Bourns Inc. BDW83A-S
- Part Number:
- BDW83A-S
- Manufacturer:
- Bourns Inc.
- Ventron No:
- 2469414-BDW83A-S
- Description:
- TRANS NPN DARL 60V 15A
- Datasheet:
- BDW83x
Bourns Inc. BDW83A-S technical specifications, attributes, parameters and parts with similar specifications to Bourns Inc. BDW83A-S.
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-218-3
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature-65°C~150°C TJ
- PackagingTube
- Published2011
- JESD-609 Codee1
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishTIN SILVER COPPER
- Max Power Dissipation3.5W
- Terminal PositionSINGLE
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- Base Part NumberBDW83
- Pin Count3
- Qualification StatusNot Qualified
- Number of Elements1
- PolarityNPN
- Case ConnectionCOLLECTOR
- Power - Max3.5W
- Transistor ApplicationSWITCHING
- Transistor TypeNPN - Darlington
- Collector Emitter Voltage (VCEO)4V
- Max Collector Current15A
- DC Current Gain (hFE) (Min) @ Ic, Vce750 @ 6A 3V
- Current - Collector Cutoff (Max)1mA
- Vce Saturation (Max) @ Ib, Ic4V @ 150mA, 15A
- Collector Emitter Breakdown Voltage60V
- Collector Emitter Saturation Voltage2.5V
- Collector Base Voltage (VCBO)60V
- Emitter Base Voltage (VEBO)5V
- RoHS StatusROHS3 Compliant
BDW83A-S Overview
DC current gain in this device equals 750 @ 6A 3V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is 2.5V, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 4V @ 150mA, 15A.An emitter's base voltage can be kept at 5V to gain high efficiency.In extreme cases, the collector current can be as low as 15A volts.
BDW83A-S Features
the DC current gain for this device is 750 @ 6A 3V
a collector emitter saturation voltage of 2.5V
the vce saturation(Max) is 4V @ 150mA, 15A
the emitter base voltage is kept at 5V
BDW83A-S Applications
There are a lot of Bourns Inc.
BDW83A-S applications of single BJT transistors.
Inverter
Interface
Driver
Muting
DC current gain in this device equals 750 @ 6A 3V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is 2.5V, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 4V @ 150mA, 15A.An emitter's base voltage can be kept at 5V to gain high efficiency.In extreme cases, the collector current can be as low as 15A volts.
BDW83A-S Features
the DC current gain for this device is 750 @ 6A 3V
a collector emitter saturation voltage of 2.5V
the vce saturation(Max) is 4V @ 150mA, 15A
the emitter base voltage is kept at 5V
BDW83A-S Applications
There are a lot of Bourns Inc.
BDW83A-S applications of single BJT transistors.
Inverter
Interface
Driver
Muting
BDW83A-S More Descriptions
Trans Darlington NPN 60V 15A 3-Pin(3 Tab) SOT-93
NPN DARLINGTON 60V 15ATRANS NPN DARL 60V 15A
NPN DARLINGTON 60V 15A
The three parts on the right have similar specifications to BDW83A-S.
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ImagePart NumberManufacturerMountMounting TypePackage / CaseNumber of PinsTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishMax Power DissipationTerminal PositionPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Base Part NumberPin CountQualification StatusNumber of ElementsPolarityCase ConnectionPower - MaxTransistor ApplicationTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageCollector Emitter Saturation VoltageCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)RoHS StatusContact PlatingWeightPbfree CodeSubcategoryVoltage - Rated DCCurrent RatingElement ConfigurationPower DissipationhFE MinVCEsat-MaxHeightLengthWidthREACH SVHCRadiation HardeningLead FreeHTS CodeReach Compliance CodeJESD-30 CodeOperating Temperature (Max)ConfigurationPolarity/Channel TypeCurrent - Collector (Ic) (Max)Supplier Device PackageMax Operating TemperatureMin Operating TemperatureVoltage - Collector Emitter Breakdown (Max)View Compare
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BDW83A-SThrough HoleThrough HoleTO-218-33SILICON-65°C~150°C TJTube2011e1Obsolete1 (Unlimited)3EAR99TIN SILVER COPPER3.5WSINGLENOT SPECIFIEDNOT SPECIFIEDBDW833Not Qualified1NPNCOLLECTOR3.5WSWITCHINGNPN - Darlington4V15A750 @ 6A 3V1mA4V @ 150mA, 15A60V2.5V60V5VROHS3 Compliant----------------------------
-
Through HoleThrough HoleTO-247-33SILICON150°C TJTube-e3Obsolete1 (Unlimited)3EAR99-130W---BDW833-1NPN--SWITCHINGNPN - Darlington100V15A750 @ 6A 3V1mA4V @ 150mA, 15A100V2.5V100V5VROHS3 CompliantTin90.718474gyesOther Transistors100V15ASingle130W1004 V20.15mm15.75mm5.15mmNo SVHCNoLead Free-----------
-
Through HoleThrough HoleTO-218-3-SILICON-Bulk-e0Obsolete1 (Unlimited)3EAR99Tin/Lead (Sn/Pb)130WSINGLENOT SPECIFIEDNOT SPECIFIED--Not Qualified1-COLLECTOR-AMPLIFIERPNP-15A750 @ 6A 3V--80V---Non-RoHS Compliant--noOther Transistors------------8541.29.00.95not_compliantR-PSFM-T3150°CDARLINGTONPNP15A----
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Through HoleThrough HoleTO-218-33--65°C~150°C TJTube2011-Obsolete1 (Unlimited)---3.5W---BDW84--1PNP-3.5W-PNP - Darlington80V15A750 @ 6A 3V1mA4V @ 150mA, 15A80V2.5V80V5VROHS3 Compliant------Single---------------15ASOT-93150°C-65°C80V
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