Nexperia USA Inc. BUK9225-55A,118

Name: BUK9225-55A,118
Brand: Nexperia USA Inc.
SKU: 2478589-BUK9225-55A,118
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: BUK9225-55A,118

Manufacturer:: Nexperia USA Inc.

Ventron No:: 2478589-BUK9225-55A,118

Description:: MOSFET N-CH 55V 43A DPAK

ECAD Model:

Datasheet:: BUK9225-55A,118

Specifications

Nexperia USA Inc. BUK9225-55A,118 technical specifications, attributes, parameters and parts with similar specifications to Nexperia USA Inc. BUK9225-55A,118.

Factory Lead Time
26 Weeks
Contact Plating
Tin
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads Tab), SC-63
Surface Mount
YES
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-55°C~175°C TJ
Packaging
Tape & Reel (TR)
Series
Automotive, AEC-Q101, TrenchMOS™
Published
2010
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
ECCN Code
EAR99
HTS Code
8541.29.00.75
Technology
MOSFET (Metal Oxide)
Terminal Form
GULL WING
Pin Count
3
JESD-30 Code
R-PSSO-G2
Number of Elements
1
Power Dissipation-Max
94W Tc
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
94W
Case Connection
DRAIN
Turn On Delay Time
17 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
22m Ω @ 25A, 10V
Vgs(th) (Max) @ Id
2V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds
1724pF @ 25V
Current - Continuous Drain (Id) @ 25°C
43A Tc
Rise Time
104ns
Drive Voltage (Max Rds On,Min Rds On)
4.5V 10V
Vgs (Max)
±15V
Fall Time (Typ)
80 ns
Turn-Off Delay Time
82 ns
Continuous Drain Current (ID)
43A
Gate to Source Voltage (Vgs)
15V
Max Dual Supply Voltage
55V
Drain-source On Resistance-Max
0.027Ohm
Drain to Source Breakdown Voltage
55V
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

BUK9225-55A,118 Overview
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 1724pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 55V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 55V.As a result of its turn-off delay time, which is 82 ns, the device has taken time to charge its input capacitance before drain current conduction begins.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 17 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 15VV.The maximum dual supply voltage can be supported by 55V.In addition to reducing power consumption, this device uses drive voltage (4.5V 10V).

BUK9225-55A,118 Features
a continuous drain current (ID) of 43A
a drain-to-source breakdown voltage of 55V voltage
the turn-off delay time is 82 ns

BUK9225-55A,118 Applications
There are a lot of Nexperia USA Inc.
BUK9225-55A,118 applications of single MOSFETs transistors.

DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.

BUK9225-55A,118 More Descriptions

Trans MOSFET N-CH 55V 43A Automotive 3-Pin(2 Tab) DPAK T/R
N-channel TrenchMOS logic level FET
STANDARD MARKING * REEL PACK, SMD, 13'
BUK9225-55A - N-CHANNEL TRENCHMO

Product Comparison

The three parts on the right have similar specifications to BUK9225-55A,118.

Image

Part Number

Manufacturer

Factory Lead Time

Contact Plating

Mounting Type

Package / Case

Surface Mount

Number of Pins

Transistor Element Material

Operating Temperature

Packaging

Series

Published

JESD-609 Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

HTS Code

Technology

Terminal Form

Pin Count

JESD-30 Code

Number of Elements

Power Dissipation-Max

Element Configuration

Operating Mode

Power Dissipation

Case Connection

Turn On Delay Time

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Rise Time

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Gate to Source Voltage (Vgs)

Max Dual Supply Voltage

Drain-source On Resistance-Max

Drain to Source Breakdown Voltage

Radiation Hardening

RoHS Status

Lead Free

Number of Terminals

Terminal Finish

Additional Feature

Terminal Position

Peak Reflow Temperature (Cel)

Reach Compliance Code

Time@Peak Reflow Temperature-Max (s)

Qualification Status

Operating Temperature (Max)

Configuration

Polarity/Channel Type

Drain Current-Max (Abs) (ID)

Pulsed Drain Current-Max (IDM)

DS Breakdown Voltage-Min

Avalanche Energy Rating (Eas)

FET Technology

region:

Shipment :

Packaging:

Distributor:

Contact Email:

Condition:

Subcategory

Gate Charge (Qg) (Max) @ Vgs

JEDEC-95 Code

View Compare
BUK9225-55A,118

Nexperia USA Inc.

26 Weeks

Tin

Surface Mount

TO-252-3, DPak (2 Leads Tab), SC-63

YES

3

SILICON

-55°C~175°C TJ

Tape & Reel (TR)

Automotive, AEC-Q101, TrenchMOS™

2010

e3

Active

1 (Unlimited)

2

EAR99

8541.29.00.75

MOSFET (Metal Oxide)

GULL WING

3

R-PSSO-G2

1

94W Tc

Single

ENHANCEMENT MODE

94W

DRAIN

17 ns

N-Channel

SWITCHING

22m Ω @ 25A, 10V

2V @ 1mA

1724pF @ 25V

43A Tc

104ns

4.5V 10V

±15V

80 ns

82 ns

43A

15V

55V

0.027Ohm

55V

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
BUK9606-75B

NXP

-

-

-

-

YES

-

SILICON

-

-

-

-

e3

-

1 (Unlimited)

-

EAR99

-

-

GULL WING

-

R-PSSO-G2

1

-

-

ENHANCEMENT MODE

-

DRAIN

-

-

SWITCHING

-

-

-

-

-

-

-

-

-

-

-

-

0.0066Ohm

-

-

RoHS Compliant

-

2

Tin (Sn)

LOGIC LEVEL COMPATIBLE

SINGLE

245

not_compliant

30

Not Qualified

175°C

SINGLE WITH BUILT-IN DIODE

N-CHANNEL

75A

612A

75V

852 mJ

METAL-OXIDE SEMICONDUCTOR

-

-

-

-

-

-

-

-

-

BUK9225-55A,118 vs BUK9606-75B
BUK9245-55A

PHI

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

hk

DHL

TO252

Ventron

sales@ventronchip.com

New

-

-

-

BUK9225-55A,118 vs BUK9245-55A
BUK9509-40B,127

Nexperia USA Inc.

-

Tin

Through Hole

TO-220-3

NO

3

SILICON

-55°C~175°C TJ

Tube

TrenchMOS™

-

e3

Obsolete

1 (Unlimited)

3

EAR99

-

MOSFET (Metal Oxide)

-

3

-

1

157W Tc

Single

ENHANCEMENT MODE

157W

DRAIN

29 ns

N-Channel

SWITCHING

7m Ω @ 25A, 10V

2V @ 1mA

3600pF @ 25V

75A Tc

106ns

4.5V 10V

±15V

89 ns

108 ns

95A

15V

40V

-

40V

No

RoHS Compliant

-

-

-

LOGIC LEVEL COMPATIBLE

-

-

-

-

-

-

-

-

75A

-

-

-

-

-

-

-

-

-

-

FET General Purpose Power

32nC @ 5V

TO-220AB

BUK9225-55A,118 vs BUK9509-40B,127