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CY14B101LA-BA45XI

Cypress Semiconductor Corp CY14B101LA-BA45XI

Part Number:
CY14B101LA-BA45XI
Manufacturer:
Cypress Semiconductor Corp
Ventron No:
3230638-CY14B101LA-BA45XI
Description:
IC NVSRAM 1MBIT 45NS 48FBGA
ECAD Model:
Datasheet:
CY14B101LA-BA45XI

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Specifications
Cypress Semiconductor Corp CY14B101LA-BA45XI technical specifications, attributes, parameters and parts with similar specifications to Cypress Semiconductor Corp CY14B101LA-BA45XI.
  • Factory Lead Time
    13 Weeks
  • Contact Plating
    Copper, Silver, Tin
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    48-TFBGA
  • Number of Pins
    48
  • Operating Temperature
    -40°C~85°C TA
  • Packaging
    Tray
  • Published
    2009
  • JESD-609 Code
    e1
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    3 (168 Hours)
  • Number of Terminations
    48
  • ECCN Code
    EAR99
  • Terminal Finish
    Tin/Silver/Copper (Sn/Ag/Cu)
  • HTS Code
    8542.32.00.41
  • Subcategory
    SRAMs
  • Technology
    NVSRAM (Non-Volatile SRAM)
  • Voltage - Supply
    2.7V~3.6V
  • Terminal Position
    BOTTOM
  • Peak Reflow Temperature (Cel)
    260
  • Number of Functions
    1
  • Supply Voltage
    3V
  • Terminal Pitch
    0.75mm
  • Reflow Temperature-Max (s)
    30
  • Base Part Number
    CY14B101
  • Pin Count
    48
  • Operating Supply Voltage
    3V
  • Supply Voltage-Max (Vsup)
    3.6V
  • Supply Voltage-Min (Vsup)
    2.7V
  • Memory Size
    1Mb 128K x 8
  • Nominal Supply Current
    52mA
  • Memory Type
    Non-Volatile
  • Memory Format
    NVSRAM
  • Memory Interface
    Parallel
  • Data Bus Width
    8b
  • Organization
    128KX8
  • Memory Width
    8
  • Write Cycle Time - Word, Page
    45ns
  • Density
    1 Mb
  • Standby Current-Max
    0.005A
  • Access Time (Max)
    45 ns
  • Word Size
    8b
  • Height Seated (Max)
    1.2mm
  • Length
    10mm
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
Description
CY14B101LA-BA45XI Overview
The Surface Mount technology has been widely adopted in the electronics industry since its introduction in 1960s. One such example is the 48-pin NVSRAM, which was first published in 2009. This particular device has an ECCN Code of EAR99, making it eligible for export without a license. It operates at a supply voltage range of 2.7V to 3.6V, with a minimum supply voltage of 2.7V. The maximum reflow temperature for this device is 30 seconds. With a memory size of 1Mb, equivalent to 128K x 8, this NVSRAM is suitable for a wide range of applications. Its compact size and surface mount design make it a popular choice among manufacturers.

CY14B101LA-BA45XI Features
Package / Case: 48-TFBGA
48 Pins
Operating Supply Voltage:3V

CY14B101LA-BA45XI Applications
There are a lot of Cypress Semiconductor Corp CY14B101LA-BA45XI Memory applications.

data buffer
Cache memory
eDRAM
networking
workstations,
eSRAM
supercomputers
personal digital assistants
DVD disk buffer
telecommunications
CY14B101LA-BA45XI More Descriptions
Non Volatile Srams/Tray |Cypress Infineon Technologies CY14B101LA-BA45XI
NVRAM NVSRAM Parallel 1M-Bit 3V 48-Pin FBGA Tray
IC NVSRAM 1MBIT PARALLEL 48FBGA
NVRAM 1Mb 3V 45ns 128K x 8 nvSRAM
NON-VOLATILE SRAM, 128KX8, 45NS
Product Comparison
The three parts on the right have similar specifications to CY14B101LA-BA45XI.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Contact Plating
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Operating Temperature
    Packaging
    Published
    JESD-609 Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Terminal Finish
    HTS Code
    Subcategory
    Technology
    Voltage - Supply
    Terminal Position
    Peak Reflow Temperature (Cel)
    Number of Functions
    Supply Voltage
    Terminal Pitch
    Reflow Temperature-Max (s)
    Base Part Number
    Pin Count
    Operating Supply Voltage
    Supply Voltage-Max (Vsup)
    Supply Voltage-Min (Vsup)
    Memory Size
    Nominal Supply Current
    Memory Type
    Memory Format
    Memory Interface
    Data Bus Width
    Organization
    Memory Width
    Write Cycle Time - Word, Page
    Density
    Standby Current-Max
    Access Time (Max)
    Word Size
    Height Seated (Max)
    Length
    Radiation Hardening
    RoHS Status
    Surface Mount
    Time@Peak Reflow Temperature-Max (s)
    JESD-30 Code
    Operating Mode
    Memory Density
    Width
    Qualification Status
    Power Supplies
    Supply Current-Max
    View Compare
  • CY14B101LA-BA45XI
    CY14B101LA-BA45XI
    Cypress Semiconductor Corp
    13 Weeks
    Copper, Silver, Tin
    Surface Mount
    Surface Mount
    48-TFBGA
    48
    -40°C~85°C TA
    Tray
    2009
    e1
    Active
    3 (168 Hours)
    48
    EAR99
    Tin/Silver/Copper (Sn/Ag/Cu)
    8542.32.00.41
    SRAMs
    NVSRAM (Non-Volatile SRAM)
    2.7V~3.6V
    BOTTOM
    260
    1
    3V
    0.75mm
    30
    CY14B101
    48
    3V
    3.6V
    2.7V
    1Mb 128K x 8
    52mA
    Non-Volatile
    NVSRAM
    Parallel
    8b
    128KX8
    8
    45ns
    1 Mb
    0.005A
    45 ns
    8b
    1.2mm
    10mm
    No
    ROHS3 Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • CY14B116N-BA25XI
    CY14B116N-BA25XI
    Cypress Semiconductor Corp
    26 Weeks
    -
    -
    Surface Mount
    60-LFBGA
    -
    -40°C~85°C TA
    Tray
    -
    -
    Active
    3 (168 Hours)
    60
    3A991.A.2
    -
    8542.90.00.00
    -
    NVSRAM (Non-Volatile SRAM)
    2.7V~3.6V
    BOTTOM
    NOT SPECIFIED
    1
    3V
    0.75mm
    -
    -
    -
    -
    3.6V
    2.7V
    16Mb 1M x 16
    -
    Non-Volatile
    NVSRAM
    Parallel
    -
    1MX16
    16
    25ns
    -
    -
    25 ns
    -
    1.2mm
    18mm
    -
    ROHS3 Compliant
    YES
    NOT SPECIFIED
    R-PBGA-B60
    ASYNCHRONOUS
    16777216 bit
    10mm
    -
    -
    -
    CY14B101LA-BA45XI vs CY14B116N-BA25XI
  • CY14B116N-BA25XIT
    CY14B116N-BA25XIT
    Cypress Semiconductor Corp
    26 Weeks
    -
    -
    Surface Mount
    60-LFBGA
    -
    -40°C~85°C TA
    Tape & Reel (TR)
    -
    -
    Active
    3 (168 Hours)
    60
    3A991.A.2
    -
    8542.90.00.00
    -
    NVSRAM (Non-Volatile SRAM)
    2.7V~3.6V
    BOTTOM
    NOT SPECIFIED
    1
    3V
    0.75mm
    -
    -
    -
    -
    3.6V
    2.7V
    16Mb 1M x 16
    -
    Non-Volatile
    NVSRAM
    Parallel
    -
    1MX16
    16
    25ns
    -
    -
    25 ns
    -
    1.2mm
    18mm
    -
    ROHS3 Compliant
    YES
    NOT SPECIFIED
    R-PBGA-B60
    ASYNCHRONOUS
    16777216 bit
    10mm
    -
    -
    -
    CY14B101LA-BA45XI vs CY14B116N-BA25XIT
  • CY14B104NA-BA25IT
    CY14B104NA-BA25IT
    Cypress Semiconductor Corp
    11 Weeks
    -
    -
    Surface Mount
    48-TFBGA
    -
    -40°C~85°C TA
    Tape & Reel (TR)
    2011
    e1
    Last Time Buy
    3 (168 Hours)
    48
    3A991.B.2.A
    Tin/Silver/Copper (Sn/Ag/Cu)
    8542.32.00.41
    SRAMs
    NVSRAM (Non-Volatile SRAM)
    2.7V~3.6V
    BOTTOM
    260
    1
    3V
    0.75mm
    -
    CY14B104
    -
    -
    3.6V
    2.7V
    4Mb 256K x 16
    -
    Non-Volatile
    NVSRAM
    Parallel
    -
    256KX16
    16
    25ns
    -
    0.005A
    25 ns
    -
    1.2mm
    10mm
    -
    Non-RoHS Compliant
    YES
    30
    R-PBGA-B48
    ASYNCHRONOUS
    4194304 bit
    6mm
    Not Qualified
    3/3.3V
    0.07mA
    CY14B101LA-BA45XI vs CY14B104NA-BA25IT
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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