Fairchild/ON Semiconductor BD1366STU
- Part Number:
- BD1366STU
- Manufacturer:
- Fairchild/ON Semiconductor
- Ventron No:
- 2467456-BD1366STU
- Description:
- TRANS PNP 45V 1.5A TO-126
- Datasheet:
- BD136/138/140
Fairchild/ON Semiconductor BD1366STU technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor BD1366STU.
- Mounting TypeThrough Hole
- Package / CaseTO-225AA, TO-126-3
- Operating Temperature150°C TJ
- PackagingTube
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Base Part NumberBD136
- Power - Max1.25W
- Transistor TypePNP
- DC Current Gain (hFE) (Min) @ Ic, Vce40 @ 150mA 2V
- Current - Collector Cutoff (Max)100nA ICBO
- Vce Saturation (Max) @ Ib, Ic500mV @ 50mA, 500mA
- Voltage - Collector Emitter Breakdown (Max)45V
- Current - Collector (Ic) (Max)1.5A
BD1366STU Overview
This device has a DC current gain of 40 @ 150mA 2V, which is the ratio between the base current and the collector current.A VCE saturation (Max) of 500mV @ 50mA, 500mA means Ic has reached its maximum value(saturated).Collector Emitter Breakdown occurs at 45VV - Maximum voltage.
BD1366STU Features
the DC current gain for this device is 40 @ 150mA 2V
the vce saturation(Max) is 500mV @ 50mA, 500mA
BD1366STU Applications
There are a lot of ON Semiconductor
BD1366STU applications of single BJT transistors.
Inverter
Interface
Driver
Muting
This device has a DC current gain of 40 @ 150mA 2V, which is the ratio between the base current and the collector current.A VCE saturation (Max) of 500mV @ 50mA, 500mA means Ic has reached its maximum value(saturated).Collector Emitter Breakdown occurs at 45VV - Maximum voltage.
BD1366STU Features
the DC current gain for this device is 40 @ 150mA 2V
the vce saturation(Max) is 500mV @ 50mA, 500mA
BD1366STU Applications
There are a lot of ON Semiconductor
BD1366STU applications of single BJT transistors.
Inverter
Interface
Driver
Muting
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