bus Width
    Organization
    Memory Width
    Write Cycle Time - Word, Page
    Density
    Standby Current-Max
    Access Time (Max)
    Word Size
    Height Seated (Max)
    Length
    Radiation Hardening
    RoHS Status
    Lead Free
    Surface Mount
    Time@Peak Reflow Temperature-Max (s)
    JESD-30 Code
    Qualification Status
    Power Supplies
    Operating Mode
    Supply Current-Max
    Memory Density
    Width
    Reach Compliance Code
    Supplier Device Package
    Access Time
    View Compare
  • CY14V101LA-BA45XI
    CY14V101LA-BA45XI
    16 Weeks
    Copper, Silver, Tin
    Surface Mount
    Surface Mount
    48-TFBGA
    48
    -40°C~85°C TA
    Tray
    2009
    e1
    Active
    3 (168 Hours)
    48
    EAR99
    Tin/Silver/Copper (Sn/Ag/Cu)
    8542.32.00.41
    SRAMs
    NVSRAM (Non-Volatile SRAM)
    2.7V~3.6V
    BOTTOM
    260
    1
    3.3V
    0.75mm
    30
    CY14V101
    48
    3.3V
    3.6V
    3V
    1Mb 128K x 8
    52mA
    Non-Volatile
    NVSRAM
    Parallel
    8b
    128KX8
    8
    45ns
    1 Mb
    0.008A
    45 ns
    8b
    1.2mm
    10mm
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • CY14B104NA-BA25IT
    11 Weeks
    -
    -
    Surface Mount
    48-TFBGA
    -
    -40°C~85°C TA
    Tape & Reel (TR)
    2011
    e1
    Last Time Buy
    3 (168 Hours)
    48
    3A991.B.2.A
    Tin/Silver/Copper (Sn/Ag/Cu)
    8542.32.00.41
    SRAMs
    NVSRAM (Non-Volatile SRAM)
    2.7V~3.6V
    BOTTOM
    260
    1
    3V
    0.75mm
    -
    CY14B104
    -
    -
    3.6V
    2.7V
    4Mb 256K x 16
    -
    Non-Volatile
    NVSRAM
    Parallel
    -
    256KX16
    16
    25ns
    -
    0.005A
    25 ns
    -
    1.2mm
    10mm
    -
    Non-RoHS Compliant
    -
    YES
    30
    R-PBGA-B48
    Not Qualified
    3/3.3V
    ASYNCHRONOUS
    0.07mA
    4194304 bit
    6mm
    -
    -
    -
  • CY14B104L-ZS45XI
    -
    -
    -
    Surface Mount
    44-TSOP (0.400, 10.16mm Width)
    -
    -40°C~85°C TA
    Tube
    -
    -
    Obsolete
    3 (168 Hours)
    44
    -
    -
    -
    -
    NVSRAM (Non-Volatile SRAM)
    2.7V~3.6V
    DUAL
    -
    1
    3V
    0.8mm
    -
    -
    44
    -
    3.6V
    2.7V
    4Mb 512K x 8
    -
    Non-Volatile
    NVSRAM
    Parallel
    -
    512KX8
    8
    45ns
    -
    -
    45 ns
    -
    1.194mm
    18.415mm
    -
    ROHS3 Compliant
    -
    YES
    -
    R-PDSO-G44
    COMMERCIAL
    -
    ASYNCHRONOUS
    -
    4194304 bit
    10.16mm
    unknown
    -
    -
  • CY14B104L-BA45XC
    -
    -
    -
    Surface Mount
    48-TFBGA
    -
    0°C~70°C TA
    Tube
    -
    -
    Obsolete
    3 (168 Hours)
    -
    -
    -
    -
    -
    NVSRAM (Non-Volatile SRAM)
    2.7V~3.6V
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    4Mb 512K x 8
    -
    Non-Volatile
    NVSRAM
    Parallel
    -
    -
    -
    45ns
    -
    -
    -
    -
    -
    -
    -
    Non-RoHS Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    48-FBGA (6x10)
    45ns
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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