Diodes Incorporated BSS138DW-7-F

Name: BSS138DW-7-F
Brand: Diodes Incorporated
SKU: 2473220-BSS138DW-7-F
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: BSS138DW-7-F

Manufacturer:: Diodes Incorporated

Ventron No:: 2473220-BSS138DW-7-F

Description:: MOSFET 2N-CH 50V 0.2A SC70-6

ECAD Model:

Datasheet:: BSS138DW-7-F

Specifications

Diodes Incorporated BSS138DW-7-F technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated BSS138DW-7-F.

Factory Lead Time
15 Weeks
Contact Plating
Tin
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
6-TSSOP, SC-88, SOT-363
Number of Pins
6
Supplier Device Package
SOT-363
Weight
6.010099mg
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2012
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
6
Resistance
3.5Ohm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Voltage - Rated DC
50V
Max Power Dissipation
200mW
Current Rating
200mA
Number of Elements
2
Number of Channels
2
Element Configuration
Dual
Power Dissipation
200mW
Turn On Delay Time
20 ns
Power - Max
200mW
FET Type
2 N-Channel (Dual)
Rds On (Max) @ Id, Vgs
3.5Ohm @ 220mA, 10V
Vgs(th) (Max) @ Id
1.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
50pF @ 10V
Current - Continuous Drain (Id) @ 25°C
200mA
Drain to Source Voltage (Vdss)
50V
Turn-Off Delay Time
20 ns
Continuous Drain Current (ID)
200mA
Threshold Voltage
1.2V
Gate to Source Voltage (Vgs)
20V
Drain to Source Breakdown Voltage
75V
Input Capacitance
50pF
Max Junction Temperature (Tj)
150°C
FET Feature
Logic Level Gate
Drain to Source Resistance
3.5Ohm
Rds On Max
3.5 Ω
Nominal Vgs
1.2 V
Min Breakdown Voltage
50V
Height
1.1mm
Length
2.2mm
Width
1.35mm
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

The BSS138DW-7-F from Diodes Inc. is a dual MOSFET, N Channel, 50 V, 200 mA, 3.5 ohm, SOT-363, Surface Mount. This device is designed to provide high performance and reliability in a wide range of applications. It is suitable for use in power management, motor control, and switching applications.

Features

• Dual MOSFET, N Channel
• 50 V, 200 mA, 3.5 ohm
• SOT-363, Surface Mount
• Low on-resistance
• Low gate charge
• Low input capacitance
• High speed switching
• High power density
• RoHS compliant

Application

• Power management
• Motor control
• Switching applications
• Automotive
• Industrial
• Consumer electronics

BSS138DW-7-F More Descriptions

Dual N-Channel 50 V 3.5 Ohm Surface Mount Enhancement MosFet - SOT-363
Transistor MOSFET Array Dual N-CH 50V 200mA 6-Pin SOT-363 T/R
MOSFET, NN CH, 50V, SOT-363; Transistor Polarity:Dual N Channel; Continuous Drain Current Id:200mA; Source Voltage Vds:50V; On Resistance
MOSFET Operating temperature: -55...150 °C Housing type: SOT-363 Polarity: N/N Variants: Enhancement mode Power dissipation: 0.2 W
MOSFET, NN CH, 50V, SOT-363; Transistor Polarity: Dual N Channel; Continuous Drain Current Id: 200mA; Drain Source Voltage Vds: 50V; On Resistance Rds(on): 3.5ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.2V; Power Dissipation Pd: 200mW; Transistor Case Style: SOT-363; No. of Pins: 6Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019); Continuous Drain Current Id, N Channel: 200mA; Current Id Max: 200mA; Drain Source Voltage Vds, N Channel: 50V; Module Configuration: Dual; On Resistance Rds(on), N Channel: 1.4ohm; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to 150°C; Termination Type: Surface Mount Device; Transistor Type: Enhancement; Voltage Vds Typ: 50V; Voltage Vgs Rds on Measurement: 10V

Certification