Diodes Incorporated BSS84DW-7-F

Name: BSS84DW-7-F
Brand: Diodes Incorporated
SKU: 2848063-BSS84DW-7-F
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: BSS84DW-7-F

Manufacturer:: Diodes Incorporated

Ventron No:: 2848063-BSS84DW-7-F

Description:: MOSFET 2P-CH 50V 0.13A SC70-6

ECAD Model:

Datasheet:: BSS84DW-7-F

Specifications

Diodes Incorporated BSS84DW-7-F technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated BSS84DW-7-F.

Factory Lead Time
15 Weeks
Contact Plating
Tin
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
6-TSSOP, SC-88, SOT-363
Number of Pins
6
Weight
6.010099mg
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2007
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
6
Termination
SMD/SMT
ECCN Code
EAR99
Resistance
10Ohm
Subcategory
Other Transistors
Voltage - Rated DC
-50V
Max Power Dissipation
300mW
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Current Rating
-130mA
Time@Peak Reflow Temperature-Max (s)
40
Base Part Number
BSS84DW
Pin Count
6
Number of Elements
2
Number of Channels
2
Element Configuration
Dual
Operating Mode
ENHANCEMENT MODE
Power Dissipation
300mW
Turn On Delay Time
10 ns
FET Type
2 P-Channel (Dual)
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
10 Ω @ 100mA, 5V
Vgs(th) (Max) @ Id
2V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds
45pF @ 25V
Drain to Source Voltage (Vdss)
50V
Turn-Off Delay Time
18 ns
Continuous Drain Current (ID)
130mA
Threshold Voltage
-1.6V
Gate to Source Voltage (Vgs)
20V
Drain Current-Max (Abs) (ID)
0.13A
Drain to Source Breakdown Voltage
-50V
Dual Supply Voltage
-50V
FET Technology
METAL-OXIDE SEMICONDUCTOR
FET Feature
Logic Level Gate
Nominal Vgs
-1.6 V
Min Breakdown Voltage
50V
Height
1mm
Length
2.2mm
Width
1.35mm
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

The BSS84DW-7-F is a MOSFET 2P-CH 50V 0.13A SC70-6 from Diodes Inc. Transistors - FETs, MOSFETs - Arrays. This MOSFET is designed to provide high-speed switching and low on-resistance in a small package. It is suitable for a wide range of applications, including power management, motor control, and signal switching.Description

The BSS84DW-7-F is a MOSFET 2P-CH 50V 0.13A SC70-6 from Diodes Inc. Transistors - FETs, MOSFETs - Arrays. This MOSFET is designed to provide high-speed switching and low on-resistance in a small package. It has a drain-source voltage of 50V, a drain current of 0.13A, and a gate-source voltage of ±20V. It is available in a SC70-6 package.

Features

• High-speed switching
• Low on-resistance
• Drain-source voltage of 50V
• Drain current of 0.13A
• Gate-source voltage of ±20V
• Available in a SC70-6 package

Application

The BSS84DW-7-F is suitable for a wide range of applications, including power management, motor control, and signal switching. It is ideal for use in automotive, industrial, and consumer electronics.

BSS84DW-7-F More Descriptions

Transistor MOSFET Array Dual P-CH 50V 130mA 6-Pin SOT-363 T/RAvnet Japan
BSS84DW Series 50 V 10 Ohm Dual P-Channel Enhancement Mode Transistor SOT-363
BSS84DW-7-F TRANS MOSFET P-CH 50V 0.13A 6-PIN SOT- 363 RoHS
MOSFET P-CHANNEL SOT-363; Transistor Polarity:Dual P Channel; Continuous Drain Current Id:-130mA; Source Voltage Vds:-50V; On Resistance
MOSFET P-CHANNEL SOT-363; Transistor Polarity: Dual P Channel; Continuous Drain Current Id: -130mA; Drain Source Voltage Vds: -50V; On Resistance Rds(on): 10ohm; Rds(on) Test Voltage Vgs: -5V; Threshold Voltage Vgs: -1.6V; Power Dissipation Pd: 300mW; Transistor Case Style: SOT-363; No. of Pins: 6Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019); Continuous Drain Current Id, P Channel: -130mA; Current Id Max: -130mA; Drain Source Voltage Vds, P Channel: -50V; Module Configuration: Dual; On Resistance Rds(on), P Channel: 6ohm; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to 150°C; Termination Type: Surface Mount Device; Transistor Type: Enhancement; Voltage Vds Typ: -50V; Voltage Vgs Rds on Measurement: -5V

Certification