BSS8402DWQ-7

Diodes Incorporated BSS8402DWQ-7

Part Number:
BSS8402DWQ-7
Manufacturer:
Diodes Incorporated
Ventron No:
2473969-BSS8402DWQ-7
Description:
MOSFET N/P-CH 60V/50V
ECAD Model:
Datasheet:
BSS8402DWQ-7

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Specifications
Diodes Incorporated BSS8402DWQ-7 technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated BSS8402DWQ-7.
  • Factory Lead Time
    14 Weeks
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    6-TSSOP, SC-88, SOT-363
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Published
    2006
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    6
  • ECCN Code
    EAR99
  • Terminal Finish
    Matte Tin (Sn)
  • Additional Feature
    HIGH RELIABILITY
  • Max Power Dissipation
    200mW
  • Terminal Position
    DUAL
  • Terminal Form
    GULL WING
  • Peak Reflow Temperature (Cel)
    260
  • Time@Peak Reflow Temperature-Max (s)
    40
  • Reference Standard
    AEC-Q101
  • JESD-30 Code
    R-PDSO-G6
  • Number of Elements
    2
  • Configuration
    SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
  • Operating Mode
    ENHANCEMENT MODE
  • FET Type
    N and P-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    13.5 Ω @ 500mA, 10V
  • Vgs(th) (Max) @ Id
    2.5V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    50pF @ 25V
  • Current - Continuous Drain (Id) @ 25°C
    115mA 130mA
  • Drain to Source Voltage (Vdss)
    60V 50V
  • Polarity/Channel Type
    N-CHANNEL AND P-CHANNEL
  • Continuous Drain Current (ID)
    130mA
  • Drain Current-Max (Abs) (ID)
    0.115A
  • Drain-source On Resistance-Max
    7.5Ohm
  • DS Breakdown Voltage-Min
    60V
  • FET Technology
    METAL-OXIDE SEMICONDUCTOR
  • FET Feature
    Logic Level Gate
  • Feedback Cap-Max (Crss)
    5 pF
  • RoHS Status
    ROHS3 Compliant
Description
BSS8402DWQ-7 Overview
This product is manufactured by Diodes Incorporated and belongs to the category of Transistors - FETs, MOSFETs - Arrays. The images we provide are for reference only, for detailed product information please see specification sheet BSS8402DWQ-7 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of BSS8402DWQ-7. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
BSS8402DWQ-7 More Descriptions
Transistor MOSFET Array N-CH/P-CH 60V/50V 115mA 6-Pin SOT-363 T/R
Trans MOSFET N/P-CH 60V/50V 0.115A/0.13A Automotive AEC-Q101 6-Pin SOT-363 T/R
Small Signal Field-Effect Transistor, 0.115A I(D), 60V, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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