BDX33C

Fairchild/ON Semiconductor BDX33C

Part Number:
BDX33C
Manufacturer:
Fairchild/ON Semiconductor
Ventron No:
2463359-BDX33C
Description:
TRANS NPN 100V 10A TO-220
ECAD Model:
Datasheet:
TO220B03 Pkg Drawing

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Specifications
Fairchild/ON Semiconductor BDX33C technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor BDX33C.
  • Lifecycle Status
    ACTIVE (Last Updated: 7 months ago)
  • Factory Lead Time
    8 Weeks
  • Contact Plating
    Tin
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    TO-220-3
  • Number of Pins
    2
  • Transistor Element Material
    SILICON
  • Operating Temperature
    150°C TJ
  • Packaging
    Tube
  • JESD-609 Code
    e3
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • ECCN Code
    EAR99
  • Subcategory
    Other Transistors
  • Max Power Dissipation
    70W
  • Base Part Number
    BDX33
  • Pin Count
    3
  • JESD-30 Code
    R-PSFM-T3
  • Number of Elements
    1
  • Polarity
    NPN
  • Element Configuration
    Single
  • Power Dissipation
    70W
  • Transistor Application
    SWITCHING
  • Transistor Type
    NPN - Darlington
  • Collector Emitter Voltage (VCEO)
    100V
  • Max Collector Current
    10A
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    750 @ 3A 3V
  • Current - Collector Cutoff (Max)
    500μA
  • Vce Saturation (Max) @ Ib, Ic
    2.5V @ 6mA, 3A
  • Collector Emitter Breakdown Voltage
    100V
  • Transition Frequency
    3MHz
  • Collector Emitter Saturation Voltage
    2.5V
  • Collector Base Voltage (VCBO)
    100V
  • hFE Min
    750
  • Height
    9.15mm
  • Length
    10.4mm
  • Width
    4.6mm
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
BDX33C Overview
This device has a DC current gain of 750 @ 3A 3V, which is the ratio between the collector current and the base current.A collector emitter saturation voltage of 2.5V allows maximum design flexibility.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).In this part, there is a transition frequency of 3MHz.The maximum collector current is 10A volts.

BDX33C Features
the DC current gain for this device is 750 @ 3A 3V
a collector emitter saturation voltage of 2.5V
the vce saturation(Max) is 2.5V @ 6mA, 3A
a transition frequency of 3MHz


BDX33C Applications
There are a lot of STMicroelectronics
BDX33C applications of single BJT transistors.


Inverter
Interface
Driver
Muting
BDX33C More Descriptions
Bipolar junction transistor, NPN, 10 A, 100 V, THT, TO-220, BDX33C
BDX33C Series 100 V 10 A Through Hole NPN Darlington Transistor - TO-220-3
Power Bipolar Transistor, 10A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
Trans Darlington NPN 100V 10A 3-Pin(3 Tab) TO-220 Tube - Rail/Tube
Bipolar (Bjt) Single Transistor, Darlington, Npn, 100 V, 70 W, 10 A, 750 Rohs Compliant: Yes |Stmicroelectronics BDX33C
Power Bipolar, NPN, 3V, 6mA, TO-220, TubeSTMicroelectronics SCT
DARLINGTON TRANSISTOR, TO-220; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 100V; Transition Frequency ft: -; Power Dissipation Pd: 70W; DC Collector Current: 10A; DC Current Gain hFE: 750hFE; Transistor Case
Product Comparison
The three parts on the right have similar specifications to BDX33C.
  • Image
    Part Number
    Manufacturer
    Lifecycle Status
    Factory Lead Time
    Contact Plating
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Transistor Element Material
    Operating Temperature
    Packaging
    JESD-609 Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Subcategory
    Max Power Dissipation
    Base Part Number
    Pin Count
    JESD-30 Code
    Number of Elements
    Polarity
    Element Configuration
    Power Dissipation
    Transistor Application
    Transistor Type
    Collector Emitter Voltage (VCEO)
    Max Collector Current
    DC Current Gain (hFE) (Min) @ Ic, Vce
    Current - Collector Cutoff (Max)
    Vce Saturation (Max) @ Ib, Ic
    Collector Emitter Breakdown Voltage
    Transition Frequency
    Collector Emitter Saturation Voltage
    Collector Base Voltage (VCBO)
    hFE Min
    Height
    Length
    Width
    REACH SVHC
    Radiation Hardening
    RoHS Status
    Lead Free
    Supplier Device Package
    Power - Max
    Voltage - Collector Emitter Breakdown (Max)
    Current - Collector (Ic) (Max)
    Surface Mount
    Weight
    Published
    Pbfree Code
    Additional Feature
    Voltage - Rated DC
    Peak Reflow Temperature (Cel)
    Current Rating
    Time@Peak Reflow Temperature-Max (s)
    Case Connection
    JEDEC-95 Code
    Emitter Base Voltage (VEBO)
    Continuous Collector Current
    Voltage - Collector Emitter Breakdown (Max):
    Vce Saturation (Max) @ Ib, Ic:
    Transistor Type:
    Supplier Device Package:
    Series:
    Power - Max:
    Packaging:
    Package / Case:
    Operating Temperature:
    Mounting Type:
    Frequency - Transition:
    DC Current Gain (hFE) (Min) @ Ic, Vce:
    Current - Collector Cutoff (Max):
    Current - Collector (Ic) (Max):
    View Compare
  • BDX33C
    BDX33C
    ACTIVE (Last Updated: 7 months ago)
    8 Weeks
    Tin
    Through Hole
    Through Hole
    TO-220-3
    2
    SILICON
    150°C TJ
    Tube
    e3
    Active
    1 (Unlimited)
    3
    EAR99
    Other Transistors
    70W
    BDX33
    3
    R-PSFM-T3
    1
    NPN
    Single
    70W
    SWITCHING
    NPN - Darlington
    100V
    10A
    750 @ 3A 3V
    500μA
    2.5V @ 6mA, 3A
    100V
    3MHz
    2.5V
    100V
    750
    9.15mm
    10.4mm
    4.6mm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • BDX34A
    -
    -
    -
    -
    Through Hole
    TO-220-3
    -
    -
    150°C TJ
    Bulk
    -
    Obsolete
    1 (Unlimited)
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    PNP
    -
    -
    750 @ 4A 3V
    500μA
    2.5V @ 8mA, 4A
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    ROHS3 Compliant
    -
    TO-220-3
    70W
    60V
    10A
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • BDX33CG
    ACTIVE (Last Updated: 1 day ago)
    5 Weeks
    Tin
    -
    Through Hole
    TO-220-3
    3
    SILICON
    -65°C~150°C TJ
    Tube
    e3
    Active
    1 (Unlimited)
    3
    EAR99
    Other Transistors
    70W
    BDX33
    3
    -
    1
    NPN
    Single
    70W
    SWITCHING
    NPN - Darlington
    100V
    10A
    750 @ 3A 3V
    500μA
    2.5V @ 6mA, 3A
    100V
    3MHz
    2.5V
    100V
    750
    15.75mm
    10.53mm
    4.83mm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    NO
    6.000006g
    2006
    yes
    LEADFORM OPTIONS ARE AVAILABLE
    100V
    260
    10A
    40
    COLLECTOR
    TO-220AB
    5V
    4A
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • BDX34C
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    100V
    2.5V @ 6mA, 3A
    PNP - Darlington
    TO-220AB
    -
    70W
    Tube
    TO-220-3
    -65°C ~ 150°C (TJ)
    Through Hole
    -
    750 @ 3A, 3V
    500µA
    10A
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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