Fairchild/ON Semiconductor BDX34B
- Part Number:
- BDX34B
- Manufacturer:
- Fairchild/ON Semiconductor
- Ventron No:
- 2466155-BDX34B
- Description:
- TRANS PNP 80V 10A TO-220
- Datasheet:
- TO220B03 Pkg Drawing
Fairchild/ON Semiconductor BDX34B technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor BDX34B.
- Mounting TypeThrough Hole
- Package / CaseTO-220-3
- Surface MountNO
- Transistor Element MaterialSILICON
- Operating Temperature-65°C~150°C TJ
- PackagingTube
- JESD-609 Codee0
- Pbfree Codeno
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- Terminal FinishTIN LEAD
- Additional FeatureLEADFORM OPTIONS ARE AVAILABLE
- Terminal PositionSINGLE
- Peak Reflow Temperature (Cel)240
- Reach Compliance Codeunknown
- Time@Peak Reflow Temperature-Max (s)30
- Pin Count3
- JESD-30 CodeR-PSFM-T3
- Qualification StatusCOMMERCIAL
- Number of Elements1
- ConfigurationDARLINGTON WITH BUILT-IN DIODE AND RESISTOR
- Case ConnectionCOLLECTOR
- Power - Max70W
- Transistor ApplicationSWITCHING
- Polarity/Channel TypePNP
- Transistor TypePNP - Darlington
- DC Current Gain (hFE) (Min) @ Ic, Vce750 @ 3A 3V
- Current - Collector Cutoff (Max)500μA
- JEDEC-95 CodeTO-220AB
- Vce Saturation (Max) @ Ib, Ic2.5V @ 6mA, 3A
- Voltage - Collector Emitter Breakdown (Max)80V
- Current - Collector (Ic) (Max)10A
- Transition Frequency3MHz
- RoHS StatusROHS3 Compliant
BDX34B Overview
This device has a DC current gain of 750 @ 3A 3V, which is the ratio between the collector current and the base current.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).In this part, there is a transition frequency of 3MHz.Detection of Collector Emitter Breakdown at 80V maximal voltage is present.
BDX34B Features
the DC current gain for this device is 750 @ 3A 3V
the vce saturation(Max) is 2.5V @ 6mA, 3A
a transition frequency of 3MHz
BDX34B Applications
There are a lot of Rochester Electronics, LLC
BDX34B applications of single BJT transistors.
Inverter
Interface
Driver
Muting
This device has a DC current gain of 750 @ 3A 3V, which is the ratio between the collector current and the base current.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).In this part, there is a transition frequency of 3MHz.Detection of Collector Emitter Breakdown at 80V maximal voltage is present.
BDX34B Features
the DC current gain for this device is 750 @ 3A 3V
the vce saturation(Max) is 2.5V @ 6mA, 3A
a transition frequency of 3MHz
BDX34B Applications
There are a lot of Rochester Electronics, LLC
BDX34B applications of single BJT transistors.
Inverter
Interface
Driver
Muting
BDX34B More Descriptions
Tube Through Hole PNP - Darlington Single Bipolar (BJT) Transistor 750 @ 3A 3V -10A 70W 3MHz
10 A, 80 V PNP Darlington Bipolar Power Transistor
Power Bipolar Transistor, 10A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
Trans Darlington PNP 80V 10A 3-Pin(3 Tab) TO-220AB Bulk
10 A, 80 V PNP Darlington Bipolar Power Transistor
Power Bipolar Transistor, 10A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
Trans Darlington PNP 80V 10A 3-Pin(3 Tab) TO-220AB Bulk
The three parts on the right have similar specifications to BDX34B.
-
ImagePart NumberManufacturerMounting TypePackage / CaseSurface MountTransistor Element MaterialOperating TemperaturePackagingJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsTerminal FinishAdditional FeatureTerminal PositionPeak Reflow Temperature (Cel)Reach Compliance CodeTime@Peak Reflow Temperature-Max (s)Pin CountJESD-30 CodeQualification StatusNumber of ElementsConfigurationCase ConnectionPower - MaxTransistor ApplicationPolarity/Channel TypeTransistor TypeDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)JEDEC-95 CodeVce Saturation (Max) @ Ib, IcVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)Transition FrequencyRoHS StatusVoltage - Collector Emitter Breakdown (Max):Vce Saturation (Max) @ Ib, Ic:Transistor Type:Supplier Device Package:Series:Power - Max:Packaging:Package / Case:Operating Temperature:Mounting Type:Frequency - Transition:DC Current Gain (hFE) (Min) @ Ic, Vce:Current - Collector Cutoff (Max):Current - Collector (Ic) (Max):Lifecycle StatusFactory Lead TimeContact PlatingNumber of PinsWeightPublishedECCN CodeSubcategoryVoltage - Rated DCMax Power DissipationCurrent RatingBase Part NumberPolarityElement ConfigurationPower DissipationCollector Emitter Voltage (VCEO)Max Collector CurrentCollector Emitter Breakdown VoltageCollector Emitter Saturation VoltageCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)hFE MinContinuous Collector CurrentHeightLengthWidthREACH SVHCRadiation HardeningLead FreeView Compare
-
BDX34BThrough HoleTO-220-3NOSILICON-65°C~150°C TJTubee0noObsolete1 (Unlimited)3TIN LEADLEADFORM OPTIONS ARE AVAILABLESINGLE240unknown303R-PSFM-T3COMMERCIAL1DARLINGTON WITH BUILT-IN DIODE AND RESISTORCOLLECTOR70WSWITCHINGPNPPNP - Darlington750 @ 3A 3V500μATO-220AB2.5V @ 6mA, 3A80V10A3MHzROHS3 Compliant--------------------------------------------
-
-----------------------------------100V2.5V @ 6mA, 3ANPN - DarlingtonTO-220AB-70WTubeTO-220-3150°C (TJ)Through Hole-750 @ 3A, 3V500µA10A-----------------------------
-
Through HoleTO-220-3NOSILICON-65°C~150°C TJTubee3yesActive1 (Unlimited)3-LEADFORM OPTIONS ARE AVAILABLE-260-403--1-COLLECTOR-SWITCHING-NPN - Darlington750 @ 3A 3V500μATO-220AB2.5V @ 6mA, 3A--3MHzROHS3 Compliant--------------ACTIVE (Last Updated: 1 day ago)5 WeeksTin36.000006g2006EAR99Other Transistors100V70W10ABDX33NPNSingle70W100V10A100V2.5V100V5V7504A15.75mm10.53mm4.83mmNo SVHCNoLead Free
-
-----------------------------------100V2.5V @ 6mA, 3APNP - DarlingtonTO-220AB-70WTubeTO-220-3-65°C ~ 150°C (TJ)Through Hole-750 @ 3A, 3V500µA10A-----------------------------
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