Fairchild/ON Semiconductor BDX33C
- Part Number:
- BDX33C
- Manufacturer:
- Fairchild/ON Semiconductor
- Ventron No:
- 2463359-BDX33C
- Description:
- TRANS NPN 100V 10A TO-220
- Datasheet:
- TO220B03 Pkg Drawing
Fairchild/ON Semiconductor BDX33C technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor BDX33C.
- Lifecycle StatusACTIVE (Last Updated: 7 months ago)
- Factory Lead Time8 Weeks
- Contact PlatingTin
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-220-3
- Number of Pins2
- Transistor Element MaterialSILICON
- Operating Temperature150°C TJ
- PackagingTube
- JESD-609 Codee3
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- SubcategoryOther Transistors
- Max Power Dissipation70W
- Base Part NumberBDX33
- Pin Count3
- JESD-30 CodeR-PSFM-T3
- Number of Elements1
- PolarityNPN
- Element ConfigurationSingle
- Power Dissipation70W
- Transistor ApplicationSWITCHING
- Transistor TypeNPN - Darlington
- Collector Emitter Voltage (VCEO)100V
- Max Collector Current10A
- DC Current Gain (hFE) (Min) @ Ic, Vce750 @ 3A 3V
- Current - Collector Cutoff (Max)500μA
- Vce Saturation (Max) @ Ib, Ic2.5V @ 6mA, 3A
- Collector Emitter Breakdown Voltage100V
- Transition Frequency3MHz
- Collector Emitter Saturation Voltage2.5V
- Collector Base Voltage (VCBO)100V
- hFE Min750
- Height9.15mm
- Length10.4mm
- Width4.6mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
BDX33C Overview
This device has a DC current gain of 750 @ 3A 3V, which is the ratio between the collector current and the base current.A collector emitter saturation voltage of 2.5V allows maximum design flexibility.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).In this part, there is a transition frequency of 3MHz.The maximum collector current is 10A volts.
BDX33C Features
the DC current gain for this device is 750 @ 3A 3V
a collector emitter saturation voltage of 2.5V
the vce saturation(Max) is 2.5V @ 6mA, 3A
a transition frequency of 3MHz
BDX33C Applications
There are a lot of STMicroelectronics
BDX33C applications of single BJT transistors.
Inverter
Interface
Driver
Muting
This device has a DC current gain of 750 @ 3A 3V, which is the ratio between the collector current and the base current.A collector emitter saturation voltage of 2.5V allows maximum design flexibility.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).In this part, there is a transition frequency of 3MHz.The maximum collector current is 10A volts.
BDX33C Features
the DC current gain for this device is 750 @ 3A 3V
a collector emitter saturation voltage of 2.5V
the vce saturation(Max) is 2.5V @ 6mA, 3A
a transition frequency of 3MHz
BDX33C Applications
There are a lot of STMicroelectronics
BDX33C applications of single BJT transistors.
Inverter
Interface
Driver
Muting
BDX33C More Descriptions
Bipolar junction transistor, NPN, 10 A, 100 V, THT, TO-220, BDX33C
BDX33C Series 100 V 10 A Through Hole NPN Darlington Transistor - TO-220-3
Power Bipolar Transistor, 10A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
Trans Darlington NPN 100V 10A 3-Pin(3 Tab) TO-220 Tube - Rail/Tube
Bipolar (Bjt) Single Transistor, Darlington, Npn, 100 V, 70 W, 10 A, 750 Rohs Compliant: Yes |Stmicroelectronics BDX33C
Power Bipolar, NPN, 3V, 6mA, TO-220, TubeSTMicroelectronics SCT
DARLINGTON TRANSISTOR, TO-220; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 100V; Transition Frequency ft: -; Power Dissipation Pd: 70W; DC Collector Current: 10A; DC Current Gain hFE: 750hFE; Transistor Case
BDX33C Series 100 V 10 A Through Hole NPN Darlington Transistor - TO-220-3
Power Bipolar Transistor, 10A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
Trans Darlington NPN 100V 10A 3-Pin(3 Tab) TO-220 Tube - Rail/Tube
Bipolar (Bjt) Single Transistor, Darlington, Npn, 100 V, 70 W, 10 A, 750 Rohs Compliant: Yes |Stmicroelectronics BDX33C
Power Bipolar, NPN, 3V, 6mA, TO-220, TubeSTMicroelectronics SCT
DARLINGTON TRANSISTOR, TO-220; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 100V; Transition Frequency ft: -; Power Dissipation Pd: 70W; DC Collector Current: 10A; DC Current Gain hFE: 750hFE; Transistor Case
The three parts on the right have similar specifications to BDX33C.
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ImagePart NumberManufacturerLifecycle StatusFactory Lead TimeContact PlatingMountMounting TypePackage / CaseNumber of PinsTransistor Element MaterialOperating TemperaturePackagingJESD-609 CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeSubcategoryMax Power DissipationBase Part NumberPin CountJESD-30 CodeNumber of ElementsPolarityElement ConfigurationPower DissipationTransistor ApplicationTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageTransition FrequencyCollector Emitter Saturation VoltageCollector Base Voltage (VCBO)hFE MinHeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeSupplier Device PackagePower - MaxVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)Surface MountWeightPublishedPbfree CodeAdditional FeatureVoltage - Rated DCPeak Reflow Temperature (Cel)Current RatingTime@Peak Reflow Temperature-Max (s)Case ConnectionJEDEC-95 CodeEmitter Base Voltage (VEBO)Continuous Collector CurrentVoltage - Collector Emitter Breakdown (Max):Vce Saturation (Max) @ Ib, Ic:Transistor Type:Supplier Device Package:Series:Power - Max:Packaging:Package / Case:Operating Temperature:Mounting Type:Frequency - Transition:DC Current Gain (hFE) (Min) @ Ic, Vce:Current - Collector Cutoff (Max):Current - Collector (Ic) (Max):View Compare
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BDX33CACTIVE (Last Updated: 7 months ago)8 WeeksTinThrough HoleThrough HoleTO-220-32SILICON150°C TJTubee3Active1 (Unlimited)3EAR99Other Transistors70WBDX333R-PSFM-T31NPNSingle70WSWITCHINGNPN - Darlington100V10A750 @ 3A 3V500μA2.5V @ 6mA, 3A100V3MHz2.5V100V7509.15mm10.4mm4.6mmNo SVHCNoROHS3 CompliantLead Free--------------------------------
-
----Through HoleTO-220-3--150°C TJBulk-Obsolete1 (Unlimited)------------PNP--750 @ 4A 3V500μA2.5V @ 8mA, 4A----------ROHS3 Compliant-TO-220-370W60V10A---------------------------
-
ACTIVE (Last Updated: 1 day ago)5 WeeksTin-Through HoleTO-220-33SILICON-65°C~150°C TJTubee3Active1 (Unlimited)3EAR99Other Transistors70WBDX333-1NPNSingle70WSWITCHINGNPN - Darlington100V10A750 @ 3A 3V500μA2.5V @ 6mA, 3A100V3MHz2.5V100V75015.75mm10.53mm4.83mmNo SVHCNoROHS3 CompliantLead Free----NO6.000006g2006yesLEADFORM OPTIONS ARE AVAILABLE100V26010A40COLLECTORTO-220AB5V4A--------------
-
------------------------------------------------------------100V2.5V @ 6mA, 3APNP - DarlingtonTO-220AB-70WTubeTO-220-3-65°C ~ 150°C (TJ)Through Hole-750 @ 3A, 3V500µA10A
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