STMicroelectronics BUL741
- Part Number:
- BUL741
- Manufacturer:
- STMicroelectronics
- Ventron No:
- 2463748-BUL741
- Description:
- TRANS NPN 400V 2.5A TO-220
- Datasheet:
- BUL741
STMicroelectronics BUL741 technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics BUL741.
- Lifecycle StatusACTIVE (Last Updated: 8 months ago)
- Factory Lead Time8 Weeks
- Contact PlatingTin
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-220-3
- Transistor Element MaterialSILICON
- Operating Temperature150°C TJ
- PackagingTube
- JESD-609 Codee3
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- SubcategoryOther Transistors
- Max Power Dissipation60W
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Reach Compliance Codenot_compliant
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- Base Part NumberBUL741
- Pin Count3
- JESD-30 CodeR-PSFM-T3
- Qualification StatusNot Qualified
- Number of Elements1
- Element ConfigurationSingle
- Power - Max60W
- Transistor ApplicationSWITCHING
- Polarity/Channel TypeNPN
- Transistor TypeNPN
- Collector Emitter Voltage (VCEO)400V
- Max Collector Current2.5A
- DC Current Gain (hFE) (Min) @ Ic, Vce25 @ 450mA 3V
- Current - Collector Cutoff (Max)250μA
- JEDEC-95 CodeTO-220AB
- Vce Saturation (Max) @ Ib, Ic1.5V @ 600mA, 2A
- Collector Emitter Breakdown Voltage400V
- Emitter Base Voltage (VEBO)15V
- hFE Min48
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
BUL741 Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 25 @ 450mA 3V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 1.5V @ 600mA, 2A.The emitter base voltage can be kept at 15V for high efficiency.Single BJT transistor is possible to have a collector current as low as 2.5A volts at Single BJT transistors maximum.
BUL741 Features
the DC current gain for this device is 25 @ 450mA 3V
the vce saturation(Max) is 1.5V @ 600mA, 2A
the emitter base voltage is kept at 15V
BUL741 Applications
There are a lot of STMicroelectronics
BUL741 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 25 @ 450mA 3V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 1.5V @ 600mA, 2A.The emitter base voltage can be kept at 15V for high efficiency.Single BJT transistor is possible to have a collector current as low as 2.5A volts at Single BJT transistors maximum.
BUL741 Features
the DC current gain for this device is 25 @ 450mA 3V
the vce saturation(Max) is 1.5V @ 600mA, 2A
the emitter base voltage is kept at 15V
BUL741 Applications
There are a lot of STMicroelectronics
BUL741 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
BUL741 More Descriptions
BUL741 Series NPN 400 V 2.5 A Fast-Switching Power Transistor - TO-220
Trans GP BJT NPN 400V 2.5A 3-Pin(3 Tab) TO-220 Tube
Power Bipolar Transistor, 2.5A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
High voltage fast-switching NPN power transistor
Power Bipolar, NPN, null, -mA, TO-220, TubeSTMicroelectronics SCT
Trans GP BJT NPN 400V 2.5A 3-Pin(3 Tab) TO-220 Tube
Power Bipolar Transistor, 2.5A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
High voltage fast-switching NPN power transistor
Power Bipolar, NPN, null, -mA, TO-220, TubeSTMicroelectronics SCT
The three parts on the right have similar specifications to BUL741.
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ImagePart NumberManufacturerLifecycle StatusFactory Lead TimeContact PlatingMountMounting TypePackage / CaseTransistor Element MaterialOperating TemperaturePackagingJESD-609 CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeSubcategoryMax Power DissipationPeak Reflow Temperature (Cel)Reach Compliance CodeTime@Peak Reflow Temperature-Max (s)Base Part NumberPin CountJESD-30 CodeQualification StatusNumber of ElementsElement ConfigurationPower - MaxTransistor ApplicationPolarity/Channel TypeTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)JEDEC-95 CodeVce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageEmitter Base Voltage (VEBO)hFE MinRoHS StatusLead FreeNumber of PinsTerminal FinishTerminal PositionConfigurationCase ConnectionVoltage - Rated DCCurrent RatingPower DissipationCollector Base Voltage (VCBO)REACH SVHCCollector Emitter Saturation VoltageView Compare
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BUL741ACTIVE (Last Updated: 8 months ago)8 WeeksTinThrough HoleThrough HoleTO-220-3SILICON150°C TJTubee3Active1 (Unlimited)3EAR99Other Transistors60WNOT SPECIFIEDnot_compliantNOT SPECIFIEDBUL7413R-PSFM-T3Not Qualified1Single60WSWITCHINGNPNNPN400V2.5A25 @ 450mA 3V250μATO-220AB1.5V @ 600mA, 2A400V15V48ROHS3 CompliantLead Free------------
-
---Through HoleThrough HoleTO-220-3 Full PackSILICON150°C TJTubee3Obsolete1 (Unlimited)3-Other Transistors30WNOT SPECIFIEDnot_compliantNOT SPECIFIEDBUL7413-Not Qualified1-30WSWITCHINGNPNNPN1.5V2.5A25 @ 450mA 3V250μATO-220AB1.5V @ 600mA, 2A400V--ROHS3 Compliant-3Matte Tin (Sn) - annealedSINGLESINGLEISOLATED------
-
---Through HoleThrough HoleTO-220-3SILICON150°C TJTubee3Obsolete1 (Unlimited)3EAR99Other Transistors70WNOT SPECIFIEDnot_compliantNOT SPECIFIEDBUL7043-Not Qualified1Single-SWITCHINGNPNNPN800mV4A14 @ 2A 5V250μATO-220AB800mV @ 500mA, 2.5A400V10V10ROHS3 CompliantLead Free3Tin (Sn)---400V4A70W700VNo SVHC-
-
ACTIVE (Last Updated: 7 months ago)8 WeeksTinThrough HoleThrough HoleTO-220-3SILICON150°C TJTube-Active1 (Unlimited)3EAR99Other Transistors100WNOT SPECIFIED-NOT SPECIFIEDBUL7433R-PSFM-T3Not Qualified1Single-SWITCHINGNPNNPN500V12A24 @ 2A 3V250μATO-220AB1.5V @ 2.5A, 10A500V15V24ROHS3 Compliant--------100W--150mV
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