ON Semiconductor BD441

Name: BD441
Brand: ON Semiconductor
SKU: 2468165-BD441
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: BD441

Manufacturer:: ON Semiconductor

Ventron No:: 2468165-BD441

Description:: TRANS NPN 80V 4A TO-225AA

ECAD Model:

Datasheet:: BD441

Specifications

ON Semiconductor BD441 technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor BD441.

Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-225AA, TO-126-3
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tube
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn)
Subcategory
Other Transistors
Max Power Dissipation
36W
Terminal Position
SINGLE
Frequency
3MHz
Base Part Number
BD441
Pin Count
3
Number of Elements
1
Configuration
SINGLE
Power Dissipation
36W
Case Connection
ISOLATED
Transistor Application
SWITCHING
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
80V
Max Collector Current
4A
DC Current Gain (hFE) (Min) @ Ic, Vce
40 @ 500mA 1V
Current - Collector Cutoff (Max)
100μA
Vce Saturation (Max) @ Ib, Ic
800mV @ 200mA, 2A
Collector Emitter Breakdown Voltage
80V
Transition Frequency
3MHz
Collector Emitter Saturation Voltage
800mV
Collector Base Voltage (VCBO)
80V
Emitter Base Voltage (VEBO)
5V
VCEsat-Max
0.8 V
Height
10.8mm
Length
7.8mm
Width
2.7mm
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant

Description

BD441 Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 40 @ 500mA 1V DC current gain.As it features a collector emitter saturation voltage of 800mV, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 5V can result in a high level of efficiency.There is a transition frequency of 3MHz in the part.When collector current reaches its maximum, it can reach 4A volts.

BD441 Features
the DC current gain for this device is 40 @ 500mA 1V
a collector emitter saturation voltage of 800mV
the vce saturation(Max) is 800mV @ 200mA, 2A
the emitter base voltage is kept at 5V
a transition frequency of 3MHz

BD441 Applications
There are a lot of STMicroelectronics
BD441 applications of single BJT transistors.

Inverter
Interface
Driver
Muting

BD441 More Descriptions

Trans GP BJT NPN 80V 4A 36000mW 3-Pin(3 Tab) TO-126
Bipolar Transistor, Npn, 80V; Transistor Polarity:Npn; Collector Emitter Voltage Max:80V; Continuous Collector Current:4A; Power Dissipation:36W; Transistor Mounting:Through Hole; No. Of Pins:3Pins; Transition Frequency:3Mhz; Msl:- Rohs Compliant: Yes |Multicomp BD441
TRANSISTOR,NPN,4A,80V,TO126; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 80V; Transition Frequency ft: 3MHz; Power Dissipation Pd: 36W; DC Collector Current: 4A; DC Current Gain hFE: 15hFE; Transistor Case St

Product Comparison

The three parts on the right have similar specifications to BD441.

Image

Part Number

Manufacturer

Mount

Mounting Type

Package / Case

Number of Pins

Transistor Element Material

Operating Temperature

Packaging

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Terminal Finish

Subcategory

Max Power Dissipation

Terminal Position

Frequency

Base Part Number

Pin Count

Number of Elements

Configuration

Power Dissipation

Case Connection

Transistor Application

Polarity/Channel Type

Transistor Type

Collector Emitter Voltage (VCEO)

Max Collector Current

DC Current Gain (hFE) (Min) @ Ic, Vce

Current - Collector Cutoff (Max)

Vce Saturation (Max) @ Ib, Ic

Collector Emitter Breakdown Voltage

Transition Frequency

Collector Emitter Saturation Voltage

Collector Base Voltage (VCBO)

Emitter Base Voltage (VEBO)

VCEsat-Max

Height

Length

Width

REACH SVHC

Radiation Hardening

RoHS Status

Surface Mount

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

JESD-30 Code

Qualification Status

Power - Max

Voltage - Collector Emitter Breakdown (Max)

Current - Collector (Ic) (Max)

Frequency - Transition

Voltage - Collector Emitter Breakdown (Max):

Vce Saturation (Max) @ Ib, Ic:

Transistor Type:

Supplier Device Package:

Series:

Power - Max:

Packaging:

Package / Case:

Operating Temperature:

Mounting Type:

Frequency - Transition:

DC Current Gain (hFE) (Min) @ Ic, Vce:

Current - Collector Cutoff (Max):

Current - Collector (Ic) (Max):

View Compare
BD441

ON Semiconductor

Through Hole

Through Hole

TO-225AA, TO-126-3

3

SILICON

150°C TJ

Tube

e3

yes

Obsolete

1 (Unlimited)

3

EAR99

Matte Tin (Sn)

Other Transistors

36W

SINGLE

3MHz

BD441

3

1

SINGLE

36W

ISOLATED

SWITCHING

NPN

NPN

80V

4A

40 @ 500mA 1V

100μA

800mV @ 200mA, 2A

80V

3MHz

800mV

80V

5V

0.8 V

10.8mm

7.8mm

2.7mm

No SVHC

No

ROHS3 Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
BD441STU

Fairchild/ON Semiconductor

-

Through Hole

TO-225AA, TO-126-3

-

SILICON

150°C TJ

Tube

e3

yes

Obsolete

1 (Unlimited)

3

-

MATTE TIN

-

-

SINGLE

-

-

-

1

SINGLE

-

-

SWITCHING

NPN

NPN

-

-

40 @ 500mA 1V

100μA

800mV @ 200mA, 2A

-

3MHz

-

-

-

-

-

-

-

-

-

ROHS3 Compliant

NO

NOT SPECIFIED

NOT SPECIFIED

R-PSFM-T3

COMMERCIAL

36W

80V

4A

3MHz

-

-

-

-

-

-

-

-

-

-

-

-

-

-

BD441 vs BD441STU
BD442

STMicroelectronics

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-

80V

800mV @ 200mA, 2A

PNP

SOT-32

-

36W

Tube

TO-225AA, TO-126-3

150°C (TJ)

Through Hole

-

40 @ 500mA, 1V

100µA

4A

BD441 vs BD442
BD441

STMicroelectronics

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80V

800mV @ 200mA, 2A

NPN

SOT-32

-

36W

Tube

TO-225AA, TO-126-3

150°C (TJ)

Through Hole

-

40 @ 500mA, 1V

100µA

4A

-