STMicroelectronics BD135-16
- Part Number:
- BD135-16
- Manufacturer:
- STMicroelectronics
- Ventron No:
- 2846592-BD135-16
- Description:
- TRANS NPN 45V 1.5A SOT-32
- ECAD Model:
-
- Datasheet:
- BD135-16
STMicroelectronics BD135-16 technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics BD135-16.
- Lifecycle StatusNRND (Last Updated: 7 months ago)
- Factory Lead Time8 Weeks
- Contact PlatingTin
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-225AA, TO-126-3
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature150°C TJ
- PackagingTube
- JESD-609 Codee3
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- SubcategoryOther Transistors
- Max Power Dissipation1.25W
- Base Part NumberBD135
- Pin Count3
- Number of Elements1
- Element ConfigurationSingle
- Power Dissipation1.25W
- Transistor ApplicationAMPLIFIER
- Polarity/Channel TypeNPN
- Transistor TypeNPN
- Collector Emitter Voltage (VCEO)45V
- Max Collector Current1.5A
- DC Current Gain (hFE) (Min) @ Ic, Vce40 @ 150mA 2V
- Current - Collector Cutoff (Max)100nA ICBO
- Vce Saturation (Max) @ Ib, Ic500mV @ 50mA, 500mA
- Collector Emitter Breakdown Voltage45V
- Transition Frequency250MHz
- Collector Emitter Saturation Voltage500mV
- Collector Base Voltage (VCBO)45V
- Emitter Base Voltage (VEBO)5V
- hFE Min100
- Height10.8mm
- Length7.8mm
- Width2.7mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
BD135-16 Overview
In this device, the DC current gain is 40 @ 150mA 2V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 500mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 500mV @ 50mA, 500mA.With the emitter base voltage set at 5V, an efficient operation can be achieved.Single BJT transistor contains a transSingle BJT transistorion frequency of 250MHz.Single BJT transistor is possible for the collector current to fall as low as 1.5A volts at Single BJT transistors maximum.
BD135-16 Features
the DC current gain for this device is 40 @ 150mA 2V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
a transition frequency of 250MHz
BD135-16 Applications
There are a lot of STMicroelectronics
BD135-16 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
In this device, the DC current gain is 40 @ 150mA 2V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 500mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 500mV @ 50mA, 500mA.With the emitter base voltage set at 5V, an efficient operation can be achieved.Single BJT transistor contains a transSingle BJT transistorion frequency of 250MHz.Single BJT transistor is possible for the collector current to fall as low as 1.5A volts at Single BJT transistors maximum.
BD135-16 Features
the DC current gain for this device is 40 @ 150mA 2V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
a transition frequency of 250MHz
BD135-16 Applications
There are a lot of STMicroelectronics
BD135-16 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
BD135-16 More Descriptions
Trans GP BJT NPN 45V 1.5A 1250mW 3-Pin(3 Tab) SOT-32 Tube
Power Bipolar Transistor, 1.5A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin
TRANSISTOR, NPN, SOT-32; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 45V; Transition Frequency ft: -; Power Dissipation Pd: 12.5W; DC Collector Current: 1.5A; DC Current Gain hFE: 40hFE; Transistor Case Style
Transistor, Npn, Sot-32; Transistor Polarity:Npn; Collector Emitter Voltage Max:45V; Continuous Collector Current:1.5A; Power Dissipation:12.5W; Transistor Mounting:Through Hole; No. Of Pins:3Pins; Transition Frequency:-; Msl:- Rohs Compliant: Yes |Stmicroelectronics BD135-16
Power Bipolar Transistor, 1.5A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin
TRANSISTOR, NPN, SOT-32; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 45V; Transition Frequency ft: -; Power Dissipation Pd: 12.5W; DC Collector Current: 1.5A; DC Current Gain hFE: 40hFE; Transistor Case Style
Transistor, Npn, Sot-32; Transistor Polarity:Npn; Collector Emitter Voltage Max:45V; Continuous Collector Current:1.5A; Power Dissipation:12.5W; Transistor Mounting:Through Hole; No. Of Pins:3Pins; Transition Frequency:-; Msl:- Rohs Compliant: Yes |Stmicroelectronics BD135-16
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