Nexperia USA Inc. BSS138PS,115

Name: BSS138PS,115
Brand: Nexperia USA Inc.
SKU: 3585699-BSS138PS,115
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: BSS138PS,115

Manufacturer:: Nexperia USA Inc.

Ventron No:: 3585699-BSS138PS,115

Description:: MOSFET 2N-CH 60V 0.32A 6TSSOP

ECAD Model:

Datasheet:: BSS138PS,115

Specifications

Nexperia USA Inc. BSS138PS,115 technical specifications, attributes, parameters and parts with similar specifications to Nexperia USA Inc. BSS138PS,115.

Factory Lead Time
4 Weeks
Contact Plating
Tin
Mounting Type
Surface Mount
Package / Case
6-TSSOP, SC-88, SOT-363
Surface Mount
YES
Number of Pins
6
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Series
Automotive, AEC-Q101, TrenchMOS™
Published
2010
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
6
ECCN Code
EAR99
Resistance
1.6Ohm
Additional Feature
LOGIC LEVEL COMPATIBLE
Max Power Dissipation
420mW
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Time@Peak Reflow Temperature-Max (s)
30
Pin Count
6
Number of Elements
2
Configuration
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Operating Mode
ENHANCEMENT MODE
Power Dissipation
280mW
Turn On Delay Time
2 ns
Power - Max
420mW
FET Type
2 N-Channel (Dual)
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
1.6 Ω @ 300mA, 10V
Vgs(th) (Max) @ Id
1.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
50pF @ 10V
Gate Charge (Qg) (Max) @ Vgs
0.8nC @ 4.5V
Rise Time
3ns
Fall Time (Typ)
4 ns
Turn-Off Delay Time
9 ns
Continuous Drain Current (ID)
320mA
Threshold Voltage
1.2V
Gate to Source Voltage (Vgs)
20V
Max Dual Supply Voltage
60V
Drain Current-Max (Abs) (ID)
0.32A
Drain to Source Breakdown Voltage
60V
FET Technology
METAL-OXIDE SEMICONDUCTOR
FET Feature
Logic Level Gate
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

Nexperia Transistors - FETs, MOSFETs - Arrays BSS138PS,115 is a MOSFET 2N-CH 60V 0.32A 6TSSOP. This product is designed for use in a variety of applications, including power management, signal switching, and voltage regulation.Description

The Nexperia Transistors - FETs, MOSFETs - Arrays BSS138PS,115 is a MOSFET 2N-CH 60V 0.32A 6TSSOP. This product is designed to provide reliable and efficient performance in a variety of applications. It Features a low on-resistance of 0.32A, a maximum drain-source voltage of 60V, and a maximum gate-source voltage of 20V. The product is available in a 6TSSOP package.

Features

• Low on-resistance of 0.32A
• Maximum drain-source voltage of 60V
• Maximum gate-source voltage of 20V
• Available in a 6TSSOP package

Application

The Nexperia Transistors - FETs, MOSFETs - Arrays BSS138PS,115 is suitable for use in a variety of applications, including power management, signal switching, and voltage regulation. It is ideal for use in automotive, industrial, and consumer electronics applications.

BSS138PS,115 More Descriptions

Transistor MOSFET Array Dual N-CH 60V 320mA 6-Pin TSSOP T/RAvnet Japan
BSS138PS - 60 V, 320 mA dual N-channel Trench MOSFET
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BSS138PS,115 Nexperia MOSFET N-CH 60V 320mA 6-TSSOP RoHS
MOSFET ARRAY, DUAL N CHANNEL, 60V, 320MA; MOSFET ARRAY, DUAL N CHANNEL, 60V, 320MA, 6-SOT-363; Transistor Polarity:Dual N Channel; Continuous Drain Current Id:320mA; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.9ohm; Rds(on) Test Voltage Vgs:10V; No. of Pins:6Pins
Transistor Polarity = N-Channel / Configuration = Dual / Continuous Drain Current (Id) mA = 320 / Drain-Source Voltage (Vds) V = 60 / ON Resistance (Rds(on)) mOhm = 900 / Gate-Source Voltage V = 20 / Fall Time ns = 4 / Rise Time ns = 3 / Turn-OFF Delay Time ns = 9 / Turn-ON Delay Time ns = 2 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = SOT-363 / Pins = 6 / Mounting Type = SMD / Automotive Qualification Standard = AEC-Q101 / Power Dissipation (Pd) mW = 320

Certification