Fairchild/ON Semiconductor BD1396STU

Name: BD1396STU
Brand: Fairchild/ON Semiconductor
SKU: 2463205-BD1396STU
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: BD1396STU

Manufacturer:: Fairchild/ON Semiconductor

Ventron No:: 2463205-BD1396STU

Description:: TRANS NPN 80V 1.5A TO-126

ECAD Model:

Datasheet:: BD135/137/139

Specifications

Fairchild/ON Semiconductor BD1396STU technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor BD1396STU.

Lifecycle Status
LAST SHIPMENTS (Last Updated: 6 days ago)
Factory Lead Time
6 Weeks
Contact Plating
Tin
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-225AA, TO-126-3
Number of Pins
3
Weight
761mg
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tube
Published
2013
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Subcategory
Other Transistors
Voltage - Rated DC
80V
Max Power Dissipation
12.5W
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Current Rating
1.5A
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Base Part Number
BD139
Qualification Status
Not Qualified
Number of Elements
1
Element Configuration
Single
Power Dissipation
1.25W
Transistor Application
SWITCHING
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
80V
Max Collector Current
1.5A
DC Current Gain (hFE) (Min) @ Ic, Vce
40 @ 150mA 2V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
500mV @ 50mA, 500mA
Collector Emitter Breakdown Voltage
80V
Transition Frequency
250MHz
Collector Emitter Saturation Voltage
500mV
Collector Base Voltage (VCBO)
80V
Emitter Base Voltage (VEBO)
5V
hFE Min
40
Height
11.2mm
Length
8.3mm
Width
3.45mm
REACH SVHC
No SVHC
RoHS Status
RoHS Compliant
Lead Free
Lead Free

Description

BD1396STU Overview
This device has a DC current gain of 40 @ 150mA 2V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 500mV.A VCE saturation (Max) of 500mV @ 50mA, 500mA means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.This device has a current rating of 1.5A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.As you can see, the part has a transition frequency of 250MHz.A maximum collector current of 1.5A volts is possible.

BD1396STU Features
the DC current gain for this device is 40 @ 150mA 2V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
the current rating of this device is 1.5A
a transition frequency of 250MHz

BD1396STU Applications
There are a lot of ON Semiconductor
BD1396STU applications of single BJT transistors.

Inverter
Interface
Driver
Muting

BD1396STU More Descriptions

Bipolar Transistors - BJT NPN Si Transistor Epitaxial
1.5 A, 80 V NPN Power Bipolar Junction Transistor
Trans GP BJT NPN 80V 1.5A 1250mW 3-Pin(3 Tab) TO-126 Rail
BD139 Series 80 V 12.5 W 1.5 A NPN Epitaxial Silicon Transistor - TO-126
Power Bipolar Transistor, 1.5A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin
Transistor, BIPOL, NPN, 80V, TO-126-3; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:80V; Transition Frequency ft:-; Power Dissipation

Certification