Cypress Semiconductor Corp CY14B108L-ZS20XI
- Part Number:
- CY14B108L-ZS20XI
- Manufacturer:
- Cypress Semiconductor Corp
- Ventron No:
- 3229919-CY14B108L-ZS20XI
- Description:
- IC NVSRAM 8MBIT 20NS 44TSOP
- Datasheet:
- CY14B108L-ZS20XI
Cypress Semiconductor Corp CY14B108L-ZS20XI technical specifications, attributes, parameters and parts with similar specifications to Cypress Semiconductor Corp CY14B108L-ZS20XI.
- Factory Lead Time14 Weeks
- Contact PlatingGold
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / Case44-TSOP (0.400, 10.16mm Width)
- Number of Pins44
- Operating Temperature-40°C~85°C TA
- PackagingTray
- Published2007
- JESD-609 Codee4
- Part StatusActive
- Moisture Sensitivity Level (MSL)3 (168 Hours)
- Number of Terminations44
- ECCN Code3A991.B.2.B
- HTS Code8542.32.00.41
- SubcategorySRAMs
- TechnologyNVSRAM (Non-Volatile SRAM)
- Voltage - Supply2.7V~3.6V
- Terminal PositionDUAL
- Peak Reflow Temperature (Cel)260
- Number of Functions1
- Supply Voltage3V
- Terminal Pitch0.8mm
- Reflow Temperature-Max (s)30
- Base Part NumberCY14B108
- Pin Count44
- Operating Supply Voltage3V
- Supply Voltage-Max (Vsup)3.6V
- Supply Voltage-Min (Vsup)2.7V
- Memory Size8Mb 1M x 8
- Nominal Supply Current75mA
- Memory TypeNon-Volatile
- Logic FunctionClock
- Memory FormatNVSRAM
- Memory InterfaceParallel
- Data Bus Width8b
- Organization1MX8
- Memory Width8
- Write Cycle Time - Word, Page20ns
- Density8 Mb
- Standby Current-Max0.01A
- Access Time (Max)20 ns
- Word Size8b
- Time FormatHH:MM:SS
- Height Seated (Max)1.194mm
- Length18.415mm
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
CY14B108L-ZS20XI Overview
This product is packaged in a tray and falls under the ECCN Code 3A991.B.2.B. It has a dual terminal position and serves one function. The terminal pitch is 0.8mm and its logic function is a clock. The memory interface is parallel and it has an organization of 1MX8. The memory width is 8 and the overall length of the product is 18.415mm.
CY14B108L-ZS20XI Features
Package / Case: 44-TSOP (0.400, 10.16mm Width)
44 Pins
Operating Supply Voltage:3V
CY14B108L-ZS20XI Applications
There are a lot of Cypress Semiconductor Corp CY14B108L-ZS20XI Memory applications.
hard disk drive (HDD)
graphics card
personal computers
mainframes
DVD disk buffer
workstations,
cell phones
networking
telecommunications
eDRAM
This product is packaged in a tray and falls under the ECCN Code 3A991.B.2.B. It has a dual terminal position and serves one function. The terminal pitch is 0.8mm and its logic function is a clock. The memory interface is parallel and it has an organization of 1MX8. The memory width is 8 and the overall length of the product is 18.415mm.
CY14B108L-ZS20XI Features
Package / Case: 44-TSOP (0.400, 10.16mm Width)
44 Pins
Operating Supply Voltage:3V
CY14B108L-ZS20XI Applications
There are a lot of Cypress Semiconductor Corp CY14B108L-ZS20XI Memory applications.
hard disk drive (HDD)
graphics card
personal computers
mainframes
DVD disk buffer
workstations,
cell phones
networking
telecommunications
eDRAM
CY14B108L-ZS20XI More Descriptions
NVSRAM (Non-Volatile SRAM) Memory IC 8Mb (1M x 8) Parallel 20 ns 44-TSOP II
NVRAM NVSRAM Parallel 8Mbit 3V 44-Pin TSOP-II Tray
3A991.B.2.B Surface Mount CY14B108 Tray ic memory 20ns 18.415mm 75mA 8Mb
2.7V~3.6V 8Mbit TSOPII-44 SRAM ROHS
Nonvolatile SRAM, 8192 Kb Density, SOP-44, RoHSCypress Semiconductor SCT
NVRAM NVSRAM Parallel 8Mbit 3V 44-Pin TSOP-II Tray
3A991.B.2.B Surface Mount CY14B108 Tray ic memory 20ns 18.415mm 75mA 8Mb
2.7V~3.6V 8Mbit TSOPII-44 SRAM ROHS
Nonvolatile SRAM, 8192 Kb Density, SOP-44, RoHSCypress Semiconductor SCT
The three parts on the right have similar specifications to CY14B108L-ZS20XI.
-
ImagePart NumberManufacturerFactory Lead TimeContact PlatingMountMounting TypePackage / CaseNumber of PinsOperating TemperaturePackagingPublishedJESD-609 CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeHTS CodeSubcategoryTechnologyVoltage - SupplyTerminal PositionPeak Reflow Temperature (Cel)Number of FunctionsSupply VoltageTerminal PitchReflow Temperature-Max (s)Base Part NumberPin CountOperating Supply VoltageSupply Voltage-Max (Vsup)Supply Voltage-Min (Vsup)Memory SizeNominal Supply CurrentMemory TypeLogic FunctionMemory FormatMemory InterfaceData Bus WidthOrganizationMemory WidthWrite Cycle Time - Word, PageDensityStandby Current-MaxAccess Time (Max)Word SizeTime FormatHeight Seated (Max)LengthRadiation HardeningRoHS StatusSupplier Device PackageAccess TimeSurface MountReach Compliance CodeJESD-30 CodeQualification StatusOperating ModeMemory DensityWidthView Compare
-
CY14B108L-ZS20XI14 WeeksGoldSurface MountSurface Mount44-TSOP (0.400, 10.16mm Width)44-40°C~85°C TATray2007e4Active3 (168 Hours)443A991.B.2.B8542.32.00.41SRAMsNVSRAM (Non-Volatile SRAM)2.7V~3.6VDUAL26013V0.8mm30CY14B108443V3.6V2.7V8Mb 1M x 875mANon-VolatileClockNVSRAMParallel8b1MX8820ns8 Mb0.01A20 ns8bHH:MM:SS1.194mm18.415mmNoROHS3 Compliant----------
-
---Surface Mount48-BSSOP (0.295, 7.50mm Width)-0°C~70°C TATube--Obsolete3 (168 Hours)----NVSRAM (Non-Volatile SRAM)2.7V~3.6V-----------1Mb 128K x 8-Non-Volatile-NVSRAMParallel---45ns--------ROHS3 Compliant48-SSOP45ns-------
-
---Surface Mount44-TSOP (0.400, 10.16mm Width)--40°C~85°C TATube--Obsolete3 (168 Hours)44---NVSRAM (Non-Volatile SRAM)2.7V~3.6VDUAL-13V0.8mm--44-3.6V2.7V4Mb 512K x 8-Non-Volatile-NVSRAMParallel-512KX8845ns--45 ns--1.194mm18.415mm-ROHS3 Compliant--YESunknownR-PDSO-G44COMMERCIALASYNCHRONOUS4194304 bit10.16mm
-
---Surface Mount48-TFBGA-0°C~70°C TATube--Obsolete3 (168 Hours)----NVSRAM (Non-Volatile SRAM)2.7V~3.6V-----------4Mb 512K x 8-Non-Volatile-NVSRAMParallel---45ns--------Non-RoHS Compliant48-FBGA (6x10)45ns-------
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