ON Semiconductor BCX71JLT1
- Part Number:
- BCX71JLT1
- Manufacturer:
- ON Semiconductor
- Ventron No:
- 2468137-BCX71JLT1
- Description:
- TRANS PNP 45V 0.1A SOT-23
- Datasheet:
- BCX71J
ON Semiconductor BCX71JLT1 technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor BCX71JLT1.
- Lifecycle StatusLAST SHIPMENTS (Last Updated: 2 weeks ago)
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-236-3, SC-59, SOT-23-3
- Number of Pins3
- Transistor Element MaterialSILICON
- PackagingTape & Reel (TR)
- Published2005
- JESD-609 Codee0
- Pbfree Codeno
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishTin/Lead (Sn/Pb)
- Max Operating Temperature150°C
- SubcategoryOther Transistors
- Voltage - Rated DC-45V
- Max Power Dissipation350mW
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)240
- Reach Compliance Codenot_compliant
- Current Rating-100mA
- Time@Peak Reflow Temperature-Max (s)30
- Base Part NumberBCX71
- Pin Count3
- Qualification StatusNot Qualified
- Number of Elements1
- Element ConfigurationSingle
- Polarity/Channel TypePNP
- Transistor TypePNP
- Collector Emitter Voltage (VCEO)550mV
- Max Collector Current100mA
- DC Current Gain (hFE) (Min) @ Ic, Vce250 @ 2mA 5V
- Current - Collector Cutoff (Max)20nA
- Vce Saturation (Max) @ Ib, Ic550mV @ 1.25mA, 50mA
- Collector Emitter Breakdown Voltage45V
- Collector Emitter Saturation Voltage-550mV
- Collector Base Voltage (VCBO)-45V
- Emitter Base Voltage (VEBO)5V
- hFE Min40
- Turn Off Time-Max (toff)800ns
- Turn On Time-Max (ton)150ns
- RoHS StatusNon-RoHS Compliant
- Lead FreeContains Lead
BCX71JLT1 Overview
In this device, the DC current gain is 250 @ 2mA 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of -550mV ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 550mV @ 1.25mA, 50mA.Keeping the emitter base voltage at 5V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (-100mA).Maximum collector currents can be below 100mA volts.
BCX71JLT1 Features
the DC current gain for this device is 250 @ 2mA 5V
a collector emitter saturation voltage of -550mV
the vce saturation(Max) is 550mV @ 1.25mA, 50mA
the emitter base voltage is kept at 5V
the current rating of this device is -100mA
BCX71JLT1 Applications
There are a lot of ON Semiconductor
BCX71JLT1 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
In this device, the DC current gain is 250 @ 2mA 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of -550mV ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 550mV @ 1.25mA, 50mA.Keeping the emitter base voltage at 5V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (-100mA).Maximum collector currents can be below 100mA volts.
BCX71JLT1 Features
the DC current gain for this device is 250 @ 2mA 5V
a collector emitter saturation voltage of -550mV
the vce saturation(Max) is 550mV @ 1.25mA, 50mA
the emitter base voltage is kept at 5V
the current rating of this device is -100mA
BCX71JLT1 Applications
There are a lot of ON Semiconductor
BCX71JLT1 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
BCX71JLT1 More Descriptions
Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon, TO-236AB
TRANS PNP 45V 0.1A SOT-23
General Purpose Transistor
TRANS PNP 45V 0.1A SOT-23
General Purpose Transistor
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