BSM75GB170DN2HOSA1

Infineon Technologies BSM75GB170DN2HOSA1

Part Number:
BSM75GB170DN2HOSA1
Manufacturer:
Infineon Technologies
Ventron No:
2492975-BSM75GB170DN2HOSA1
Description:
IGBT 1700V 110A 625W MODULE
ECAD Model:
Datasheet:
BSM75GB170DN2

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Specifications
Infineon Technologies BSM75GB170DN2HOSA1 technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies BSM75GB170DN2HOSA1.
  • Mount
    Chassis Mount, Screw
  • Mounting Type
    Chassis Mount
  • Package / Case
    Module
  • Number of Pins
    34
  • Transistor Element Material
    SILICON
  • Operating Temperature
    150°C TJ
  • Published
    1999
  • Pbfree Code
    no
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    7
  • ECCN Code
    EAR99
  • Max Power Dissipation
    625W
  • Terminal Position
    UPPER
  • Terminal Form
    UNSPECIFIED
  • Pin Count
    7
  • JESD-30 Code
    R-XUFM-X7
  • Number of Elements
    2
  • Configuration
    Half Bridge
  • Element Configuration
    Dual
  • Case Connection
    ISOLATED
  • Power - Max
    625W
  • Transistor Application
    POWER CONTROL
  • Halogen Free
    Not Halogen Free
  • Polarity/Channel Type
    N-CHANNEL
  • Input
    Standard
  • Collector Emitter Voltage (VCEO)
    3.9V
  • Max Collector Current
    110A
  • Collector Emitter Breakdown Voltage
    1.7kV
  • Voltage - Collector Emitter Breakdown (Max)
    1700V
  • Input Capacitance
    11nF
  • Turn On Time
    550 ns
  • Vce(on) (Max) @ Vge, Ic
    3.9V @ 15V, 75A
  • Turn Off Time-Nom (toff)
    740 ns
  • NTC Thermistor
    No
  • Input Capacitance (Cies) @ Vce
    11nF @ 25V
  • RoHS Status
    RoHS Compliant
  • Lead Free
    Lead Free
Description
BSM75GB170DN2HOSA1 Description
BSM75GB170DN2HOSA1 developed by Infineon Technologies is a type of  IGBT module which is a modular semiconductor product which is packaged by IGBT (insulated gate bipolar transistor chip) and FWD (freewheeling diode chip) through a specific circuit bridge; the packaged IGBT module is directly used in frequency converters, UPS uninterrupted power supply and other equipment. It is characterized by energy saving, convenient installation and maintenance, and stable heat dissipation.

BSM75GB170DN2HOSA1 Features
Energy saving Convenient installation Convenient maintenance Stable heat dissipation

BSM75GB170DN2HOSA1 Applications
Rail transit Smart grid Aerospace Electric vehicles  New energy equipment
BSM75GB170DN2HOSA1 More Descriptions
Trans IGBT Module N-CH 1.7KV 110A 7-Pin
IGBT, 110A I(C), 1700V V(BR)CES,
CAP CER 6.7PF 25V C0G/NP0 01005
Our well-known 34 mm 1700V dual IGBT modules with IGBT2 are the right choice for your design. | Summary of Features: Superior solution for frequency controlled inverter drives; UL/CSA Certification with UL1557 E83336; Operating temperature up to 150 C; Optimized switching characteristic like softness and reduced switching losses; Existing packages with higher current capability; RoHS compliant | Benefits: Flexibility; Optimal electrical performance; Highest reliability | Target Applications: drives; wind; solar; traction
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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