SIEMENS BSP315 technical specifications, attributes, parameters and parts with similar specifications to SIEMENS BSP315.
- Mounting TypeSurface Mount
- Package / CaseTO-261-4, TO-261AA
- Surface MountYES
- Transistor Element MaterialSILICON
- Operating Temperature150°C
- Part StatusObsolete
- Number of Terminations4
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionDUAL
- Terminal FormGULL WING
- JESD-30 CodeR-PDSO-G4
- Qualification StatusCOMMERCIAL
- Number of Elements1
- ConfigurationSINGLE
- Power Dissipation-Max1.8W
- Operating ModeENHANCEMENT MODE
- Case ConnectionDRAIN
- FET TypeP-Channel
- Rds On (Max) @ Id, Vgs0.8 Ω
- Current - Continuous Drain (Id) @ 25°C1A
- Drain to Source Voltage (Vdss)50V
- Drain Current-Max (Abs) (ID)1A
- Pulsed Drain Current-Max (IDM)4A
- DS Breakdown Voltage-Min50V
- RoHS StatusROHS3 Compliant
BSP315 Overview
A device can conduct a maximum continuous current of [1A] according to its drain current.As far as peak drain current is concerned, its maximum pulsed current is 4A.The DS breakdown voltage should be maintained above 50V to maintain normal operation.To operate this transistor, you will need a 50V drain to source voltage (Vdss).
BSP315 Features
based on its rated peak drain current 4A.
a 50V drain to source voltage (Vdss)
BSP315 Applications
There are a lot of Rochester Electronics, LLC
BSP315 applications of single MOSFETs transistors.
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
A device can conduct a maximum continuous current of [1A] according to its drain current.As far as peak drain current is concerned, its maximum pulsed current is 4A.The DS breakdown voltage should be maintained above 50V to maintain normal operation.To operate this transistor, you will need a 50V drain to source voltage (Vdss).
BSP315 Features
based on its rated peak drain current 4A.
a 50V drain to source voltage (Vdss)
BSP315 Applications
There are a lot of Rochester Electronics, LLC
BSP315 applications of single MOSFETs transistors.
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
BSP315 More Descriptions
French Electronic Distributor since 1988
The three parts on the right have similar specifications to BSP315.
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ImagePart NumberManufacturerMounting TypePackage / CaseSurface MountTransistor Element MaterialOperating TemperaturePart StatusNumber of TerminationsTechnologyTerminal PositionTerminal FormJESD-30 CodeQualification StatusNumber of ElementsConfigurationPower Dissipation-MaxOperating ModeCase ConnectionFET TypeRds On (Max) @ Id, VgsCurrent - Continuous Drain (Id) @ 25°CDrain to Source Voltage (Vdss)Drain Current-Max (Abs) (ID)Pulsed Drain Current-Max (IDM)DS Breakdown Voltage-MinRoHS StatusNumber of TerminalsECCN CodePolarity/Channel TypeDrain-source On Resistance-MaxFET TechnologyJESD-609 CodeTerminal FinishHTS CodeSubcategoryPin CountOperating Temperature (Max)Power Dissipation-Max (Abs)View Compare
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BSP315Surface MountTO-261-4, TO-261AAYESSILICON150°CObsolete4MOSFET (Metal Oxide)DUALGULL WINGR-PDSO-G4COMMERCIAL1SINGLE1.8WENHANCEMENT MODEDRAINP-Channel0.8 Ω1A50V1A4A50VROHS3 Compliant------------- -
--YESSILICON----DUALGULL WINGR-PDSO-G4Not Qualified1SINGLE-ENHANCEMENT MODE-----2.9A-60V-4EAR99N-CHANNEL0.12OhmMETAL-OXIDE SEMICONDUCTOR-------
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--YESSILICON----DUALGULL WINGR-PDSO-G4Not Qualified1SINGLE-ENHANCEMENT MODEDRAIN----0.37A-200VNon-RoHS Compliant4EAR99P-CHANNEL6OhmMETAL-OXIDE SEMICONDUCTORe0Tin/Lead (Sn/Pb)8541.29.00.75Other Transistors4150°C1.8W
-
--YESSILICON----DUALGULL WINGR-PDSO-G4Not Qualified1SINGLE-ENHANCEMENT MODEDRAIN----0.65A-100VNon-RoHS Compliant4EAR99P-CHANNEL2.2OhmMETAL-OXIDE SEMICONDUCTORe0Tin/Lead (Sn/Pb)8541.29.00.75Other Transistors4150°C1.8W
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