ON Semiconductor BSS123LT1

Name: BSS123LT1
Brand: ON Semiconductor
SKU: 2488863-BSS123LT1
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: BSS123LT1

Manufacturer:: ON Semiconductor

Ventron No:: 2488863-BSS123LT1

Description:: MOSFET N-CH 100V 170MA SOT-23

ECAD Model:

Datasheet:: BSS123LT1 Datasheet

Specifications

ON Semiconductor BSS123LT1 technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor BSS123LT1.

Lifecycle Status
LAST SHIPMENTS (Last Updated: 3 days ago)
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Number of Pins
3
Packaging
Cut Tape (CT)
Published
2005
JESD-609 Code
e0
Pbfree Code
no
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Tin/Lead (Sn/Pb)
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Subcategory
FET General Purpose Power
Voltage - Rated DC
100V
Max Power Dissipation
225mW
Technology
MOSFET (Metal Oxide)
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
240
Reach Compliance Code
not_compliant
Current Rating
170mA
Time@Peak Reflow Temperature-Max (s)
30
Pin Count
3
Qualification Status
Not Qualified
Number of Elements
1
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
225mW
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
6 Ω @ 100mA, 10V
Vgs(th) (Max) @ Id
2.8V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds
20pF @ 25V
Current - Continuous Drain (Id) @ 25°C
170mA Ta
Turn-Off Delay Time
40 ns
Continuous Drain Current (ID)
170mA
Gate to Source Voltage (Vgs)
20V
Drain Current-Max (Abs) (ID)
0.17A
Drain-source On Resistance-Max
6Ohm
Drain to Source Breakdown Voltage
100V
RoHS Status
Non-RoHS Compliant
Lead Free
Contains Lead

Description

Description
The BSS123LT1G is an N-channel Power MOSFET with drain-source voltage at 100VDC and drain current at 170mA. A special kind of metal-oxide-semiconductor field-effect transistor (MOSFET) made to handle high power levels is known as a power MOSFET.

Features
Pb?Free Packages are Available
AEC-Q101 Qualified
PPAP Capable
Gate Charge (QG)
Threshold Voltage (VGS(th))

Applications
Automotive
Switch, buck and synchronous rectification
Uninterruptible Power Supplies (UPS)
Small motor control
Switch Mode Power Supplies (SMPS)

BSS123LT1 More Descriptions

Power MOSFET 170 mA, 100 V, N-Channel SOT-23
Trans MOSFET N-CH 100V 0.17A 3-Pin SOT-23 T/R
Small Signal Field-Effect Transistor, 0.17A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236
MOSFET, N SOT-23; Transistor Type:MOSFET; Transistor Polarity:N; Current, Id Cont:0.17A; Resistance, Rds On:6ohm; Case Style:SOT-23 (TO-236); Termination Type:SMD; Current, Idm Pulse:0.68A; External Depth:2.5mm; External Length / Height:1.12mm; No. of Pins:3; Power Dissipation:0.225W; Power, Pd:0.225W; SMD Marking:SA; Temperature, Current:25°C; Temperature, Full Power Rating:25°C; Transistors, No. of:1; Voltage, Vds Max:100V; Voltage, Vgs th Max:2.8V; Width, External:3.05mm; Width, Tape:8mm

Product Comparison

The three parts on the right have similar specifications to BSS123LT1.

Image

Part Number

Manufacturer

Lifecycle Status

Mount

Mounting Type

Package / Case

Number of Pins

Packaging

Published

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Terminal Finish

Max Operating Temperature

Min Operating Temperature

Subcategory

Voltage - Rated DC

Max Power Dissipation

Technology

Terminal Position

Terminal Form

Peak Reflow Temperature (Cel)

Reach Compliance Code

Current Rating

Time@Peak Reflow Temperature-Max (s)

Pin Count

Qualification Status

Number of Elements

Element Configuration

Operating Mode

Power Dissipation

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Turn-Off Delay Time

Continuous Drain Current (ID)

Gate to Source Voltage (Vgs)

Drain Current-Max (Abs) (ID)

Drain-source On Resistance-Max

Drain to Source Breakdown Voltage

RoHS Status

Lead Free

Supplier Device Package

Operating Temperature

Series

Power Dissipation-Max

Gate Charge (Qg) (Max) @ Vgs

Drain to Source Voltage (Vdss)

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Input Capacitance

Rds On Max

Transistor Element Material

Additional Feature

Configuration

Voltage

Current

Rise Time

Feedback Cap-Max (Crss)

View Compare
BSS123LT1

ON Semiconductor

LAST SHIPMENTS (Last Updated: 3 days ago)

Surface Mount

Surface Mount

TO-236-3, SC-59, SOT-23-3

3

Cut Tape (CT)

2005

e0

no

Obsolete

1 (Unlimited)

3

EAR99

Tin/Lead (Sn/Pb)

150°C

-55°C

FET General Purpose Power

100V

225mW

MOSFET (Metal Oxide)

DUAL

GULL WING

240

not_compliant

170mA

30

3

Not Qualified

1

Single

ENHANCEMENT MODE

225mW

N-Channel

SWITCHING

6 Ω @ 100mA, 10V

2.8V @ 1mA

20pF @ 25V

170mA Ta

40 ns

170mA

20V

0.17A

6Ohm

100V

Non-RoHS Compliant

Contains Lead

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
BSS123L7874XT

Infineon Technologies

-

Surface Mount

Surface Mount

TO-236-3, SC-59, SOT-23-3

-

Tape & Reel (TR)

1999

-

-

Discontinued

1 (Unlimited)

-

-

-

150°C

-55°C

-

-

-

MOSFET (Metal Oxide)

-

-

-

-

-

-

-

-

-

-

-

-

N-Channel

-

6Ohm @ 170mA, 10V

1.8V @ 50μA

69pF @ 25V

170mA Ta

-

170mA

-

-

-

-

ROHS3 Compliant

-

SOT-23-3

-55°C~150°C TJ

SIPMOS®

360mW Ta

2.67nC @ 10V

100V

4.5V 10V

±20V

69pF

6 Ω

-

-

-

-

-

-

-

BSS123LT1 vs BSS123L7874XT
BSS138N E6908

Infineon Technologies

-

-

Surface Mount

TO-236-3, SC-59, SOT-23-3

-

Tape & Reel (TR)

2007

-

-

Obsolete

1 (Unlimited)

-

-

-

-

-

-

-

-

MOSFET (Metal Oxide)

-

-

-

-

-

-

-

-

-

-

-

-

N-Channel

-

3.5 Ω @ 230mA, 10V

1.4V @ 250μA

41pF @ 25V

230mA Ta

-

-

-

-

-

-

Non-RoHS Compliant

-

-

-55°C~150°C TJ

SIPMOS®

360mW Ta

1.4nC @ 10V

60V

4.5V 10V

±20V

-

-

-

-

-

-

-

-

-

BSS123LT1 vs BSS138N E6908
BSS131E6327

Infineon Technologies

-

Surface Mount

Surface Mount

TO-236-3, SC-59, SOT-23-3

3

Tape & Reel (TR)

1999

e3

-

Obsolete

1 (Unlimited)

3

EAR99

MATTE TIN

-

-

FET General Purpose Power

240V

-

MOSFET (Metal Oxide)

DUAL

GULL WING

-

unknown

100mA

-

3

Not Qualified

1

-

ENHANCEMENT MODE

360mW

N-Channel

SWITCHING

14 Ω @ 100mA, 10V

1.8V @ 56μA

77pF @ 25V

110mA Ta

-

110mA

20V

-

26Ohm

-

RoHS Compliant

Contains Lead

-

-55°C~150°C TJ

SIPMOS®

360mW Ta

3.1nC @ 10V

-

4.5V 10V

±20V

-

-

SILICON

LOGIC LEVEL COMPATIBLE

SINGLE WITH BUILT-IN DIODE

240V

1A

8ns

5 pF

BSS123LT1 vs BSS131E6327