Cypress Semiconductor Corp CY14B108L-BA25XI

Name: CY14B108L-BA25XI
Brand: Cypress Semiconductor Corp
SKU: 3236912-CY14B108L-BA25XI
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: CY14B108L-BA25XI

Manufacturer:: Cypress Semiconductor Corp

Ventron No:: 3236912-CY14B108L-BA25XI

Description:: IC NVSRAM 8MBIT 25NS 48FBGA

ECAD Model:

Datasheet:: CY14B108L-BA25XI

Specifications

Cypress Semiconductor Corp CY14B108L-BA25XI technical specifications, attributes, parameters and parts with similar specifications to Cypress Semiconductor Corp CY14B108L-BA25XI.

Factory Lead Time
16 Weeks
Contact Plating
Copper, Silver, Tin
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
48-TFBGA
Number of Pins
48
Operating Temperature
-40°C~85°C TA
Packaging
Tray
Published
2007
JESD-609 Code
e1
Part Status
Active
Moisture Sensitivity Level (MSL)
3 (168 Hours)
Number of Terminations
48
ECCN Code
3A991.B.2.A
Terminal Finish
Tin/Silver/Copper (Sn/Ag/Cu)
HTS Code
8542.32.00.41
Subcategory
SRAMs
Technology
NVSRAM (Non-Volatile SRAM)
Voltage - Supply
2.7V~3.6V
Terminal Position
BOTTOM
Peak Reflow Temperature (Cel)
260
Number of Functions
1
Supply Voltage
3V
Terminal Pitch
0.75mm
Reflow Temperature-Max (s)
30
Base Part Number
CY14B108
Pin Count
48
Operating Supply Voltage
3V
Supply Voltage-Max (Vsup)
3.6V
Supply Voltage-Min (Vsup)
2.7V
Memory Size
8Mb 1M x 8
Nominal Supply Current
75mA
Memory Type
Non-Volatile
Logic Function
Clock
Memory Format
NVSRAM
Memory Interface
Parallel
Data Bus Width
8b
Organization
1MX8
Memory Width
8
Write Cycle Time - Word, Page
25ns
Density
8 Mb
Standby Current-Max
0.01A
Access Time (Max)
25 ns
Word Size
8b
Time Format
HH:MM:SS
Height Seated (Max)
1.2mm
Length
10mm
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

CY14B108L-BA25XI Overview
The Peak Reflow Temperature (Cel) for this particular product is 260 degrees Celsius. It has a Pin Count of 48, making it suitable for a variety of applications. The Supply Voltage-Min (Vsup) is 2.7V, providing stable and reliable power to the device. This memory type is Non-Volatile, meaning it retains data even when power is turned off. With a Memory Width of 8, it can store a significant amount of data. The Write Cycle Time for both Word and Page is 25ns, ensuring fast and efficient data transfer. The Density of this memory is 8 Mb, making it ideal for storing large amounts of information. The Word Size is 8b, allowing for precise and accurate data retrieval. The Time Format for this product is HH:MM:SS, providing a standard and easily readable format. And finally, it is important to note that this product is ROHS3 Compliant, meeting the necessary environmental standards.

CY14B108L-BA25XI Features
Package / Case: 48-TFBGA
48 Pins
Operating Supply Voltage:3V

CY14B108L-BA25XI Applications
There are a lot of Cypress Semiconductor Corp CY14B108L-BA25XI Memory applications.

eDRAM
Cache memory
personal computers
personal digital assistants
servers
mainframes
telecommunications
networking
Camcorders
networks

CY14B108L-BA25XI More Descriptions

NVRAM NVSRAM Parallel 8Mbit 3V 48-Pin FBGA Tray
Nonvolatile SRAM, 8192 Kb Density, BGA-48, RoHSCypress Semiconductor SCT
2.7V~3.6V 8Mbit TFBGA-48 SRAM ROHS
IC NVSRAM 8MBIT PARALLEL 48FBGA
NVRAM 8Mb 3V 25ns 1024K x 8 nvSRAM

Product Comparison

The three parts on the right have similar specifications to CY14B108L-BA25XI.

Image

Part Number

Manufacturer

Factory Lead Time

Contact Plating

Mount

Mounting Type

Package / Case

Number of Pins

Operating Temperature

Packaging

Published

JESD-609 Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Terminal Finish

HTS Code

Subcategory

Technology

Voltage - Supply

Terminal Position

Peak Reflow Temperature (Cel)

Number of Functions

Supply Voltage

Terminal Pitch

Reflow Temperature-Max (s)

Base Part Number

Pin Count

Operating Supply Voltage

Supply Voltage-Max (Vsup)

Supply Voltage-Min (Vsup)

Memory Size

Nominal Supply Current

Memory Type

Logic Function

Memory Format

Memory Interface

Data Bus Width

Organization

Memory Width

Write Cycle Time - Word, Page

Density

Standby Current-Max

Access Time (Max)

Word Size

Time Format

Height Seated (Max)

Length

Radiation Hardening

RoHS Status

Lead Free

Reach Compliance Code

Time@Peak Reflow Temperature-Max (s)

Qualification Status

Operating Mode

Surface Mount

JESD-30 Code

Memory Density

Width

View Compare
CY14B108L-BA25XI

Cypress Semiconductor Corp

16 Weeks

Copper, Silver, Tin

Surface Mount

Surface Mount

48-TFBGA

48

-40°C~85°C TA

Tray

2007

e1

Active

3 (168 Hours)

48

3A991.B.2.A

Tin/Silver/Copper (Sn/Ag/Cu)

8542.32.00.41

SRAMs

NVSRAM (Non-Volatile SRAM)

2.7V~3.6V

BOTTOM

260

1

3V

0.75mm

30

CY14B108

48

3V

3.6V

2.7V

8Mb 1M x 8

75mA

Non-Volatile

Clock

NVSRAM

Parallel

8b

1MX8

8

25ns

8 Mb

0.01A

25 ns

8b

HH:MM:SS

1.2mm

10mm

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-
CY14B101L-SP35XI

Cypress Semiconductor Corp

-

-

Surface Mount

Surface Mount

48-BSSOP (0.295, 7.50mm Width)

48

-40°C~85°C TA

Tube

2009

e4

Obsolete

3 (168 Hours)

48

EAR99

Nickel/Palladium/Gold (Ni/Pd/Au)

8542.32.00.41

SRAMs

NVSRAM (Non-Volatile SRAM)

2.7V~3.6V

DUAL

260

1

3V

0.635mm

-

CY14B101

48

3.3V

3.6V

2.7V

1Mb 128K x 8

60mA

Non-Volatile

-

NVSRAM

Parallel

8b

128KX8

8

35ns

1 Mb

0.003A

35 ns

8b

-

2.794mm

15.875mm

-

ROHS3 Compliant

Lead Free

unknown

20

Not Qualified

ASYNCHRONOUS

-

-

-

-

CY14B108L-BA25XI vs CY14B101L-SP35XI
CY14B116N-BA25XI

Cypress Semiconductor Corp

26 Weeks

-

-

Surface Mount

60-LFBGA

-

-40°C~85°C TA

Tray

-

-

Active

3 (168 Hours)

60

3A991.A.2

-

8542.90.00.00

-

NVSRAM (Non-Volatile SRAM)

2.7V~3.6V

BOTTOM

NOT SPECIFIED

1

3V

0.75mm

-

-

-

-

3.6V

2.7V

16Mb 1M x 16

-

Non-Volatile

-

NVSRAM

Parallel

-

1MX16

16

25ns

-

-

25 ns

-

-

1.2mm

18mm

-

ROHS3 Compliant

-

-

NOT SPECIFIED

-

ASYNCHRONOUS

YES

R-PBGA-B60

16777216 bit

10mm

CY14B108L-BA25XI vs CY14B116N-BA25XI
CY14B116N-BA25XIT

Cypress Semiconductor Corp

26 Weeks

-

-

Surface Mount

60-LFBGA

-

-40°C~85°C TA

Tape & Reel (TR)

-

-

Active

3 (168 Hours)

60

3A991.A.2

-

8542.90.00.00

-

NVSRAM (Non-Volatile SRAM)

2.7V~3.6V

BOTTOM

NOT SPECIFIED

1

3V

0.75mm

-

-

-

-

3.6V

2.7V

16Mb 1M x 16

-

Non-Volatile

-

NVSRAM

Parallel

-

1MX16

16

25ns

-

-

25 ns

-

-

1.2mm

18mm

-

ROHS3 Compliant

-

-

NOT SPECIFIED

-

ASYNCHRONOUS

YES

R-PBGA-B60

16777216 bit

10mm

CY14B108L-BA25XI vs CY14B116N-BA25XIT