Fairchild/ON Semiconductor BD13916S

Name: BD13916S
Brand: Fairchild/ON Semiconductor
SKU: 2465421-BD13916S
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: BD13916S

Manufacturer:: Fairchild/ON Semiconductor

Ventron No:: 2465421-BD13916S

Description:: TRANS NPN 80V 1.5A TO-126

ECAD Model:

Datasheet:: BD135/137/139

Specifications

Fairchild/ON Semiconductor BD13916S technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor BD13916S.

Lifecycle Status
ACTIVE (Last Updated: 6 days ago)
Factory Lead Time
22 Weeks
Contact Plating
Tin
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-225AA, TO-126-3
Number of Pins
3
Weight
761mg
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Bulk
Published
2013
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
Termination
Through Hole
ECCN Code
EAR99
Subcategory
Other Transistors
Voltage - Rated DC
80V
Max Power Dissipation
1.25W
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Current Rating
1.5A
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Base Part Number
BD139
Qualification Status
Not Qualified
Number of Elements
1
Element Configuration
Single
Power Dissipation
1.25W
Transistor Application
SWITCHING
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
80V
Max Collector Current
1.5A
DC Current Gain (hFE) (Min) @ Ic, Vce
100 @ 150mA 2V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
500mV @ 50mA, 500mA
Collector Emitter Breakdown Voltage
80V
Collector Emitter Saturation Voltage
500mV
Collector Base Voltage (VCBO)
80V
Emitter Base Voltage (VEBO)
5V
hFE Min
40
Height
11mm
Length
8mm
Width
3.25mm
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

BD13916S Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 100 @ 150mA 2V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 500mV.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 500mV @ 50mA, 500mA.The emitter base voltage can be kept at 5V for high efficiency.The current rating of this fuse is 1.5A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.Single BJT transistor is possible to have a collector current as low as 1.5A volts at Single BJT transistors maximum.

BD13916S Features
the DC current gain for this device is 100 @ 150mA 2V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
the current rating of this device is 1.5A

BD13916S Applications
There are a lot of ON Semiconductor
BD13916S applications of single BJT transistors.

Inverter
Interface
Driver
Muting

BD13916S More Descriptions

1.5 A, 80 V NPN Power Bipolar Junction Transistor
Transistor BD139 NPN Medium Power Switching 80 Volts 1.5 Amp TO-126
NPN 1.25 W 80 V 1.5 A Through Hole Epitaxial Silicon Transistor - TO-126-3
Power Bipolar Transistor, 1.5A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin
Trans GP BJT NPN 80V 1.5A 3-Pin(3 Tab) TO-126 Bulk - Bulk
Bipolar Transistors - BJT NPN Epitaxial Sil
Transistor, BIPOL, NPN, 80V, TO-126-3; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:80V; Transition Frequency ft:-; Power Dissipation

Certification