Fairchild/ON Semiconductor BF245B
- Part Number:
- BF245B
- Manufacturer:
- Fairchild/ON Semiconductor
- Ventron No:
- 2476034-BF245B
- Description:
- JFET N-CH 30V 15MA TO92
- Datasheet:
- BF245A,B,C
Fairchild/ON Semiconductor BF245B technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor BF245B.
- Lifecycle StatusLAST SHIPMENTS (Last Updated: 1 week ago)
- MountThrough Hole
- Package / CaseTO-226-3, TO-92-3 (TO-226AA)
- Number of Pins3
- Weight200mg
- PackagingBulk
- Published2009
- JESD-609 Codee0
- Pbfree Codeno
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishTin/Lead (Sn/Pb)
- Max Operating Temperature150°C
- Min Operating Temperature-55°C
- HTS Code8541.21.00.75
- SubcategoryOther Transistors
- Voltage - Rated DC30V
- Current Rating (Amps)100mA
- Max Power Dissipation350mW
- Terminal PositionBOTTOM
- Peak Reflow Temperature (Cel)240
- Reach Compliance Codenot_compliant
- Current Rating10mA
- Time@Peak Reflow Temperature-Max (s)30
- Base Part NumberBF245
- Pin Count3
- Qualification StatusNot Qualified
- Number of Elements1
- Element ConfigurationSingle
- Operating ModeDEPLETION MODE
- Power Dissipation350mW
- Transistor ApplicationAMPLIFIER
- Breakdown Voltage-30V
- Drain to Source Voltage (Vdss)15V
- Transistor TypeN-Channel JFET
- Continuous Drain Current (ID)15mA
- Gate to Source Voltage (Vgs)-30V
- Drain Current-Max (Abs) (ID)0.1A
- Drain to Source Breakdown Voltage30V
- FET TechnologyJUNCTION
- Highest Frequency BandULTRA HIGH FREQUENCY B
- Height4.58mm
- Length4.58mm
- Width3.86mm
- RoHS StatusNon-RoHS Compliant
- Lead FreeLead Free
BF245B Description
BF245B N-channel amplifier which is in low voltage multi epitaxial planar technology. ON Semiconductor BF245B is designed for general purpose amplifier and switching applications. BF245B amplifier is suitable for speed control of motors, inverter and other rectifier circuits, low collector-emitter saturation voltage, as well as fast switching speed.
BF245B Features
High Current Gain Bandwidth Product
Compact TO-220 AB Package
Pb-Free Packages are Available
BF245B Applications
Speed control of Motors
Inverter and other rectifier circuits
Low collector-emitter saturation voltage
Fast switching speed
BF245B More Descriptions
N-Channel Amplifiers / JFET N-CH 30V 15MA TO92
RF JFET; Transistor Polarity:N Channel; Continuous Drain Current, Id:15mA; Power Dissipation, Pd:0.350W; Package/Case:TO-92; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes; Breakdown Voltage, V(br)gss:-30V ;RoHS Compliant: Yes
TRANSISTOR, JFET, N, TO-92; Transistor Type:JFET; Breakdown Voltage Vbr:-30V; Zero Gate Voltage Drain Current Idss:6mA to 15mA; Gate-Source Cutoff Voltage Vgs(off) Max:8V; Power Dissipation Pd:350mW; Transistor Case Style:TO-92; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Application Code:HFA; Current Idss Max:15mA; Current Idss Min:6mA; Current Ig:10mA; Device Marking:BF245B; Drain Source Voltage Vds:30V; Forward Transconductance Gfs Max:6.5mA/V; Full Power Rating Temperature:25°C; Gfs Min:3mA/V; No. of Transistors:1; Package / Case:TO-92; Pin Configuration:r; Pin Format:r; Power Dissipation Pd:350mW; Power Dissipation Ptot Max:350mW; Termination Type:Through Hole; Transistor Polarity:N Channel
RF JFET; Transistor Polarity:N Channel; Continuous Drain Current, Id:15mA; Power Dissipation, Pd:0.350W; Package/Case:TO-92; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes; Breakdown Voltage, V(br)gss:-30V ;RoHS Compliant: Yes
TRANSISTOR, JFET, N, TO-92; Transistor Type:JFET; Breakdown Voltage Vbr:-30V; Zero Gate Voltage Drain Current Idss:6mA to 15mA; Gate-Source Cutoff Voltage Vgs(off) Max:8V; Power Dissipation Pd:350mW; Transistor Case Style:TO-92; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Application Code:HFA; Current Idss Max:15mA; Current Idss Min:6mA; Current Ig:10mA; Device Marking:BF245B; Drain Source Voltage Vds:30V; Forward Transconductance Gfs Max:6.5mA/V; Full Power Rating Temperature:25°C; Gfs Min:3mA/V; No. of Transistors:1; Package / Case:TO-92; Pin Configuration:r; Pin Format:r; Power Dissipation Pd:350mW; Power Dissipation Ptot Max:350mW; Termination Type:Through Hole; Transistor Polarity:N Channel
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