BUV26G

ON Semiconductor BUV26G

Part Number:
BUV26G
Manufacturer:
ON Semiconductor
Ventron No:
2465555-BUV26G
Description:
TRANS NPN 90V 20A TO220AB
ECAD Model:
Datasheet:
BUV26G

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Specifications
ON Semiconductor BUV26G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor BUV26G.
  • Lifecycle Status
    LAST SHIPMENTS (Last Updated: 3 days ago)
  • Factory Lead Time
    2 Weeks
  • Contact Plating
    Tin
  • Mounting Type
    Through Hole
  • Package / Case
    TO-220-3
  • Surface Mount
    NO
  • Number of Pins
    3
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -65°C~175°C TJ
  • Packaging
    Tube
  • Published
    2002
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • ECCN Code
    EAR99
  • Subcategory
    Other Transistors
  • Voltage - Rated DC
    90V
  • Max Power Dissipation
    85W
  • Peak Reflow Temperature (Cel)
    260
  • Current Rating
    20A
  • Time@Peak Reflow Temperature-Max (s)
    40
  • Base Part Number
    BUV26
  • Pin Count
    3
  • Number of Elements
    1
  • Element Configuration
    Single
  • Power Dissipation
    85W
  • Case Connection
    COLLECTOR
  • Transistor Application
    SWITCHING
  • Polarity/Channel Type
    NPN
  • Transistor Type
    NPN
  • Collector Emitter Voltage (VCEO)
    90V
  • Max Collector Current
    20A
  • JEDEC-95 Code
    TO-220AB
  • Vce Saturation (Max) @ Ib, Ic
    1.5V @ 1.2A, 12A
  • Collector Emitter Breakdown Voltage
    50V
  • Transition Frequency
    330MHz
  • Collector Emitter Saturation Voltage
    1.5V
  • Max Breakdown Voltage
    90V
  • Collector Base Voltage (VCBO)
    180V
  • Emitter Base Voltage (VEBO)
    7V
  • Height
    15.75mm
  • Length
    10.28mm
  • Width
    4.82mm
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    RoHS Compliant
  • Lead Free
    Lead Free
Description
BUV26G Overview
A collector emitter saturation voltage of 1.5V ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 1.5V @ 1.2A, 12A.Keeping the emitter base voltage at 7V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (20A).330MHz is present in the transition frequency.An input voltage of 90V volts is the breakdown voltage.Maximum collector currents can be below 20A volts.

BUV26G Features
a collector emitter saturation voltage of 1.5V
the vce saturation(Max) is 1.5V @ 1.2A, 12A
the emitter base voltage is kept at 7V
the current rating of this device is 20A
a transition frequency of 330MHz


BUV26G Applications
There are a lot of ON Semiconductor
BUV26G applications of single BJT transistors.


Inverter
Interface
Driver
Muting
BUV26G More Descriptions
ON Semi BUV26G NPN Bipolar Transistor, 20 A, 90 V, 3-Pin TO-220 | ON Semiconductor BUV26G
Trans GP BJT NPN 90V 20A 85000mW 3-Pin(3 Tab) TO-220AB Tube
Power Bipolar Transistor, 20A I(C), 90V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
BUV Series 90 V 20 A SWITCHMODE™ NPN Silicon Power Transistor - TO-220
TRANSISTOR, NPN, 90V, 20A, TO-220-3
TRANSISTOR, NPN, 90V, 20A, TO-220-3; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 90V; Transition Frequency ft: -; Power Dissipation Pd: 85W; DC Collector Current: 20A; DC Current Gain hFE: -; Transistor Case Style: TO-220; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (15-Jan-2018); Operating Temperature Min: -65°C
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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