ON Semiconductor BUV26G
- Part Number:
- BUV26G
- Manufacturer:
- ON Semiconductor
- Ventron No:
- 2465555-BUV26G
- Description:
- TRANS NPN 90V 20A TO220AB
- Datasheet:
- BUV26G
ON Semiconductor BUV26G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor BUV26G.
- Lifecycle StatusLAST SHIPMENTS (Last Updated: 3 days ago)
- Factory Lead Time2 Weeks
- Contact PlatingTin
- Mounting TypeThrough Hole
- Package / CaseTO-220-3
- Surface MountNO
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature-65°C~175°C TJ
- PackagingTube
- Published2002
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- SubcategoryOther Transistors
- Voltage - Rated DC90V
- Max Power Dissipation85W
- Peak Reflow Temperature (Cel)260
- Current Rating20A
- Time@Peak Reflow Temperature-Max (s)40
- Base Part NumberBUV26
- Pin Count3
- Number of Elements1
- Element ConfigurationSingle
- Power Dissipation85W
- Case ConnectionCOLLECTOR
- Transistor ApplicationSWITCHING
- Polarity/Channel TypeNPN
- Transistor TypeNPN
- Collector Emitter Voltage (VCEO)90V
- Max Collector Current20A
- JEDEC-95 CodeTO-220AB
- Vce Saturation (Max) @ Ib, Ic1.5V @ 1.2A, 12A
- Collector Emitter Breakdown Voltage50V
- Transition Frequency330MHz
- Collector Emitter Saturation Voltage1.5V
- Max Breakdown Voltage90V
- Collector Base Voltage (VCBO)180V
- Emitter Base Voltage (VEBO)7V
- Height15.75mm
- Length10.28mm
- Width4.82mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusRoHS Compliant
- Lead FreeLead Free
BUV26G Overview
A collector emitter saturation voltage of 1.5V ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 1.5V @ 1.2A, 12A.Keeping the emitter base voltage at 7V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (20A).330MHz is present in the transition frequency.An input voltage of 90V volts is the breakdown voltage.Maximum collector currents can be below 20A volts.
BUV26G Features
a collector emitter saturation voltage of 1.5V
the vce saturation(Max) is 1.5V @ 1.2A, 12A
the emitter base voltage is kept at 7V
the current rating of this device is 20A
a transition frequency of 330MHz
BUV26G Applications
There are a lot of ON Semiconductor
BUV26G applications of single BJT transistors.
Inverter
Interface
Driver
Muting
A collector emitter saturation voltage of 1.5V ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 1.5V @ 1.2A, 12A.Keeping the emitter base voltage at 7V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (20A).330MHz is present in the transition frequency.An input voltage of 90V volts is the breakdown voltage.Maximum collector currents can be below 20A volts.
BUV26G Features
a collector emitter saturation voltage of 1.5V
the vce saturation(Max) is 1.5V @ 1.2A, 12A
the emitter base voltage is kept at 7V
the current rating of this device is 20A
a transition frequency of 330MHz
BUV26G Applications
There are a lot of ON Semiconductor
BUV26G applications of single BJT transistors.
Inverter
Interface
Driver
Muting
BUV26G More Descriptions
ON Semi BUV26G NPN Bipolar Transistor, 20 A, 90 V, 3-Pin TO-220 | ON Semiconductor BUV26G
Trans GP BJT NPN 90V 20A 85000mW 3-Pin(3 Tab) TO-220AB Tube
Power Bipolar Transistor, 20A I(C), 90V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
BUV Series 90 V 20 A SWITCHMODE NPN Silicon Power Transistor - TO-220
TRANSISTOR, NPN, 90V, 20A, TO-220-3
TRANSISTOR, NPN, 90V, 20A, TO-220-3; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 90V; Transition Frequency ft: -; Power Dissipation Pd: 85W; DC Collector Current: 20A; DC Current Gain hFE: -; Transistor Case Style: TO-220; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (15-Jan-2018); Operating Temperature Min: -65°C
Trans GP BJT NPN 90V 20A 85000mW 3-Pin(3 Tab) TO-220AB Tube
Power Bipolar Transistor, 20A I(C), 90V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
BUV Series 90 V 20 A SWITCHMODE NPN Silicon Power Transistor - TO-220
TRANSISTOR, NPN, 90V, 20A, TO-220-3
TRANSISTOR, NPN, 90V, 20A, TO-220-3; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 90V; Transition Frequency ft: -; Power Dissipation Pd: 85W; DC Collector Current: 20A; DC Current Gain hFE: -; Transistor Case Style: TO-220; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (15-Jan-2018); Operating Temperature Min: -65°C
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