ON Semiconductor BD136G
- Part Number:
- BD136G
- Manufacturer:
- ON Semiconductor
- Ventron No:
- 2463747-BD136G
- Description:
- TRANS PNP 45V 1.5A TO225AA
- ECAD Model:
-
- Datasheet:
- BD136G
ON Semiconductor BD136G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor BD136G.
- Lifecycle StatusACTIVE (Last Updated: 1 day ago)
- Factory Lead Time4 Weeks
- Contact PlatingTin
- Mounting TypeThrough Hole
- Package / CaseTO-225AA, TO-126-3
- Surface MountNO
- Number of Pins3
- Weight4.535924g
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingBulk
- Published2011
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- SubcategoryOther Transistors
- Voltage - Rated DC-45V
- Max Power Dissipation1.25W
- Peak Reflow Temperature (Cel)260
- Current Rating-1.5A
- Time@Peak Reflow Temperature-Max (s)40
- Base Part NumberBD136
- Pin Count3
- Number of Elements1
- Element ConfigurationSingle
- Power Dissipation1.25W
- Transistor ApplicationAMPLIFIER
- Polarity/Channel TypePNP
- Transistor TypePNP
- Collector Emitter Voltage (VCEO)45V
- Max Collector Current1.5A
- DC Current Gain (hFE) (Min) @ Ic, Vce40 @ 150mA 2V
- Current - Collector Cutoff (Max)100nA ICBO
- Vce Saturation (Max) @ Ib, Ic500mV @ 50mA, 500mA
- Collector Emitter Breakdown Voltage45V
- Collector Emitter Saturation Voltage500mV
- Collector Base Voltage (VCBO)45V
- Emitter Base Voltage (VEBO)5V
- hFE Min25
- Height11.0998mm
- Length7.7978mm
- Width2.9972mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
BD136G Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 40 @ 150mA 2V DC current gain.As it features a collector emitter saturation voltage of 500mV, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 5V can result in a high level of efficiency.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.When collector current reaches its maximum, it can reach 1.5A volts.
BD136G Features
the DC current gain for this device is 40 @ 150mA 2V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
the current rating of this device is -1.5A
BD136G Applications
There are a lot of ON Semiconductor
BD136G applications of single BJT transistors.
Inverter
Interface
Driver
Muting
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 40 @ 150mA 2V DC current gain.As it features a collector emitter saturation voltage of 500mV, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 5V can result in a high level of efficiency.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.When collector current reaches its maximum, it can reach 1.5A volts.
BD136G Features
the DC current gain for this device is 40 @ 150mA 2V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
the current rating of this device is -1.5A
BD136G Applications
There are a lot of ON Semiconductor
BD136G applications of single BJT transistors.
Inverter
Interface
Driver
Muting
BD136G More Descriptions
1.5 A, 45 V PNP Bipolar Power Transistor
Trans GP BJT PNP 45V 1.5A 1250mW 3-Pin(3 Tab) TO-225 Box
BD Series 45 V 1.5 A Plastic Medium Power Silicon PNP Transistor - TO-225AA
Transistor, Bipolar,Si,PNP,Medium Power,VCEO 45VDC,IC 1.5A,PD 12.5W,TO-225AA | ON Semiconductor BD136G
45V 1.25W 1.5A 40@150mA2V 500mV@500mA50mA PNP 150¡Í@(Tj) TO-225 Bipolar Transistors - BJT ROHS
Power Bipolar Transistor, 1.5A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon, TO-225AA, Plastic/Epoxy, 3 Pin
Transistor, Bipol, Pnp, 45V, To-225-3; Transistor Polarity:Pnp; Collector Emitter Voltage V(Br)Ceo:-45V; Transition Frequency Ft:-; Power Dissipation Pd:1.25W; Dc Collector Current:-1.5A; Dc Current Gain Hfe:25Hfe; Transistor Case Rohs Compliant: Yes |Onsemi BD136G
This series of plastic medium-power silicon PNP transistors are designed for use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits.
Trans GP BJT PNP 45V 1.5A 1250mW 3-Pin(3 Tab) TO-225 Box
BD Series 45 V 1.5 A Plastic Medium Power Silicon PNP Transistor - TO-225AA
Transistor, Bipolar,Si,PNP,Medium Power,VCEO 45VDC,IC 1.5A,PD 12.5W,TO-225AA | ON Semiconductor BD136G
45V 1.25W 1.5A 40@150mA2V 500mV@500mA50mA PNP 150¡Í@(Tj) TO-225 Bipolar Transistors - BJT ROHS
Power Bipolar Transistor, 1.5A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon, TO-225AA, Plastic/Epoxy, 3 Pin
Transistor, Bipol, Pnp, 45V, To-225-3; Transistor Polarity:Pnp; Collector Emitter Voltage V(Br)Ceo:-45V; Transition Frequency Ft:-; Power Dissipation Pd:1.25W; Dc Collector Current:-1.5A; Dc Current Gain Hfe:25Hfe; Transistor Case Rohs Compliant: Yes |Onsemi BD136G
This series of plastic medium-power silicon PNP transistors are designed for use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits.
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