Cypress Semiconductor Corp CY14B104LA-BA45XI
- Part Number:
- CY14B104LA-BA45XI
- Manufacturer:
- Cypress Semiconductor Corp
- Ventron No:
- 3721397-CY14B104LA-BA45XI
- Description:
- IC NVSRAM 4MBIT 45NS 48FBGA
- Datasheet:
- CY14B104LA-BA45XI
Cypress Semiconductor Corp CY14B104LA-BA45XI technical specifications, attributes, parameters and parts with similar specifications to Cypress Semiconductor Corp CY14B104LA-BA45XI.
- Factory Lead Time16 Weeks
- Contact PlatingCopper, Silver, Tin
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / Case48-TFBGA
- Number of Pins48
- Operating Temperature-40°C~85°C TA
- PackagingTray
- Published2011
- JESD-609 Codee1
- Part StatusActive
- Moisture Sensitivity Level (MSL)3 (168 Hours)
- Number of Terminations48
- ECCN Code3A991.B.2.A
- Terminal FinishTin/Silver/Copper (Sn/Ag/Cu)
- HTS Code8542.32.00.41
- SubcategorySRAMs
- TechnologyNVSRAM (Non-Volatile SRAM)
- Voltage - Supply2.7V~3.6V
- Terminal PositionBOTTOM
- Peak Reflow Temperature (Cel)260
- Number of Functions1
- Supply Voltage3V
- Terminal Pitch0.75mm
- Reflow Temperature-Max (s)30
- Base Part NumberCY14B104
- Pin Count48
- Operating Supply Voltage3V
- Supply Voltage-Max (Vsup)3.6V
- Supply Voltage-Min (Vsup)2.7V
- Memory Size4Mb 512K x 8
- Nominal Supply Current52mA
- Memory TypeNon-Volatile
- Memory FormatNVSRAM
- Memory InterfaceParallel
- Data Bus Width8b
- Organization512KX8
- Memory Width8
- Write Cycle Time - Word, Page45ns
- Density4 Mb
- Standby Current-Max0.005A
- Access Time (Max)45 ns
- Word Size8b
- Height Seated (Max)1.2mm
- Length10mm
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
CY14B104LA-BA45XI Overview
The contact plating for this product is available in three options: copper, silver, and tin. It has a total of 48 terminations, with the terminal position located at the bottom. The product has 1 function and a terminal pitch of 0.75mm. The maximum reflow temperature is 30 seconds. With a pin count of 48, the operating supply voltage is 3V. The density of the product is 4 Mb and the word size is 8b.
CY14B104LA-BA45XI Features
Package / Case: 48-TFBGA
48 Pins
Operating Supply Voltage:3V
CY14B104LA-BA45XI Applications
There are a lot of Cypress Semiconductor Corp CY14B104LA-BA45XI Memory applications.
eDRAM
hard disk drive (HDD)
personal computers
printers
telecommunications
networks
mainframes
networking
embedded logic
nonvolatile BIOS memory
The contact plating for this product is available in three options: copper, silver, and tin. It has a total of 48 terminations, with the terminal position located at the bottom. The product has 1 function and a terminal pitch of 0.75mm. The maximum reflow temperature is 30 seconds. With a pin count of 48, the operating supply voltage is 3V. The density of the product is 4 Mb and the word size is 8b.
CY14B104LA-BA45XI Features
Package / Case: 48-TFBGA
48 Pins
Operating Supply Voltage:3V
CY14B104LA-BA45XI Applications
There are a lot of Cypress Semiconductor Corp CY14B104LA-BA45XI Memory applications.
eDRAM
hard disk drive (HDD)
personal computers
printers
telecommunications
networks
mainframes
networking
embedded logic
nonvolatile BIOS memory
CY14B104LA-BA45XI More Descriptions
4MBIT (512 K × 8/256 K × 16) nvSRAM 3V 45NS 48 Ball FBGA industrial temp
Non Volatile Srams/Tray |Cypress Infineon Technologies CY14B104LA-BA45XI
NVRAM NVSRAM Parallel 4M-Bit 3V 48-Pin FBGA Tray
2.7V~3.6V 4Mbit TFBGA-48 SRAM ROHS
IC NVSRAM 4MBIT PARALLEL 48FBGA
NVRAM 4Mb 3V 45ns 512K x 8 nvSRAM
Non Volatile Srams/Tray |Cypress Infineon Technologies CY14B104LA-BA45XI
NVRAM NVSRAM Parallel 4M-Bit 3V 48-Pin FBGA Tray
2.7V~3.6V 4Mbit TFBGA-48 SRAM ROHS
IC NVSRAM 4MBIT PARALLEL 48FBGA
NVRAM 4Mb 3V 45ns 512K x 8 nvSRAM
The three parts on the right have similar specifications to CY14B104LA-BA45XI.
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ImagePart NumberManufacturerFactory Lead TimeContact PlatingMountMounting TypePackage / CaseNumber of PinsOperating TemperaturePackagingPublishedJESD-609 CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishHTS CodeSubcategoryTechnologyVoltage - SupplyTerminal PositionPeak Reflow Temperature (Cel)Number of FunctionsSupply VoltageTerminal PitchReflow Temperature-Max (s)Base Part NumberPin CountOperating Supply VoltageSupply Voltage-Max (Vsup)Supply Voltage-Min (Vsup)Memory SizeNominal Supply CurrentMemory TypeMemory FormatMemory InterfaceData Bus WidthOrganizationMemory WidthWrite Cycle Time - Word, PageDensityStandby Current-MaxAccess Time (Max)Word SizeHeight Seated (Max)LengthRadiation HardeningRoHS StatusSupplier Device PackageAccess TimeSurface MountPbfree CodeReach Compliance CodeTime@Peak Reflow Temperature-Max (s)JESD-30 CodeQualification StatusOperating ModeMemory DensityWidthView Compare
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CY14B104LA-BA45XI16 WeeksCopper, Silver, TinSurface MountSurface Mount48-TFBGA48-40°C~85°C TATray2011e1Active3 (168 Hours)483A991.B.2.ATin/Silver/Copper (Sn/Ag/Cu)8542.32.00.41SRAMsNVSRAM (Non-Volatile SRAM)2.7V~3.6VBOTTOM26013V0.75mm30CY14B104483V3.6V2.7V4Mb 512K x 852mANon-VolatileNVSRAMParallel8b512KX8845ns4 Mb0.005A45 ns8b1.2mm10mmNoROHS3 Compliant------------
-
---Surface Mount48-BSSOP (0.295, 7.50mm Width)-0°C~70°C TATube--Obsolete3 (168 Hours)-----NVSRAM (Non-Volatile SRAM)2.7V~3.6V-----------1Mb 128K x 8-Non-VolatileNVSRAMParallel---45ns-------ROHS3 Compliant48-SSOP45ns---------
-
---Surface Mount44-TSOP (0.400, 10.16mm Width)--40°C~85°C TATube-e4Obsolete3 (168 Hours)44-NICKEL PALLADIUM GOLD--NVSRAM (Non-Volatile SRAM)2.7V~3.6VDUAL26013V0.8mm--44-3.6V2.7V4Mb 512K x 8-Non-VolatileNVSRAMParallel-512KX8825ns--25 ns-1.194mm18.415mm-ROHS3 Compliant--YESyesunknownNOT SPECIFIEDR-PDSO-G44COMMERCIALASYNCHRONOUS4194304 bit10.16mm
-
---Surface Mount48-TFBGA-0°C~70°C TATube--Obsolete3 (168 Hours)-----NVSRAM (Non-Volatile SRAM)2.7V~3.6V-----------4Mb 512K x 8-Non-VolatileNVSRAMParallel---45ns-------Non-RoHS Compliant48-FBGA (6x10)45ns---------
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