Infineon Technologies BSP 52 E6327

Name: BSP 52 E6327
Brand: Infineon Technologies
SKU: 2464438-BSP 52 E6327
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: BSP 52 E6327

Manufacturer:: Infineon Technologies

Ventron No:: 2464438-BSP 52 E6327

Description:: TRANS NPN DARL 80V 1A SOT-223

ECAD Model:

Datasheet:: BSP 52 E6327

Specifications

Infineon Technologies BSP 52 E6327 technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies BSP 52 E6327.

Mounting Type
Surface Mount
Package / Case
TO-261-4, TO-261AA
Surface Mount
YES
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Published
2011
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
4
ECCN Code
EAR99
Terminal Finish
MATTE TIN
Subcategory
Other Transistors
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Reach Compliance Code
compliant
Time@Peak Reflow Temperature-Max (s)
40
Base Part Number
BSP52
JESD-30 Code
R-PDSO-G4
Qualification Status
Not Qualified
Number of Elements
1
Case Connection
COLLECTOR
Power - Max
1.5W
Polarity/Channel Type
NPN
Transistor Type
NPN - Darlington
DC Current Gain (hFE) (Min) @ Ic, Vce
2000 @ 500mA 10V
Current - Collector Cutoff (Max)
10μA
Vce Saturation (Max) @ Ib, Ic
1.8V @ 1mA, 1A
Voltage - Collector Emitter Breakdown (Max)
80V
Current - Collector (Ic) (Max)
1A
Transition Frequency
200MHz
Frequency - Transition
200MHz
Power Dissipation-Max (Abs)
1.5W
Turn Off Time-Max (toff)
1500ns
Turn On Time-Max (ton)
400ns
RoHS Status
RoHS Compliant

Description

BSP 52 E6327 Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 2000 @ 500mA 10V.When VCE saturation is 1.8V @ 1mA, 1A, transistor means Ic has reached transistors maximum value (saturated).In the part, the transition frequency is 200MHz.The device has a 80V maximal voltage - Collector Emitter Breakdown.

BSP 52 E6327 Features
the DC current gain for this device is 2000 @ 500mA 10V
the vce saturation(Max) is 1.8V @ 1mA, 1A
a transition frequency of 200MHz

BSP 52 E6327 Applications
There are a lot of Infineon Technologies
BSP 52 E6327 applications of single BJT transistors.

Inverter
Interface
Driver
Muting

BSP 52 E6327 More Descriptions

Small Signal Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon
Compliant Surface Mount 1000 NPN Lead Free Tape & Reel (TR) SOT-223 1 A
TRANS NPN DARL 80V 1A SOT223-4

Certification