Fairchild/ON Semiconductor BD13516STU

Name: BD13516STU
Brand: Fairchild/ON Semiconductor
SKU: 3813396-BD13516STU
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: BD13516STU

Manufacturer:: Fairchild/ON Semiconductor

Ventron No:: 3813396-BD13516STU

Description:: TRANS NPN 45V 1.5A TO-126

ECAD Model:

Datasheet:: BD13516STU

Specifications

Fairchild/ON Semiconductor BD13516STU technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor BD13516STU.

Lifecycle Status
ACTIVE (Last Updated: 5 days ago)
Factory Lead Time
22 Weeks
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-225AA, TO-126-3
Number of Pins
3
Weight
761mg
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tube
Published
2013
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
Subcategory
Other Transistors
Voltage - Rated DC
45V
Max Power Dissipation
1.25W
Current Rating
1.5A
Base Part Number
BD135
Number of Elements
1
Element Configuration
Single
Power Dissipation
1.25W
Transistor Application
SWITCHING
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
45V
Max Collector Current
1.5A
DC Current Gain (hFE) (Min) @ Ic, Vce
100 @ 150mA 2V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
500mV @ 50mA, 500mA
Collector Emitter Breakdown Voltage
45V
Transition Frequency
250MHz
Collector Emitter Saturation Voltage
500mV
Collector Base Voltage (VCBO)
45V
Emitter Base Voltage (VEBO)
5V
hFE Min
40
Height
11.2mm
Length
8.3mm
Width
3.45mm
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

BD13516STU Overview
This device has a DC current gain of 100 @ 150mA 2V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 500mV.A VCE saturation (Max) of 500mV @ 50mA, 500mA means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.This device has a current rating of 1.5A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.As you can see, the part has a transition frequency of 250MHz.A maximum collector current of 1.5A volts is possible.

BD13516STU Features
the DC current gain for this device is 100 @ 150mA 2V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
the current rating of this device is 1.5A
a transition frequency of 250MHz

BD13516STU Applications
There are a lot of ON Semiconductor
BD13516STU applications of single BJT transistors.

Inverter
Interface
Driver
Muting

BD13516STU More Descriptions

1.5 A, 45V NPN Power Bipolar Junction Transistor
BD135 Series 45 V 1.5 A Through Hole NPN Epitaxial Silicon Transistor - TO-126
Power Bipolar Transistor, 1.5A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin
Trans GP BJT NPN 45V 1.5A 3-Pin(3 Tab) TO-126 Rail - Rail/Tube
Bipolar Transistors - BJT NPN Epitaxial Sil
Trans, Npn, 45V, 1.5A, 150Deg C, 12.5W Rohs Compliant: Yes |Onsemi BD13516STU

Certification