Bourns Inc. BDW53D-S
- Part Number:
- BDW53D-S
- Manufacturer:
- Bourns Inc.
- Ventron No:
- 2469397-BDW53D-S
- Description:
- TRANS NPN DARL 120V 4A
- Datasheet:
- BDW53
Bourns Inc. BDW53D-S technical specifications, attributes, parameters and parts with similar specifications to Bourns Inc. BDW53D-S.
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-220-3
- Transistor Element MaterialSILICON
- Operating Temperature-65°C~150°C TJ
- PackagingTube
- Published1993
- JESD-609 Codee1
- Pbfree Codeyes
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishTIN SILVER COPPER
- Max Power Dissipation2W
- Base Part NumberBDW53
- Pin Count3
- JESD-30 CodeR-PSFM-T3
- Number of Elements1
- PolarityNPN
- Element ConfigurationSingle
- Power Dissipation40W
- Case ConnectionCOLLECTOR
- Power - Max2W
- Transistor ApplicationSWITCHING
- Transistor TypeNPN - Darlington
- Collector Emitter Voltage (VCEO)120V
- Max Collector Current4A
- DC Current Gain (hFE) (Min) @ Ic, Vce750 @ 1.5A 3V
- Current - Collector Cutoff (Max)500μA
- JEDEC-95 CodeTO-220AB
- Vce Saturation (Max) @ Ib, Ic4V @ 40mA, 4A
- Collector Emitter Breakdown Voltage120V
- Collector Emitter Saturation Voltage2.5V
- Collector Base Voltage (VCBO)120V
- Emitter Base Voltage (VEBO)5V
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
BDW53D-S Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 750 @ 1.5A 3V DC current gain.As it features a collector emitter saturation voltage of 2.5V, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 5V can result in a high level of efficiency.When collector current reaches its maximum, it can reach 4A volts.
BDW53D-S Features
the DC current gain for this device is 750 @ 1.5A 3V
a collector emitter saturation voltage of 2.5V
the vce saturation(Max) is 4V @ 40mA, 4A
the emitter base voltage is kept at 5V
BDW53D-S Applications
There are a lot of Bourns Inc.
BDW53D-S applications of single BJT transistors.
Inverter
Interface
Driver
Muting
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 750 @ 1.5A 3V DC current gain.As it features a collector emitter saturation voltage of 2.5V, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 5V can result in a high level of efficiency.When collector current reaches its maximum, it can reach 4A volts.
BDW53D-S Features
the DC current gain for this device is 750 @ 1.5A 3V
a collector emitter saturation voltage of 2.5V
the vce saturation(Max) is 4V @ 40mA, 4A
the emitter base voltage is kept at 5V
BDW53D-S Applications
There are a lot of Bourns Inc.
BDW53D-S applications of single BJT transistors.
Inverter
Interface
Driver
Muting
BDW53D-S More Descriptions
120V 4A Darlington Bipolar Junction NPN Transistor TO-220
Darlington transistor TO-220 NPN 120 V
Trans Darlington NPN 120V 4A 3-Pin(3 Tab) TO-220
Darlington transistor TO-220 NPN 120 V
Trans Darlington NPN 120V 4A 3-Pin(3 Tab) TO-220
The three parts on the right have similar specifications to BDW53D-S.
-
ImagePart NumberManufacturerMountMounting TypePackage / CaseTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishMax Power DissipationBase Part NumberPin CountJESD-30 CodeNumber of ElementsPolarityElement ConfigurationPower DissipationCase ConnectionPower - MaxTransistor ApplicationTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)JEDEC-95 CodeVce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageCollector Emitter Saturation VoltageCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)Radiation HardeningRoHS StatusNumber of PinsHTS CodePolarity/Channel TypeView Compare
-
BDW53D-SThrough HoleThrough HoleTO-220-3SILICON-65°C~150°C TJTube1993e1yesObsolete1 (Unlimited)3EAR99TIN SILVER COPPER2WBDW533R-PSFM-T31NPNSingle40WCOLLECTOR2WSWITCHINGNPN - Darlington120V4A750 @ 1.5A 3V500μATO-220AB4V @ 40mA, 4A120V2.5V120V5VNoROHS3 Compliant----
-
Through HoleThrough HoleTO-220-3SILICON-65°C~150°C TJTube1993e1yesObsolete1 (Unlimited)3EAR99TIN SILVER COPPER2WBDW543R-PSFM-T31PNPSingle-COLLECTOR2WSWITCHINGPNP - Darlington120V4A750 @ 1.5A 3V500μATO-220AB4V @ 40mA, 4A120V2.5V120V5VNoROHS3 Compliant---
-
Through HoleThrough HoleTO-220-3SILICON-65°C~150°C TJTube1993e1yesObsolete1 (Unlimited)3EAR99TIN SILVER COPPER2WBDW533R-PSFM-T31NPNSingle-COLLECTOR2WSWITCHINGNPN - Darlington80V4A750 @ 1.5A 3V500μATO-220AB4V @ 40mA, 4A80V2.5V80V5VNoROHS3 Compliant---
-
Through HoleThrough HoleTO-220-3SILICON-65°C~150°C TJTube1993e1yesObsolete1 (Unlimited)3EAR99TIN SILVER COPPER2WBDW533-1-Single-COLLECTOR2WSWITCHINGNPN - Darlington4V4A750 @ 1.5A 3V500μATO-220AB4V @ 40mA, 4A60V-60V-NoROHS3 Compliant38541.29.00.95NPN
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