Nexperia USA Inc. BSP31,115

Name: BSP31,115
Brand: Nexperia USA Inc.
SKU: 2465433-BSP31,115
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: BSP31,115

Manufacturer:: Nexperia USA Inc.

Ventron No:: 2465433-BSP31,115

Description:: TRANS PNP 60V 1A SOT223

ECAD Model:

Datasheet:: BSP31(32,33)

Specifications

Nexperia USA Inc. BSP31,115 technical specifications, attributes, parameters and parts with similar specifications to Nexperia USA Inc. BSP31,115.

Factory Lead Time
4 Weeks
Contact Plating
Tin
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-261-4, TO-261AA
Number of Pins
4
Weight
4.535924g
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Published
2009
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
4
Termination
SMD/SMT
ECCN Code
EAR99
Max Power Dissipation
1.3W
Terminal Position
DUAL
Terminal Form
GULL WING
Frequency
100MHz
Base Part Number
BSP31
Pin Count
4
Number of Elements
1
Element Configuration
Single
Power Dissipation
1.3W
Case Connection
COLLECTOR
Gain Bandwidth Product
100MHz
Polarity/Channel Type
PNP
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
60V
Max Collector Current
1A
DC Current Gain (hFE) (Min) @ Ic, Vce
100 @ 100mA 5V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
500mV @ 50mA, 500mA
Collector Emitter Breakdown Voltage
60V
Transition Frequency
100MHz
Max Breakdown Voltage
60V
Collector Base Voltage (VCBO)
70V
Emitter Base Voltage (VEBO)
5V
hFE Min
100
Turn Off Time-Max (toff)
650ns
Turn On Time-Max (ton)
500ns
Collector-Base Capacitance-Max
20pF
Height
6.35mm
Length
6.35mm
Width
6.35mm
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

BSP31,115 Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 100 @ 100mA 5V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 500mV @ 50mA, 500mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Parts of this part have transition frequencies of 100MHz.Single BJT transistor can take a breakdown input voltage of 60V volts.During maximum operation, collector current can be as low as 1A volts.

BSP31,115 Features
the DC current gain for this device is 100 @ 100mA 5V
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
a transition frequency of 100MHz

BSP31,115 Applications
There are a lot of Nexperia USA Inc.
BSP31,115 applications of single BJT transistors.

Inverter
Interface
Driver
Muting

BSP31,115 More Descriptions

BSP31 Series 60 V 1 A SMT PNP Medium Power Transistor - SOT-223
Trans GP BJT PNP 60V 1A 1300mW Automotive 4-Pin(3 Tab) SC-73 T/R
TRANS PNP 60V 1A SOT-223; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-60V; Transition Frequency Typ ft:100MHz; Power Dissipation Pd:1.3W; DC Collector Current:-1A; DC Current Gain hFE:100; Operating Temperature Range:-65°C to 150°C; Transistor Case Style:SOT-223; No. of Pins:4; SVHC:No SVHC (20-Jun-2011); Collector Emitter Voltage Vces:-250mV; Current Ic Continuous a Max:-150mA; Gain Bandwidth ft Typ:100MHz; Hfe Min:100; Package / Case:SOT-223; Power Dissipation Pd:1.3W; Termination Type:SMD; Transistor Type:Power Bipolar

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