STMicroelectronics BD135
- Part Number:
- BD135
- Manufacturer:
- STMicroelectronics
- Ventron No:
- 2463262-BD135
- Description:
- TRANS NPN 45V 1.5A SOT-32
- ECAD Model:
-
- Datasheet:
- BD135
STMicroelectronics BD135 technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics BD135.
- Mounting TypeThrough Hole
- Package / CaseTO-225AA, TO-126-3
- Surface MountNO
- Transistor Element MaterialSILICON
- Operating Temperature150°C TJ
- PackagingBulk
- JESD-609 Codee0
- Pbfree Codeno
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- Terminal FinishTIN LEAD
- Terminal PositionSINGLE
- Peak Reflow Temperature (Cel)240
- Reach Compliance Codeunknown
- Time@Peak Reflow Temperature-Max (s)30
- Pin Count3
- JESD-30 CodeR-PSFM-T3
- Qualification StatusCOMMERCIAL
- Number of Elements1
- ConfigurationSINGLE
- Power - Max1.25W
- Transistor ApplicationAMPLIFIER
- Polarity/Channel TypeNPN
- Transistor TypeNPN
- DC Current Gain (hFE) (Min) @ Ic, Vce40 @ 150mA 2V
- Current - Collector Cutoff (Max)100nA ICBO
- Vce Saturation (Max) @ Ib, Ic500mV @ 50mA, 500mA
- Voltage - Collector Emitter Breakdown (Max)45V
- Current - Collector (Ic) (Max)1.5A
- RoHS StatusNon-RoHS Compliant
BD135 Overview
DC current gain in this device equals 40 @ 150mA 2V, which is the ratio of the base current to the collector current.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 500mV @ 50mA, 500mA.A negative maximal voltage - Collector Emitter Breakdown can be observed in the device.
BD135 Features
the DC current gain for this device is 40 @ 150mA 2V
the vce saturation(Max) is 500mV @ 50mA, 500mA
BD135 Applications
There are a lot of Rochester Electronics, LLC
BD135 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
DC current gain in this device equals 40 @ 150mA 2V, which is the ratio of the base current to the collector current.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 500mV @ 50mA, 500mA.A negative maximal voltage - Collector Emitter Breakdown can be observed in the device.
BD135 Features
the DC current gain for this device is 40 @ 150mA 2V
the vce saturation(Max) is 500mV @ 50mA, 500mA
BD135 Applications
There are a lot of Rochester Electronics, LLC
BD135 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
BD135 More Descriptions
Trans GP BJT NPN 45V 1.5A 1250mW 3-Pin(3 Tab) SOT-32 Tube
45V 1.25W 1.5A NPN SOT-32 Bipolar Transistors - BJT ROHS
BD135 Series NPN 45 V 1.5 A Complementary Low Voltage Transistor - SOT-32
Power Bipolar Transistor, 1.5A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin
Bipolar Transistors - BJT NPN Audio Amplifier
TRANSISTOR, NPN, TO-126; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 45V; Transition Frequency ft: -; Power Dissipation Pd: 1.25W; DC Collector Current: 1.5A; DC Current Gain hFE: 250hFE; Transistor Case Styl
Bipolar Transistor, Npn, 45V; Transistor Polarity:Npn; Collector Emitter Voltage Max:45V; Continuous Collector Current:1.5A; Power Dissipation:12.5W; Transistor Mounting:Through Hole; No. Of Pins:3Pins; Transition Frequency:-; Msl:- Rohs Compliant: Yes |Stmicroelectronics BD135
45V 1.25W 1.5A NPN SOT-32 Bipolar Transistors - BJT ROHS
BD135 Series NPN 45 V 1.5 A Complementary Low Voltage Transistor - SOT-32
Power Bipolar Transistor, 1.5A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin
Bipolar Transistors - BJT NPN Audio Amplifier
TRANSISTOR, NPN, TO-126; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 45V; Transition Frequency ft: -; Power Dissipation Pd: 1.25W; DC Collector Current: 1.5A; DC Current Gain hFE: 250hFE; Transistor Case Styl
Bipolar Transistor, Npn, 45V; Transistor Polarity:Npn; Collector Emitter Voltage Max:45V; Continuous Collector Current:1.5A; Power Dissipation:12.5W; Transistor Mounting:Through Hole; No. Of Pins:3Pins; Transition Frequency:-; Msl:- Rohs Compliant: Yes |Stmicroelectronics BD135
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