Infineon Technologies BSS131E6327

Name: BSS131E6327
Brand: Infineon Technologies
SKU: 2492046-BSS131E6327
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: BSS131E6327

Manufacturer:: Infineon Technologies

Ventron No:: 2492046-BSS131E6327

Description:: MOSFET N-CH 240V .11A SOT-23

ECAD Model:

Datasheet:: BSS131

Specifications

Infineon Technologies BSS131E6327 technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies BSS131E6327.

Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Series
SIPMOS®
Published
1999
JESD-609 Code
e3
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
MATTE TIN
Additional Feature
LOGIC LEVEL COMPATIBLE
Subcategory
FET General Purpose Power
Voltage - Rated DC
240V
Technology
MOSFET (Metal Oxide)
Terminal Position
DUAL
Terminal Form
GULL WING
Reach Compliance Code
unknown
Current Rating
100mA
Pin Count
3
Qualification Status
Not Qualified
Number of Elements
1
Configuration
SINGLE WITH BUILT-IN DIODE
Voltage
240V
Power Dissipation-Max
360mW Ta
Current
1A
Operating Mode
ENHANCEMENT MODE
Power Dissipation
360mW
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
14 Ω @ 100mA, 10V
Vgs(th) (Max) @ Id
1.8V @ 56μA
Input Capacitance (Ciss) (Max) @ Vds
77pF @ 25V
Current - Continuous Drain (Id) @ 25°C
110mA Ta
Gate Charge (Qg) (Max) @ Vgs
3.1nC @ 10V
Rise Time
8ns
Drive Voltage (Max Rds On,Min Rds On)
4.5V 10V
Vgs (Max)
±20V
Continuous Drain Current (ID)
110mA
Gate to Source Voltage (Vgs)
20V
Drain-source On Resistance-Max
26Ohm
Feedback Cap-Max (Crss)
5 pF
RoHS Status
RoHS Compliant
Lead Free
Contains Lead

Description

BSS131E6327 Overview
With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 77pF @ 25V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 110mA.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.Using drive voltage (4.5V 10V) reduces this device's overall power consumption.

BSS131E6327 Features
a continuous drain current (ID) of 110mA

BSS131E6327 Applications
There are a lot of Infineon Technologies
BSS131E6327 applications of single MOSFETs transistors.

Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification

BSS131E6327 More Descriptions

INFINEON SMD MOSFET NFET 240V 110mA 14Ω 150°C SOT-23 BSS131
Trans MOSFET N-CH 240V 0.11A Automotive 3-Pin SOT-23
Small Signal Field-Effect Transistor, 0.1A I(D), 240V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
MOSFET N-CH 240V 110MA SOT23-3
French Electronic Distributor since 1988

Product Comparison

The three parts on the right have similar specifications to BSS131E6327.

Image

Part Number

Manufacturer

Mount

Mounting Type

Package / Case

Number of Pins

Transistor Element Material

Operating Temperature

Packaging

Series

Published

JESD-609 Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Terminal Finish

Additional Feature

Subcategory

Voltage - Rated DC

Technology

Terminal Position

Terminal Form

Reach Compliance Code

Current Rating

Pin Count

Qualification Status

Number of Elements

Configuration

Voltage

Power Dissipation-Max

Current

Operating Mode

Power Dissipation

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Continuous Drain Current (ID)

Gate to Source Voltage (Vgs)

Drain-source On Resistance-Max

Feedback Cap-Max (Crss)

RoHS Status

Lead Free

Surface Mount

Drain to Source Voltage (Vdss)

Drain Current-Max (Abs) (ID)

FET Feature

Supplier Device Package

Max Operating Temperature

Min Operating Temperature

Input Capacitance

Rds On Max

HTS Code

JESD-30 Code

View Compare
BSS131E6327

Infineon Technologies

Surface Mount

Surface Mount

TO-236-3, SC-59, SOT-23-3

3

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

SIPMOS®

1999

e3

Obsolete

1 (Unlimited)

3

EAR99

MATTE TIN

LOGIC LEVEL COMPATIBLE

FET General Purpose Power

240V

MOSFET (Metal Oxide)

DUAL

GULL WING

unknown

100mA

3

Not Qualified

1

SINGLE WITH BUILT-IN DIODE

240V

360mW Ta

1A

ENHANCEMENT MODE

360mW

N-Channel

SWITCHING

14 Ω @ 100mA, 10V

1.8V @ 56μA

77pF @ 25V

110mA Ta

3.1nC @ 10V

8ns

4.5V 10V

±20V

110mA

20V

26Ohm

5 pF

RoHS Compliant

Contains Lead

-

-

-

-

-

-

-

-

-

-

-

-
BSS169 E6327

Infineon Technologies

-

Surface Mount

TO-236-3, SC-59, SOT-23-3

-

-

-55°C~150°C TJ

Tape & Reel (TR)

SIPMOS®

2007

-

Obsolete

1 (Unlimited)

-

-

-

-

FET General Purpose Power

-

MOSFET (Metal Oxide)

-

-

-

-

-

-

-

Single

-

360mW Ta

-

-

-

N-Channel

-

6 Ω @ 170mA, 10V

1.8V @ 50μA

68pF @ 25V

170mA Ta

2.8nC @ 7V

-

0V 10V

±20V

-

-

-

-

RoHS Compliant

-

YES

100V

0.17A

Depletion Mode

-

-

-

-

-

-

-

BSS131E6327 vs BSS169 E6327
BSS123L7874XT

Infineon Technologies

Surface Mount

Surface Mount

TO-236-3, SC-59, SOT-23-3

-

-

-55°C~150°C TJ

Tape & Reel (TR)

SIPMOS®

1999

-

Discontinued

1 (Unlimited)

-

-

-

-

-

-

MOSFET (Metal Oxide)

-

-

-

-

-

-

-

-

-

360mW Ta

-

-

-

N-Channel

-

6Ohm @ 170mA, 10V

1.8V @ 50μA

69pF @ 25V

170mA Ta

2.67nC @ 10V

-

4.5V 10V

±20V

170mA

-

-

-

ROHS3 Compliant

-

-

100V

-

-

SOT-23-3

150°C

-55°C

69pF

6 Ω

-

-

BSS131E6327 vs BSS123L7874XT
BSS119E6327

Infineon Technologies

Surface Mount

Surface Mount

TO-236-3, SC-59, SOT-23-3

-

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

SIPMOS®

2000

e3

Obsolete

1 (Unlimited)

3

EAR99

MATTE TIN

-

FET General Purpose Power

100V

MOSFET (Metal Oxide)

DUAL

GULL WING

unknown

170mA

3

Not Qualified

1

SINGLE WITH BUILT-IN DIODE

-

360mW Ta

-

ENHANCEMENT MODE

-

N-Channel

-

6 Ω @ 170mA, 10V

2.3V @ 50μA

78pF @ 25V

170mA Ta

2.5nC @ 10V

5ns

4.5V 10V

±20V

170mA

-

10Ohm

6 pF

RoHS Compliant

Contains Lead

-

-

0.17A

-

-

-

-

-

-

8541.21.00.95

R-PDSO-G3

BSS131E6327 vs BSS119E6327