BCX56-10,135

Nexperia USA Inc. BCX56-10,135

Part Number:
BCX56-10,135
Manufacturer:
Nexperia USA Inc.
Ventron No:
2464458-BCX56-10,135
Description:
TRANS NPN 80V 1A SOT89
ECAD Model:
Datasheet:
BCX56-10,135

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Specifications
Nexperia USA Inc. BCX56-10,135 technical specifications, attributes, parameters and parts with similar specifications to Nexperia USA Inc. BCX56-10,135.
  • Factory Lead Time
    4 Weeks
  • Contact Plating
    Tin
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-243AA
  • Number of Pins
    4
  • Transistor Element Material
    SILICON
  • Operating Temperature
    150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Published
    2007
  • JESD-609 Code
    e3
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • Max Power Dissipation
    1.25W
  • Terminal Position
    SINGLE
  • Terminal Form
    FLAT
  • Frequency
    180MHz
  • Base Part Number
    BCX56
  • Pin Count
    3
  • JESD-30 Code
    R-PSSO-F3
  • Number of Elements
    1
  • Configuration
    SINGLE
  • Power Dissipation
    1.25W
  • Case Connection
    COLLECTOR
  • Transistor Application
    SWITCHING
  • Polarity/Channel Type
    NPN
  • Transistor Type
    NPN
  • Collector Emitter Voltage (VCEO)
    80V
  • Max Collector Current
    1A
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    63 @ 150mA 2V
  • Current - Collector Cutoff (Max)
    100nA ICBO
  • Vce Saturation (Max) @ Ib, Ic
    500mV @ 50mA, 500mA
  • Collector Emitter Breakdown Voltage
    80V
  • Transition Frequency
    180MHz
  • Max Breakdown Voltage
    80V
  • Collector Base Voltage (VCBO)
    100V
  • Emitter Base Voltage (VEBO)
    5V
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
Description
BCX56-10,135 Overview
DC current gain in this device equals 63 @ 150mA 2V, which is the ratio of the base current to the collector current.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 500mV @ 50mA, 500mA.An emitter's base voltage can be kept at 5V to gain high efficiency.As a result, the part has a transition frequency of 180MHz.Breakdown input voltage is 80V volts.In extreme cases, the collector current can be as low as 1A volts.

BCX56-10,135 Features
the DC current gain for this device is 63 @ 150mA 2V
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
a transition frequency of 180MHz


BCX56-10,135 Applications
There are a lot of Nexperia USA Inc.
BCX56-10,135 applications of single BJT transistors.


Inverter
Interface
Driver
Muting
BCX56-10,135 More Descriptions
Small Signal Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-243AA
Trans GP BJT NPN 80V 1A Automotive 4-Pin(3 Tab) SOT-89 T/R
BCX56-Q series - 80 V, 1 A NPN medium power transistors
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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