BDW53D-S

Bourns Inc. BDW53D-S

Part Number:
BDW53D-S
Manufacturer:
Bourns Inc.
Ventron No:
2469397-BDW53D-S
Description:
TRANS NPN DARL 120V 4A
ECAD Model:
Datasheet:
BDW53

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Specifications
Bourns Inc. BDW53D-S technical specifications, attributes, parameters and parts with similar specifications to Bourns Inc. BDW53D-S.
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    TO-220-3
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -65°C~150°C TJ
  • Packaging
    Tube
  • Published
    1993
  • JESD-609 Code
    e1
  • Pbfree Code
    yes
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • ECCN Code
    EAR99
  • Terminal Finish
    TIN SILVER COPPER
  • Max Power Dissipation
    2W
  • Base Part Number
    BDW53
  • Pin Count
    3
  • JESD-30 Code
    R-PSFM-T3
  • Number of Elements
    1
  • Polarity
    NPN
  • Element Configuration
    Single
  • Power Dissipation
    40W
  • Case Connection
    COLLECTOR
  • Power - Max
    2W
  • Transistor Application
    SWITCHING
  • Transistor Type
    NPN - Darlington
  • Collector Emitter Voltage (VCEO)
    120V
  • Max Collector Current
    4A
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    750 @ 1.5A 3V
  • Current - Collector Cutoff (Max)
    500μA
  • JEDEC-95 Code
    TO-220AB
  • Vce Saturation (Max) @ Ib, Ic
    4V @ 40mA, 4A
  • Collector Emitter Breakdown Voltage
    120V
  • Collector Emitter Saturation Voltage
    2.5V
  • Collector Base Voltage (VCBO)
    120V
  • Emitter Base Voltage (VEBO)
    5V
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
Description
BDW53D-S Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 750 @ 1.5A 3V DC current gain.As it features a collector emitter saturation voltage of 2.5V, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 5V can result in a high level of efficiency.When collector current reaches its maximum, it can reach 4A volts.

BDW53D-S Features
the DC current gain for this device is 750 @ 1.5A 3V
a collector emitter saturation voltage of 2.5V
the vce saturation(Max) is 4V @ 40mA, 4A
the emitter base voltage is kept at 5V


BDW53D-S Applications
There are a lot of Bourns Inc.
BDW53D-S applications of single BJT transistors.


Inverter
Interface
Driver
Muting
BDW53D-S More Descriptions
120V 4A Darlington Bipolar Junction NPN Transistor TO-220
Darlington transistor TO-220 NPN 120 V
Trans Darlington NPN 120V 4A 3-Pin(3 Tab) TO-220
Product Comparison
The three parts on the right have similar specifications to BDW53D-S.
  • Image
    Part Number
    Manufacturer
    Mount
    Mounting Type
    Package / Case
    Transistor Element Material
    Operating Temperature
    Packaging
    Published
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Terminal Finish
    Max Power Dissipation
    Base Part Number
    Pin Count
    JESD-30 Code
    Number of Elements
    Polarity
    Element Configuration
    Power Dissipation
    Case Connection
    Power - Max
    Transistor Application
    Transistor Type
    Collector Emitter Voltage (VCEO)
    Max Collector Current
    DC Current Gain (hFE) (Min) @ Ic, Vce
    Current - Collector Cutoff (Max)
    JEDEC-95 Code
    Vce Saturation (Max) @ Ib, Ic
    Collector Emitter Breakdown Voltage
    Collector Emitter Saturation Voltage
    Collector Base Voltage (VCBO)
    Emitter Base Voltage (VEBO)
    Radiation Hardening
    RoHS Status
    Number of Pins
    HTS Code
    Polarity/Channel Type
    View Compare
  • BDW53D-S
    BDW53D-S
    Through Hole
    Through Hole
    TO-220-3
    SILICON
    -65°C~150°C TJ
    Tube
    1993
    e1
    yes
    Obsolete
    1 (Unlimited)
    3
    EAR99
    TIN SILVER COPPER
    2W
    BDW53
    3
    R-PSFM-T3
    1
    NPN
    Single
    40W
    COLLECTOR
    2W
    SWITCHING
    NPN - Darlington
    120V
    4A
    750 @ 1.5A 3V
    500μA
    TO-220AB
    4V @ 40mA, 4A
    120V
    2.5V
    120V
    5V
    No
    ROHS3 Compliant
    -
    -
    -
    -
  • BDW54D-S
    Through Hole
    Through Hole
    TO-220-3
    SILICON
    -65°C~150°C TJ
    Tube
    1993
    e1
    yes
    Obsolete
    1 (Unlimited)
    3
    EAR99
    TIN SILVER COPPER
    2W
    BDW54
    3
    R-PSFM-T3
    1
    PNP
    Single
    -
    COLLECTOR
    2W
    SWITCHING
    PNP - Darlington
    120V
    4A
    750 @ 1.5A 3V
    500μA
    TO-220AB
    4V @ 40mA, 4A
    120V
    2.5V
    120V
    5V
    No
    ROHS3 Compliant
    -
    -
    -
  • BDW53B-S
    Through Hole
    Through Hole
    TO-220-3
    SILICON
    -65°C~150°C TJ
    Tube
    1993
    e1
    yes
    Obsolete
    1 (Unlimited)
    3
    EAR99
    TIN SILVER COPPER
    2W
    BDW53
    3
    R-PSFM-T3
    1
    NPN
    Single
    -
    COLLECTOR
    2W
    SWITCHING
    NPN - Darlington
    80V
    4A
    750 @ 1.5A 3V
    500μA
    TO-220AB
    4V @ 40mA, 4A
    80V
    2.5V
    80V
    5V
    No
    ROHS3 Compliant
    -
    -
    -
  • BDW53A-S
    Through Hole
    Through Hole
    TO-220-3
    SILICON
    -65°C~150°C TJ
    Tube
    1993
    e1
    yes
    Obsolete
    1 (Unlimited)
    3
    EAR99
    TIN SILVER COPPER
    2W
    BDW53
    3
    -
    1
    -
    Single
    -
    COLLECTOR
    2W
    SWITCHING
    NPN - Darlington
    4V
    4A
    750 @ 1.5A 3V
    500μA
    TO-220AB
    4V @ 40mA, 4A
    60V
    -
    60V
    -
    No
    ROHS3 Compliant
    3
    8541.29.00.95
    NPN
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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