Infineon Technologies BCX70KE6327HTSA1

Name: BCX70KE6327HTSA1
Brand: Infineon Technologies
SKU: 3585306-BCX70KE6327HTSA1
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: BCX70KE6327HTSA1

Manufacturer:: Infineon Technologies

Ventron No:: 3585306-BCX70KE6327HTSA1

Description:: TRANS NPN 45V 0.1A SOT-23

ECAD Model:

Datasheet:: BCW60, BCX70

Specifications

Infineon Technologies BCX70KE6327HTSA1 technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies BCX70KE6327HTSA1.

Factory Lead Time
4 Weeks
Contact Plating
Tin
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Published
2007
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Last Time Buy
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Voltage - Rated DC
45V
Max Power Dissipation
330mW
Terminal Position
DUAL
Terminal Form
GULL WING
Current Rating
100mA
Frequency
250MHz
Base Part Number
BCX70
Number of Elements
1
Configuration
SINGLE
Power Dissipation
330mW
Transistor Application
SWITCHING
Halogen Free
Not Halogen Free
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
550mV
Max Collector Current
100mA
DC Current Gain (hFE) (Min) @ Ic, Vce
380 @ 2mA 5V
Current - Collector Cutoff (Max)
20nA ICBO
Vce Saturation (Max) @ Ib, Ic
550mV @ 1.25mA, 50mA
Collector Emitter Breakdown Voltage
45V
Transition Frequency
250MHz
Max Breakdown Voltage
45V
Collector Base Voltage (VCBO)
45V
Emitter Base Voltage (VEBO)
6V
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

BCX70KE6327HTSA1 Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 380 @ 2mA 5V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 550mV @ 1.25mA, 50mA.The emitter base voltage can be kept at 6V for high efficiency.The current rating of this fuse is 100mA, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The part has a transition frequency of 250MHz.The breakdown input voltage is 45V volts.Single BJT transistor is possible to have a collector current as low as 100mA volts at Single BJT transistors maximum.

BCX70KE6327HTSA1 Features
the DC current gain for this device is 380 @ 2mA 5V
the vce saturation(Max) is 550mV @ 1.25mA, 50mA
the emitter base voltage is kept at 6V
the current rating of this device is 100mA
a transition frequency of 250MHz

BCX70KE6327HTSA1 Applications
There are a lot of Infineon Technologies
BCX70KE6327HTSA1 applications of single BJT transistors.

Inverter
Interface
Driver
Muting

BCX70KE6327HTSA1 More Descriptions

Trans GP BJT NPN 45V 0.1A 330mW Automotive 3-Pin SOT-23 T/R
BCX70 Series NPN 45 V 100 mA Surface Mount Silicon AF Transistor - SOT-23-3
NPN Silicon AF Transistor 45V 100mA 3-Pin SOT-23 T/R
Transistor, Bipol, Npn, 45V, Sot-23-3; Transistor Polarity:Npn; Collector Emitter Voltage V(Br)Ceo:45V; Transition Frequency Ft:250Mhz; Power Dissipation Pd:330Mw; Dc Collector Current:100Ma; Dc Current Gain Hfe:100Hfe; Transistor Rohs Compliant: Yes |Infineon BCX70KE6327HTSA1
NPN Silicon AF Transistors | Summary of Features: High current gain; Low collector-emitter saturation voltage; Low noise between 30 Hz and 15 kHz; Complementary types: BCW61, BCX71 (PNP); Pb-free (RoHS compliant) package; Qualified according AEC Q106 | Target Applications: For AF input stages and driver applications

Certification