Ampleon USA Inc. BLF188XRU

Ampleon Transistors - FETs, MOSFETs - RF BLF188XRU is a high-performance RF FET (Field Effect Transistor) based on LDMOS (Laterally Diffused Metal Oxide Semiconductor) technology. It is designed for use in high-power, high-frequency applications such as cellular base stations, broadcast transmitters, and industrial and medical equipment. This device has a maximum drain voltage of 135V and a maximum drain-source breakdown voltage of 24.4dB. It is available in a SOT539A package, which is a surface-mount package with a small footprint.

Features of the Ampleon Transistors - FETs, MOSFETs - RF BLF188XRU include high power handling capability, low thermal resistance, and high efficiency. It also has a low gate-source capacitance, which helps reduce power consumption. Additionally, it has a low gate-drain capacitance, which helps reduce distortion.

Applications of the Ampleon Transistors - FETs, MOSFETs - RF BLF188XRU include cellular base stations, broadcast transmitters, and industrial and medical equipment. It can also be used in high-power, high-frequency applications such as RF amplifiers, power amplifiers, and RF switches.