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BSP318S More Descriptions
MOSFET SOT-223 N 60V 2.6 A
Mosfet, N Channel, 60V, 2.6A, Sot-223; Transistor Polarity:n Channel; Continuous Drain Current Id:2.6A; Drain Source Voltage Vds:60V; On Resistance Rds(On):0.07Ohm; Rds(On) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:1.6V Rohs Compliant: Yes
French Electronic Distributor since 1988
Mosfet, N Channel, 60V, 2.6A, Sot-223; Transistor Polarity:n Channel; Continuous Drain Current Id:2.6A; Drain Source Voltage Vds:60V; On Resistance Rds(On):0.07Ohm; Rds(On) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:1.6V Rohs Compliant: Yes
French Electronic Distributor since 1988
The three parts on the right have similar specifications to BSP318S.
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ImagePart NumberManufacturerSurface MountNumber of TerminalsTransistor Element MaterialECCN CodeHTS CodeTerminal PositionTerminal FormPin CountJESD-30 CodeQualification StatusNumber of ElementsConfigurationOperating ModeCase ConnectionPolarity/Channel TypeDrain Current-Max (Abs) (ID)Drain-source On Resistance-MaxDS Breakdown Voltage-MinFET TechnologyJESD-609 CodeTerminal FinishSubcategoryOperating Temperature (Max)Power Dissipation-Max (Abs)RoHS StatusMounting TypePackage / CaseOperating TemperaturePart StatusNumber of TerminationsTechnologyPower Dissipation-MaxFET TypeRds On (Max) @ Id, VgsCurrent - Continuous Drain (Id) @ 25°CDrain to Source Voltage (Vdss)Pulsed Drain Current-Max (IDM)View Compare
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BSP318S-------------------------------------- -
YES4SILICONEAR998541.29.00.95DUALGULL WING4R-PDSO-G4Not Qualified1SINGLEENHANCEMENT MODEDRAINN-CHANNEL3.8A0.07Ohm50VMETAL-OXIDE SEMICONDUCTOR------------------
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YES4SILICONEAR998541.29.00.75DUALGULL WING4R-PDSO-G4Not Qualified1SINGLEENHANCEMENT MODEDRAINP-CHANNEL0.65A2.2Ohm100VMETAL-OXIDE SEMICONDUCTORe0Tin/Lead (Sn/Pb)Other Transistors150°C1.8WNon-RoHS Compliant------------
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YES-SILICON--DUALGULL WING-R-PDSO-G4COMMERCIAL1SINGLEENHANCEMENT MODEDRAIN-1A-50V------ROHS3 CompliantSurface MountTO-261-4, TO-261AA150°CObsolete4MOSFET (Metal Oxide)1.8WP-Channel0.8 Ω1A50V4A
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