Diodes Incorporated BSR33TA
- Part Number:
- BSR33TA
- Manufacturer:
- Diodes Incorporated
- Ventron No:
- 2464324-BSR33TA
- Description:
- TRANS PNP 80V 1A SOT-89
- Datasheet:
- BSR33TA
Diodes Incorporated BSR33TA technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated BSR33TA.
- Factory Lead Time14 Weeks
- Contact PlatingTin
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-243AA
- Number of Pins4
- Weight51.993025mg
- Transistor Element MaterialSILICON
- Operating Temperature-65°C~150°C TJ
- PackagingTape & Reel (TR)
- Published2006
- JESD-609 Codee3
- Pbfree Codeno
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- TerminationSMD/SMT
- ECCN CodeEAR99
- SubcategoryOther Transistors
- Voltage - Rated DC-80V
- Max Power Dissipation1W
- Terminal FormFLAT
- Peak Reflow Temperature (Cel)260
- Current Rating-1A
- Frequency100MHz
- Time@Peak Reflow Temperature-Max (s)40
- Base Part NumberBSR33
- JESD-30 CodeR-PSSO-F3
- Qualification StatusNot Qualified
- Number of Elements1
- Element ConfigurationSingle
- Power Dissipation1W
- Case ConnectionCOLLECTOR
- Transistor ApplicationSWITCHING
- Gain Bandwidth Product100MHz
- Polarity/Channel TypePNP
- Transistor TypePNP
- Collector Emitter Voltage (VCEO)80V
- Max Collector Current1A
- DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 100mA 5V
- Current - Collector Cutoff (Max)100nA ICBO
- Vce Saturation (Max) @ Ib, Ic500mV @ 50mA, 500mA
- Collector Emitter Breakdown Voltage80V
- Transition Frequency100MHz
- Collector Emitter Saturation Voltage-500mV
- Max Breakdown Voltage80V
- Collector Base Voltage (VCBO)90V
- Emitter Base Voltage (VEBO)5V
- hFE Min50
- Continuous Collector Current-1A
- Height1.5mm
- Length4.5mm
- Width2.5mm
- REACH SVHCNo SVHC
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
BSR33TA Overview
DC current gain in this device equals 100 @ 100mA 5V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is -500mV, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 500mV @ 50mA, 500mA.Single BJT transistor is essential to maintain the continuous collector voltage at -1A to achieve high efficiency.An emitter's base voltage can be kept at 5V to gain high efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a -1A current rating.As a result, the part has a transition frequency of 100MHz.Breakdown input voltage is 80V volts.In extreme cases, the collector current can be as low as 1A volts.
BSR33TA Features
the DC current gain for this device is 100 @ 100mA 5V
a collector emitter saturation voltage of -500mV
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
the current rating of this device is -1A
a transition frequency of 100MHz
BSR33TA Applications
There are a lot of Diodes Incorporated
BSR33TA applications of single BJT transistors.
Inverter
Interface
Driver
Muting
DC current gain in this device equals 100 @ 100mA 5V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is -500mV, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 500mV @ 50mA, 500mA.Single BJT transistor is essential to maintain the continuous collector voltage at -1A to achieve high efficiency.An emitter's base voltage can be kept at 5V to gain high efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a -1A current rating.As a result, the part has a transition frequency of 100MHz.Breakdown input voltage is 80V volts.In extreme cases, the collector current can be as low as 1A volts.
BSR33TA Features
the DC current gain for this device is 100 @ 100mA 5V
a collector emitter saturation voltage of -500mV
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
the current rating of this device is -1A
a transition frequency of 100MHz
BSR33TA Applications
There are a lot of Diodes Incorporated
BSR33TA applications of single BJT transistors.
Inverter
Interface
Driver
Muting
BSR33TA More Descriptions
BSR33 Series PNP 80 V 1 A 1 W Power Transistor - SOT-89
Small Signal Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon
Trans GP BJT PNP 80V 1A 2100mW 4-Pin(3 Tab) SOT-89 T/R
TRANSISTOR, PNP, 80V, SOT-89; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:80V; Power Dissipation Pd:1W; DC Collector Current:500mA; DC Current Gain hFE:100; Operating Temperature Range:-65°C to 150°C; Transistor Case Style:SOT-89; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Collector Emitter Voltage Vces:250mV; Continuous Collector Current Ic Max:1A; Current Ic Continuous a Max:1A; Current Ic hFE:500mA; Gain Bandwidth ft Min:100MHz; Gain Bandwidth ft Typ:100MHz; Hfe Min:50; Package / Case:SOT-89; Power Dissipation Pd:1W; Power Dissipation Ptot Max:1W; Pulsed Current Icm:2A; Termination Type:SMD; Voltage Vcbo:90V
Small Signal Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon
Trans GP BJT PNP 80V 1A 2100mW 4-Pin(3 Tab) SOT-89 T/R
TRANSISTOR, PNP, 80V, SOT-89; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:80V; Power Dissipation Pd:1W; DC Collector Current:500mA; DC Current Gain hFE:100; Operating Temperature Range:-65°C to 150°C; Transistor Case Style:SOT-89; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Collector Emitter Voltage Vces:250mV; Continuous Collector Current Ic Max:1A; Current Ic Continuous a Max:1A; Current Ic hFE:500mA; Gain Bandwidth ft Min:100MHz; Gain Bandwidth ft Typ:100MHz; Hfe Min:50; Package / Case:SOT-89; Power Dissipation Pd:1W; Power Dissipation Ptot Max:1W; Pulsed Current Icm:2A; Termination Type:SMD; Voltage Vcbo:90V
The three parts on the right have similar specifications to BSR33TA.
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ImagePart NumberManufacturerFactory Lead TimeContact PlatingMountMounting TypePackage / CaseNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsTerminationECCN CodeSubcategoryVoltage - Rated DCMax Power DissipationTerminal FormPeak Reflow Temperature (Cel)Current RatingFrequencyTime@Peak Reflow Temperature-Max (s)Base Part NumberJESD-30 CodeQualification StatusNumber of ElementsElement ConfigurationPower DissipationCase ConnectionTransistor ApplicationGain Bandwidth ProductPolarity/Channel TypeTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageTransition FrequencyCollector Emitter Saturation VoltageMax Breakdown VoltageCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)hFE MinContinuous Collector CurrentHeightLengthWidthREACH SVHCRoHS StatusLead FreePin CountPower - MaxFrequency - TransitionTerminal FinishAdditional FeatureTerminal PositionReference StandardConfigurationTurn Off Time-Max (toff)Turn On Time-Max (ton)Radiation HardeningView Compare
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BSR33TA14 WeeksTinSurface MountSurface MountTO-243AA451.993025mgSILICON-65°C~150°C TJTape & Reel (TR)2006e3noActive1 (Unlimited)3SMD/SMTEAR99Other Transistors-80V1WFLAT260-1A100MHz40BSR33R-PSSO-F3Not Qualified1Single1WCOLLECTORSWITCHING100MHzPNPPNP80V1A100 @ 100mA 5V100nA ICBO500mV @ 50mA, 500mA80V100MHz-500mV80V90V5V50-1A1.5mm4.5mm2.5mmNo SVHCROHS3 CompliantLead Free------------
-
4 WeeksTinSurface MountSurface MountTO-243AA4--150°C TJTape & Reel (TR)2009e3-Active1 (Unlimited)-----1.35W-NOT SPECIFIED--NOT SPECIFIEDBSR33---------PNP500mV1A100 @ 100mA 5V100nA ICBO500mV @ 50mA, 500mA80V--80V90V5V------ROHS3 Compliant-31.35W100MHz--------
-
14 Weeks-Surface MountSurface MountTO-243AA--SILICON-65°C~150°C TJTape & Reel (TR)2017e3-Active1 (Unlimited)3-EAR99--2.1WFLAT-----R-PSSO-F3-1--COLLECTORSWITCHING-PNPPNP500mV1A100 @ 100mA 5V100nA ICBO500mV @ 50mA, 500mA80V100MHz----------ROHS3 Compliant--2.1W100MHzMatte Tin (Sn)HIGH RELIABILITYSINGLEAEC-Q101SINGLE650ns500ns-
-
4 WeeksTinSurface MountSurface MountTO-243AA4-SILICON150°C TJTape & Reel (TR)2009e3-Active1 (Unlimited)3-EAR99--1.35WFLAT--100MHz-BSR31R-PSSO-F3-1Single1.35WCOLLECTORSWITCHING100MHzPNPPNP60V1A100 @ 100mA 5V100nA ICBO500mV @ 50mA, 500mA60V100MHz-60V70V5V------ROHS3 CompliantLead Free3---------No
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