Fairchild/ON Semiconductor BDX34C
- Part Number:
- BDX34C
- Manufacturer:
- Fairchild/ON Semiconductor
- Ventron No:
- 2465546-BDX34C
- Description:
- TRANS PNP 100V 10A TO-220
- Datasheet:
- TO220B03 Pkg Drawing
Fairchild/ON Semiconductor BDX34C technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor BDX34C.
- Mounting TypeThrough Hole
- Package / CaseTO-220-3
- Surface MountNO
- Transistor Element MaterialSILICON
- Operating Temperature150°C TJ
- PackagingTube
- Published2000
- JESD-609 Codee0
- Pbfree Codeno
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- Terminal FinishTIN LEAD
- Terminal PositionSINGLE
- Peak Reflow Temperature (Cel)240
- Reach Compliance Codeunknown
- Time@Peak Reflow Temperature-Max (s)30
- Pin Count3
- JESD-30 CodeR-PSFM-T3
- Qualification StatusCOMMERCIAL
- Number of Elements1
- Power - Max70W
- Transistor ApplicationSWITCHING
- Polarity/Channel TypePNP
- Transistor TypePNP - Darlington
- DC Current Gain (hFE) (Min) @ Ic, Vce750 @ 3A 3V
- Current - Collector Cutoff (Max)500μA
- JEDEC-95 CodeTO-220AB
- Vce Saturation (Max) @ Ib, Ic2.5V @ 6mA, 3A
- Voltage - Collector Emitter Breakdown (Max)100V
- Current - Collector (Ic) (Max)10A
- RoHS StatusROHS3 Compliant
BDX34C Overview
DC current gain in this device equals 750 @ 3A 3V, which is the ratio of the base current to the collector current.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 2.5V @ 6mA, 3A.A negative maximal voltage - Collector Emitter Breakdown can be observed in the device.
BDX34C Features
the DC current gain for this device is 750 @ 3A 3V
the vce saturation(Max) is 2.5V @ 6mA, 3A
BDX34C Applications
There are a lot of Rochester Electronics, LLC
BDX34C applications of single BJT transistors.
Inverter
Interface
Driver
Muting
DC current gain in this device equals 750 @ 3A 3V, which is the ratio of the base current to the collector current.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 2.5V @ 6mA, 3A.A negative maximal voltage - Collector Emitter Breakdown can be observed in the device.
BDX34C Features
the DC current gain for this device is 750 @ 3A 3V
the vce saturation(Max) is 2.5V @ 6mA, 3A
BDX34C Applications
There are a lot of Rochester Electronics, LLC
BDX34C applications of single BJT transistors.
Inverter
Interface
Driver
Muting
BDX34C More Descriptions
Power Bipolar Transistor, 10A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
Trans Darlington PNP 100V 10A 70000mW 3-Pin(3 Tab) TO-220AB Tube
Bipolar (Bjt) Single Transistor, Darlington, Pnp, 100 V, 70 W, 10 A, 750 Rohs Compliant: Yes |Stmicroelectronics BDX34C
BDX Series 100 V 10 A Darlington Complementary Silicon Power Transistor TO-220AB
DARLINGTON TRANSISTOR, TO-220; Transistor Polarity: PNP; Collector Emitter Voltage V(br)ceo: 100V; Transition Frequency ft: -; Power Dissipation Pd: 70W; DC Collector Current: 10A; DC Current Gain hFE: 750hFE; Transistor Case
Trans Darlington PNP 100V 10A 70000mW 3-Pin(3 Tab) TO-220AB Tube
Bipolar (Bjt) Single Transistor, Darlington, Pnp, 100 V, 70 W, 10 A, 750 Rohs Compliant: Yes |Stmicroelectronics BDX34C
BDX Series 100 V 10 A Darlington Complementary Silicon Power Transistor TO-220AB
DARLINGTON TRANSISTOR, TO-220; Transistor Polarity: PNP; Collector Emitter Voltage V(br)ceo: 100V; Transition Frequency ft: -; Power Dissipation Pd: 70W; DC Collector Current: 10A; DC Current Gain hFE: 750hFE; Transistor Case
The three parts on the right have similar specifications to BDX34C.
-
ImagePart NumberManufacturerMounting TypePackage / CaseSurface MountTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsTerminal FinishTerminal PositionPeak Reflow Temperature (Cel)Reach Compliance CodeTime@Peak Reflow Temperature-Max (s)Pin CountJESD-30 CodeQualification StatusNumber of ElementsPower - MaxTransistor ApplicationPolarity/Channel TypeTransistor TypeDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)JEDEC-95 CodeVce Saturation (Max) @ Ib, IcVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)RoHS StatusSupplier Device PackageVoltage - Collector Emitter Breakdown (Max):Vce Saturation (Max) @ Ib, Ic:Transistor Type:Supplier Device Package:Series:Power - Max:Packaging:Package / Case:Operating Temperature:Mounting Type:Frequency - Transition:DC Current Gain (hFE) (Min) @ Ic, Vce:Current - Collector Cutoff (Max):Current - Collector (Ic) (Max):View Compare
-
BDX34CThrough HoleTO-220-3NOSILICON150°C TJTube2000e0noObsolete1 (Unlimited)3TIN LEADSINGLE240unknown303R-PSFM-T3COMMERCIAL170WSWITCHINGPNPPNP - Darlington750 @ 3A 3V500μATO-220AB2.5V @ 6mA, 3A100V10AROHS3 Compliant----------------
-
Through HoleTO-220-3--150°C TJBulk---Obsolete1 (Unlimited)----------70W--PNP750 @ 4A 3V500μA-2.5V @ 8mA, 4A60V10AROHS3 CompliantTO-220-3--------------
-
---------------------------------100V2.5V @ 6mA, 3ANPN - DarlingtonTO-220AB-70WTubeTO-220-3150°C (TJ)Through Hole-750 @ 3A, 3V500µA10A
-
---------------------------------80V2.5V @ 6mA, 3ANPN - DarlingtonTO-220AB-70WTubeTO-220-3-65°C ~ 150°C (TJ)Through Hole-750 @ 3A, 3V500µA10A
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