ON Semiconductor BDX34B
- Part Number:
- BDX34B
- Manufacturer:
- ON Semiconductor
- Ventron No:
- 2472347-BDX34B
- Description:
- TRANS PNP DARL 80V 10A TO-220AB
- Datasheet:
- TO220B03 Pkg Drawing
ON Semiconductor BDX34B technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor BDX34B.
- Voltage - Collector Emitter Breakdown (Max):80V
- Vce Saturation (Max) @ Ib, Ic:2.5V @ 6mA, 3A
- Transistor Type:PNP - Darlington
- Supplier Device Package:TO-220AB
- Series:-
- Power - Max:70W
- Packaging:Tube
- Package / Case:TO-220-3
- Operating Temperature:-65°C ~ 150°C (TJ)
- Mounting Type:Through Hole
- Frequency - Transition:-
- DC Current Gain (hFE) (Min) @ Ic, Vce:750 @ 3A, 3V
- Current - Collector Cutoff (Max):500µA
- Current - Collector (Ic) (Max):10A
The BDX34B is TRANS PNP DARL 80V 10A TO-220AB , it is part of - series. they are designed to work as Transistors - Bipolar (BJT) - Single.BDX34B with pin details manufactured by AMI Semiconductor / ON Semiconductor. The BDX34B is available in TO-220AB Package,it is part of the electronic component Chips.that includes - Series. they are designed to operate as Transistors - Bipolar (BJT) - Single.it is with Operating Temperature -65°C ~ 150°C (TJ).BDX34B with original stock manufactured by AMI Semiconductor / ON Semiconductor. The BDX34B is available in TO-220AB Package.Generally IC chips offer Mounting Style features such as SMD/SMT, Package Case of BDX34Bis designed to work in TO-220-3, it's Operating Temperature is -65°C ~ 150°C (TJ).The BDX34B is available in TO-220-3 Package, is part of the Transistors - Bipolar (BJT) - Single and belong to Discrete Semiconductor Products.BDX34B with EDA / CAD Models manufactured by AMI Semiconductor / ON Semiconductor. The BDX34B is available in TO-220ABPackage, is part of the Discrete Semiconductor Products.The BDX34B is Transistors - Bipolar (BJT) - Single with package TO-220-3 manufactured by AMI Semiconductor / ON Semiconductor. The BDX34B is available in TO-220AB Package, is part of the TRANS PNP DARL 80V 10A TO-220AB.
BDX34B More Descriptions
Tube Through Hole PNP - Darlington Single Bipolar (BJT) Transistor 750 @ 3A 3V -10A 70W 3MHz
10 A, 80 V PNP Darlington Bipolar Power Transistor
Power Bipolar Transistor, 10A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
Trans Darlington PNP 80V 10A 3-Pin(3 Tab) TO-220AB Bulk
10 A, 80 V PNP Darlington Bipolar Power Transistor
Power Bipolar Transistor, 10A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
Trans Darlington PNP 80V 10A 3-Pin(3 Tab) TO-220AB Bulk
The three parts on the right have similar specifications to BDX34B.
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ImagePart NumberManufacturerVoltage - Collector Emitter Breakdown (Max):Vce Saturation (Max) @ Ib, Ic:Transistor Type:Supplier Device Package:Series:Power - Max:Packaging:Package / Case:Operating Temperature:Mounting Type:Frequency - Transition:DC Current Gain (hFE) (Min) @ Ic, Vce:Current - Collector Cutoff (Max):Current - Collector (Ic) (Max):Lifecycle StatusFactory Lead TimeContact PlatingMounting TypePackage / CaseSurface MountNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeAdditional FeatureSubcategoryVoltage - Rated DCMax Power DissipationPeak Reflow Temperature (Cel)Current RatingTime@Peak Reflow Temperature-Max (s)Base Part NumberPin CountNumber of ElementsPolarityElement ConfigurationPower DissipationCase ConnectionTransistor ApplicationTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)JEDEC-95 CodeVce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageTransition FrequencyCollector Emitter Saturation VoltageCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)hFE MinContinuous Collector CurrentHeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeView Compare
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BDX34B80V2.5V @ 6mA, 3APNP - DarlingtonTO-220AB-70WTubeTO-220-3-65°C ~ 150°C (TJ)Through Hole-750 @ 3A, 3V500µA10A-------------------------------------------------------
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100V2.5V @ 6mA, 3ANPN - DarlingtonTO-220AB-70WTubeTO-220-3150°C (TJ)Through Hole-750 @ 3A, 3V500µA10A------------------------------------------------------
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--------------ACTIVE (Last Updated: 1 day ago)5 WeeksTinThrough HoleTO-220-3NO36.000006gSILICON-65°C~150°C TJTube2006e3yesActive1 (Unlimited)3EAR99LEADFORM OPTIONS ARE AVAILABLEOther Transistors100V70W26010A40BDX3331NPNSingle70WCOLLECTORSWITCHINGNPN - Darlington100V10A750 @ 3A 3V500μATO-220AB2.5V @ 6mA, 3A100V3MHz2.5V100V5V7504A15.75mm10.53mm4.83mmNo SVHCNoROHS3 CompliantLead Free
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80V2.5V @ 6mA, 3ANPN - DarlingtonTO-220AB-70WTubeTO-220-3-65°C ~ 150°C (TJ)Through Hole-750 @ 3A, 3V500µA10A------------------------------------------------------
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