BSP317

SIEMENS BSP317

Part Number:
BSP317
Manufacturer:
SIEMENS
Ventron No:
5632940-BSP317
Description:
SIPMOS Small-Signal Transistor (P channel Enhancement mode Logic Level)
ECAD Model:
Datasheet:
BSP317

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Specifications
SIEMENS BSP317 technical specifications, attributes, parameters and parts with similar specifications to SIEMENS BSP317.
  • Surface Mount
    YES
  • Number of Terminals
    4
  • Transistor Element Material
    SILICON
  • JESD-609 Code
    e0
  • ECCN Code
    EAR99
  • Terminal Finish
    Tin/Lead (Sn/Pb)
  • HTS Code
    8541.29.00.75
  • Subcategory
    Other Transistors
  • Terminal Position
    DUAL
  • Terminal Form
    GULL WING
  • Pin Count
    4
  • JESD-30 Code
    R-PDSO-G4
  • Qualification Status
    Not Qualified
  • Operating Temperature (Max)
    150°C
  • Number of Elements
    1
  • Configuration
    SINGLE
  • Operating Mode
    ENHANCEMENT MODE
  • Case Connection
    DRAIN
  • Polarity/Channel Type
    P-CHANNEL
  • Drain Current-Max (Abs) (ID)
    0.37A
  • Drain-source On Resistance-Max
    6Ohm
  • DS Breakdown Voltage-Min
    200V
  • FET Technology
    METAL-OXIDE SEMICONDUCTOR
  • Power Dissipation-Max (Abs)
    1.8W
  • RoHS Status
    Non-RoHS Compliant
Description
BSP317 Overview
This product is manufactured by SIEMENS and belongs to the category of Modules. The images we provide are for reference only, for detailed product information please see specification sheet BSP317 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of BSP317. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
BSP317 More Descriptions
Transistor PNP Field Effect BSP317 SIEMENS V=200 SOT223
Trans MOSFET P-CH 200V 0.37A 4-Pin(3 Tab) SOT-223
Power Field-Effect Transistor, 0.34A I(D), 200V, 6ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
Product Comparison
The three parts on the right have similar specifications to BSP317.
  • Image
    Part Number
    Manufacturer
    Surface Mount
    Number of Terminals
    Transistor Element Material
    JESD-609 Code
    ECCN Code
    Terminal Finish
    HTS Code
    Subcategory
    Terminal Position
    Terminal Form
    Pin Count
    JESD-30 Code
    Qualification Status
    Operating Temperature (Max)
    Number of Elements
    Configuration
    Operating Mode
    Case Connection
    Polarity/Channel Type
    Drain Current-Max (Abs) (ID)
    Drain-source On Resistance-Max
    DS Breakdown Voltage-Min
    FET Technology
    Power Dissipation-Max (Abs)
    RoHS Status
    Mounting Type
    Package / Case
    Operating Temperature
    Part Status
    Number of Terminations
    Technology
    Power Dissipation-Max
    FET Type
    Rds On (Max) @ Id, Vgs
    Current - Continuous Drain (Id) @ 25°C
    Drain to Source Voltage (Vdss)
    Pulsed Drain Current-Max (IDM)
    View Compare
  • BSP317
    BSP317
    YES
    4
    SILICON
    e0
    EAR99
    Tin/Lead (Sn/Pb)
    8541.29.00.75
    Other Transistors
    DUAL
    GULL WING
    4
    R-PDSO-G4
    Not Qualified
    150°C
    1
    SINGLE
    ENHANCEMENT MODE
    DRAIN
    P-CHANNEL
    0.37A
    6Ohm
    200V
    METAL-OXIDE SEMICONDUCTOR
    1.8W
    Non-RoHS Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • BSP319
    YES
    4
    SILICON
    -
    EAR99
    -
    8541.29.00.95
    -
    DUAL
    GULL WING
    4
    R-PDSO-G4
    Not Qualified
    -
    1
    SINGLE
    ENHANCEMENT MODE
    DRAIN
    N-CHANNEL
    3.8A
    0.07Ohm
    50V
    METAL-OXIDE SEMICONDUCTOR
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • BSP316
    YES
    4
    SILICON
    e0
    EAR99
    Tin/Lead (Sn/Pb)
    8541.29.00.75
    Other Transistors
    DUAL
    GULL WING
    4
    R-PDSO-G4
    Not Qualified
    150°C
    1
    SINGLE
    ENHANCEMENT MODE
    DRAIN
    P-CHANNEL
    0.65A
    2.2Ohm
    100V
    METAL-OXIDE SEMICONDUCTOR
    1.8W
    Non-RoHS Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • BSP315
    YES
    -
    SILICON
    -
    -
    -
    -
    -
    DUAL
    GULL WING
    -
    R-PDSO-G4
    COMMERCIAL
    -
    1
    SINGLE
    ENHANCEMENT MODE
    DRAIN
    -
    1A
    -
    50V
    -
    -
    ROHS3 Compliant
    Surface Mount
    TO-261-4, TO-261AA
    150°C
    Obsolete
    4
    MOSFET (Metal Oxide)
    1.8W
    P-Channel
    0.8 Ω
    1A
    50V
    4A
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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