Bourns Inc. BDW83-S
- Part Number:
- BDW83-S
- Manufacturer:
- Bourns Inc.
- Ventron No:
- 2469417-BDW83-S
- Description:
- TRANS NPN DARL 45V 15A
- Datasheet:
- BDW83x
Bourns Inc. BDW83-S technical specifications, attributes, parameters and parts with similar specifications to Bourns Inc. BDW83-S.
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-218-3
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature-65°C~150°C TJ
- PackagingTube
- Published2011
- JESD-609 Codee1
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishTIN SILVER COPPER
- Max Power Dissipation3.5W
- Terminal PositionSINGLE
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- Base Part NumberBDW83
- Pin Count3
- Qualification StatusNot Qualified
- Number of Elements1
- PolarityNPN
- Case ConnectionCOLLECTOR
- Power - Max3.5W
- Transistor ApplicationSWITCHING
- Transistor TypeNPN - Darlington
- Collector Emitter Voltage (VCEO)4V
- Max Collector Current15A
- DC Current Gain (hFE) (Min) @ Ic, Vce750 @ 6A 3V
- Current - Collector Cutoff (Max)1mA
- Vce Saturation (Max) @ Ib, Ic4V @ 150mA, 15A
- Collector Emitter Breakdown Voltage45V
- Collector Emitter Saturation Voltage2.5V
- Collector Base Voltage (VCBO)45V
- Emitter Base Voltage (VEBO)5V
- RoHS StatusROHS3 Compliant
BDW83-S Overview
DC current gain in this device equals 750 @ 6A 3V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is 2.5V, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 4V @ 150mA, 15A.An emitter's base voltage can be kept at 5V to gain high efficiency.In extreme cases, the collector current can be as low as 15A volts.
BDW83-S Features
the DC current gain for this device is 750 @ 6A 3V
a collector emitter saturation voltage of 2.5V
the vce saturation(Max) is 4V @ 150mA, 15A
the emitter base voltage is kept at 5V
BDW83-S Applications
There are a lot of Bourns Inc.
BDW83-S applications of single BJT transistors.
Inverter
Interface
Driver
Muting
DC current gain in this device equals 750 @ 6A 3V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is 2.5V, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 4V @ 150mA, 15A.An emitter's base voltage can be kept at 5V to gain high efficiency.In extreme cases, the collector current can be as low as 15A volts.
BDW83-S Features
the DC current gain for this device is 750 @ 6A 3V
a collector emitter saturation voltage of 2.5V
the vce saturation(Max) is 4V @ 150mA, 15A
the emitter base voltage is kept at 5V
BDW83-S Applications
There are a lot of Bourns Inc.
BDW83-S applications of single BJT transistors.
Inverter
Interface
Driver
Muting
BDW83-S More Descriptions
Trans Darlington NPN 45V 15A 3-Pin(3 Tab) SOT-93
TRANS NPN DARL 45V 15A
NPN DARLINGTON 120V 15A
TRANS NPN DARL 45V 15A
NPN DARLINGTON 120V 15A
The three parts on the right have similar specifications to BDW83-S.
-
ImagePart NumberManufacturerMountMounting TypePackage / CaseNumber of PinsTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishMax Power DissipationTerminal PositionPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Base Part NumberPin CountQualification StatusNumber of ElementsPolarityCase ConnectionPower - MaxTransistor ApplicationTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageCollector Emitter Saturation VoltageCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)RoHS StatusPbfree CodeHTS CodeSubcategoryReach Compliance CodeJESD-30 CodeOperating Temperature (Max)ConfigurationPolarity/Channel TypeCurrent - Collector (Ic) (Max)View Compare
-
BDW83-SThrough HoleThrough HoleTO-218-33SILICON-65°C~150°C TJTube2011e1Obsolete1 (Unlimited)3EAR99TIN SILVER COPPER3.5WSINGLENOT SPECIFIEDNOT SPECIFIEDBDW833Not Qualified1NPNCOLLECTOR3.5WSWITCHINGNPN - Darlington4V15A750 @ 6A 3V1mA4V @ 150mA, 15A45V2.5V45V5VROHS3 Compliant----------
-
Through HoleThrough HoleTO-218-3-SILICON-Bulk-e0Obsolete1 (Unlimited)3EAR99Tin/Lead (Sn/Pb)130WSINGLENOT SPECIFIEDNOT SPECIFIED--Not Qualified1-COLLECTOR-AMPLIFIERNPN-15A750 @ 6A 3V--60V---Non-RoHS Compliantno8541.29.00.95Other Transistorsnot_compliantR-PSFM-T3150°CDARLINGTONNPN15A
-
Through HoleThrough HoleTO-218-3-SILICON-Bulk-e0Obsolete1 (Unlimited)3EAR99Tin/Lead (Sn/Pb)130WSINGLENOT SPECIFIEDNOT SPECIFIED--Not Qualified1-COLLECTOR-AMPLIFIERPNP-15A750 @ 6A 3V--100V---Non-RoHS Compliantno8541.29.00.95Other Transistorsnot_compliantR-PSFM-T3150°CDARLINGTONPNP15A
-
Through HoleThrough HoleTO-218-3-SILICON-Bulk-e0Obsolete1 (Unlimited)3EAR99Tin/Lead (Sn/Pb)130WSINGLENOT SPECIFIEDNOT SPECIFIED--Not Qualified1-COLLECTOR-AMPLIFIERPNP-15A750 @ 6A 3V--80V---Non-RoHS Compliantno8541.29.00.95Other Transistorsnot_compliantR-PSFM-T3150°CDARLINGTONPNP15A
Popular Search Part Number
Related Keywords
Search Tags
Latest News
-
27 February 2024
LD7575PS Manufacturer, Advantages and Disadvantages and Other Details
Ⅰ. What is LD7575PS?Ⅱ. Pins and functions of LD7575PSⅢ. Manufacturer of LD7575PSⅣ. How does LD7575PS achieve stable output voltage?Ⅴ. Block diagram of LD7575PSⅥ. What is the performance of... -
27 February 2024
BQ32000DR Structure, Technical Parameters, Layout Guidelines and Applications
Ⅰ. Overview of BQ32000DRⅡ. Structure of BQ32000DRⅢ. Simplified schematic of BQ32000DRⅣ. Technical parameters of BQ32000DRⅤ. Layout guidelines for BQ32000DRⅥ. Where to use BQ32000DR?Ⅶ. How does the backup power... -
28 February 2024
An In-Depth Look at the TXS0108ERGYR: A Solution for Logic Level Conversion
Ⅰ. TXS0108ERGYR overviewⅡ. Specifications of TXS0108ERGYRⅢ. Recommended operating conditions of TXS0108ERGYRⅣ. Advantages of TXS0108ERGYRⅤ. Functional block diagram of TXSO108ERGYRⅥ. Application areas of TXS0108ERGYRⅦ. Wiring and circuit design of... -
28 February 2024
MAX232IDR Characteristics, Specifications, Application Fields and Working Principle
Ⅰ. Description of MAX232IDRⅡ. What are the characteristics of MAX232IDR?Ⅲ. Specifications of MAX232IDRⅣ. Parameter measurement information of MAX232IDRⅤ. Application fields of MAX232IDRⅥ. Application examples of MAX232IDRⅦ. How does...
Help you to save your cost and time.
Reliable package for your goods.
Fast Reliable Delivery to save time.
Quality premium after-sale service.