BF245B

Fairchild/ON Semiconductor BF245B

Part Number:
BF245B
Manufacturer:
Fairchild/ON Semiconductor
Ventron No:
2476034-BF245B
Description:
JFET N-CH 30V 15MA TO92
ECAD Model:
Datasheet:
BF245A,B,C

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Specifications
Fairchild/ON Semiconductor BF245B technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor BF245B.
  • Lifecycle Status
    LAST SHIPMENTS (Last Updated: 1 week ago)
  • Mount
    Through Hole
  • Package / Case
    TO-226-3, TO-92-3 (TO-226AA)
  • Number of Pins
    3
  • Weight
    200mg
  • Packaging
    Bulk
  • Published
    2009
  • JESD-609 Code
    e0
  • Pbfree Code
    no
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • ECCN Code
    EAR99
  • Terminal Finish
    Tin/Lead (Sn/Pb)
  • Max Operating Temperature
    150°C
  • Min Operating Temperature
    -55°C
  • HTS Code
    8541.21.00.75
  • Subcategory
    Other Transistors
  • Voltage - Rated DC
    30V
  • Current Rating (Amps)
    100mA
  • Max Power Dissipation
    350mW
  • Terminal Position
    BOTTOM
  • Peak Reflow Temperature (Cel)
    240
  • Reach Compliance Code
    not_compliant
  • Current Rating
    10mA
  • Time@Peak Reflow Temperature-Max (s)
    30
  • Base Part Number
    BF245
  • Pin Count
    3
  • Qualification Status
    Not Qualified
  • Number of Elements
    1
  • Element Configuration
    Single
  • Operating Mode
    DEPLETION MODE
  • Power Dissipation
    350mW
  • Transistor Application
    AMPLIFIER
  • Breakdown Voltage
    -30V
  • Drain to Source Voltage (Vdss)
    15V
  • Transistor Type
    N-Channel JFET
  • Continuous Drain Current (ID)
    15mA
  • Gate to Source Voltage (Vgs)
    -30V
  • Drain Current-Max (Abs) (ID)
    0.1A
  • Drain to Source Breakdown Voltage
    30V
  • FET Technology
    JUNCTION
  • Highest Frequency Band
    ULTRA HIGH FREQUENCY B
  • Height
    4.58mm
  • Length
    4.58mm
  • Width
    3.86mm
  • RoHS Status
    Non-RoHS Compliant
  • Lead Free
    Lead Free
Description
BF245B Description   BF245B N-channel amplifier which is in low voltage multi epitaxial planar technology. ON Semiconductor BF245B is designed for general purpose amplifier and switching applications. BF245B amplifier is suitable for speed control of motors, inverter and other rectifier circuits, low collector-emitter saturation voltage, as well as fast switching speed.     BF245B Features   High Current Gain Bandwidth Product Compact TO-220 AB Package Pb-Free Packages are Available     BF245B Applications   Speed control of Motors Inverter and other rectifier circuits Low collector-emitter saturation voltage Fast switching speed  
BF245B More Descriptions
N-Channel Amplifiers / JFET N-CH 30V 15MA TO92
RF JFET; Transistor Polarity:N Channel; Continuous Drain Current, Id:15mA; Power Dissipation, Pd:0.350W; Package/Case:TO-92; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes; Breakdown Voltage, V(br)gss:-30V ;RoHS Compliant: Yes
TRANSISTOR, JFET, N, TO-92; Transistor Type:JFET; Breakdown Voltage Vbr:-30V; Zero Gate Voltage Drain Current Idss:6mA to 15mA; Gate-Source Cutoff Voltage Vgs(off) Max:8V; Power Dissipation Pd:350mW; Transistor Case Style:TO-92; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Application Code:HFA; Current Idss Max:15mA; Current Idss Min:6mA; Current Ig:10mA; Device Marking:BF245B; Drain Source Voltage Vds:30V; Forward Transconductance Gfs Max:6.5mA/V; Full Power Rating Temperature:25°C; Gfs Min:3mA/V; No. of Transistors:1; Package / Case:TO-92; Pin Configuration:r; Pin Format:r; Power Dissipation Pd:350mW; Power Dissipation Ptot Max:350mW; Termination Type:Through Hole; Transistor Polarity:N Channel
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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