Infineon Technologies BCX5616E6433HTMA1
- Part Number:
- BCX5616E6433HTMA1
- Manufacturer:
- Infineon Technologies
- Ventron No:
- 3585585-BCX5616E6433HTMA1
- Description:
- TRANS NPN 80V 1A SOT-89
- Datasheet:
- BCX5616E6433HTMA1
Infineon Technologies BCX5616E6433HTMA1 technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies BCX5616E6433HTMA1.
- Mounting TypeSurface Mount
- Package / CaseTO-243AA
- Surface MountYES
- Transistor Element MaterialSILICON
- Operating Temperature150°C TJ
- PackagingTape & Reel (TR)
- Published2011
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal PositionSINGLE
- Terminal FormFLAT
- Reach Compliance Codeunknown
- Base Part NumberBCX56
- JESD-30 CodeR-PSSO-F3
- Number of Elements1
- ConfigurationSINGLE
- Case ConnectionCOLLECTOR
- Power - Max2W
- Transistor ApplicationSWITCHING
- Polarity/Channel TypeNPN
- Transistor TypeNPN
- DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 150mA 2V
- Current - Collector Cutoff (Max)100nA ICBO
- Vce Saturation (Max) @ Ib, Ic500mV @ 50mA, 500mA
- Voltage - Collector Emitter Breakdown (Max)80V
- Current - Collector (Ic) (Max)1A
- Transition Frequency100MHz
- Frequency - Transition100MHz
BCX5616E6433HTMA1 Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 100 @ 150mA 2V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 500mV @ 50mA, 500mA.Parts of this part have transition frequencies of 100MHz.This device displays a 80V maximum voltage - Collector Emitter Breakdown.
BCX5616E6433HTMA1 Features
the DC current gain for this device is 100 @ 150mA 2V
the vce saturation(Max) is 500mV @ 50mA, 500mA
a transition frequency of 100MHz
BCX5616E6433HTMA1 Applications
There are a lot of Infineon Technologies
BCX5616E6433HTMA1 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 100 @ 150mA 2V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 500mV @ 50mA, 500mA.Parts of this part have transition frequencies of 100MHz.This device displays a 80V maximum voltage - Collector Emitter Breakdown.
BCX5616E6433HTMA1 Features
the DC current gain for this device is 100 @ 150mA 2V
the vce saturation(Max) is 500mV @ 50mA, 500mA
a transition frequency of 100MHz
BCX5616E6433HTMA1 Applications
There are a lot of Infineon Technologies
BCX5616E6433HTMA1 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
Popular Search Part Number
Related Keywords
Search Tags
Latest News
-
07 December 2023
All You Need to Know About the 74LS32 OR Gate
Ⅰ. What is the 74 series logic chip?Ⅱ. What is 74LS32?Ⅲ. Pin configuration and functions of 74LS32 OR GateⅣ. What are the features of 74LS32 OR Gate?Ⅴ. Internal... -
07 December 2023
TCS3200 RGB Color Sensor Equivalents, Structure, Applications and Usage
Ⅰ. Overview of TCS3200Ⅱ. Features of TCS3200 color sensorⅢ. TCS3200 symbol, footprint and pin configurationⅣ. Structure of TCS3200 color sensorⅤ. Applications of TCS3200 color sensorⅥ. Technical parameters of... -
08 December 2023
NE556 Dual Bipolar Timer Features, Function, Structure, Working Principle, and Applications
Ⅰ. What is a timer?Ⅱ. Overview of NE556Ⅲ. What are the features of NE556 dual timer?Ⅳ. Pin configuration of NE556 dual timerⅤ. Function of NE556 dual timerⅥ. Structure... -
08 December 2023
AT89C51 Microcontroller Structure, Features, Function, AT89C51 vs AT89C52 and Applications
Ⅰ. What is AT89C51?Ⅱ. Pin configuration of AT89C51 microcontrollerⅢ. Structure of AT89C51 microcontrollerⅣ. What are the features of AT89C51 microcontroller?Ⅴ. Function of AT89C51 microcontrollerⅥ. Block diagram of AT89C51...
Help you to save your cost and time.
Reliable package for your goods.
Fast Reliable Delivery to save time.
Quality premium after-sale service.