Nexperia USA Inc. BCX56-10,135
- Part Number:
- BCX56-10,135
- Manufacturer:
- Nexperia USA Inc.
- Ventron No:
- 2464458-BCX56-10,135
- Description:
- TRANS NPN 80V 1A SOT89
- Datasheet:
- BCX56-10,135
Nexperia USA Inc. BCX56-10,135 technical specifications, attributes, parameters and parts with similar specifications to Nexperia USA Inc. BCX56-10,135.
- Factory Lead Time4 Weeks
- Contact PlatingTin
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-243AA
- Number of Pins4
- Transistor Element MaterialSILICON
- Operating Temperature150°C TJ
- PackagingTape & Reel (TR)
- Published2007
- JESD-609 Codee3
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- Max Power Dissipation1.25W
- Terminal PositionSINGLE
- Terminal FormFLAT
- Frequency180MHz
- Base Part NumberBCX56
- Pin Count3
- JESD-30 CodeR-PSSO-F3
- Number of Elements1
- ConfigurationSINGLE
- Power Dissipation1.25W
- Case ConnectionCOLLECTOR
- Transistor ApplicationSWITCHING
- Polarity/Channel TypeNPN
- Transistor TypeNPN
- Collector Emitter Voltage (VCEO)80V
- Max Collector Current1A
- DC Current Gain (hFE) (Min) @ Ic, Vce63 @ 150mA 2V
- Current - Collector Cutoff (Max)100nA ICBO
- Vce Saturation (Max) @ Ib, Ic500mV @ 50mA, 500mA
- Collector Emitter Breakdown Voltage80V
- Transition Frequency180MHz
- Max Breakdown Voltage80V
- Collector Base Voltage (VCBO)100V
- Emitter Base Voltage (VEBO)5V
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
BCX56-10,135 Overview
DC current gain in this device equals 63 @ 150mA 2V, which is the ratio of the base current to the collector current.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 500mV @ 50mA, 500mA.An emitter's base voltage can be kept at 5V to gain high efficiency.As a result, the part has a transition frequency of 180MHz.Breakdown input voltage is 80V volts.In extreme cases, the collector current can be as low as 1A volts.
BCX56-10,135 Features
the DC current gain for this device is 63 @ 150mA 2V
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
a transition frequency of 180MHz
BCX56-10,135 Applications
There are a lot of Nexperia USA Inc.
BCX56-10,135 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
DC current gain in this device equals 63 @ 150mA 2V, which is the ratio of the base current to the collector current.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 500mV @ 50mA, 500mA.An emitter's base voltage can be kept at 5V to gain high efficiency.As a result, the part has a transition frequency of 180MHz.Breakdown input voltage is 80V volts.In extreme cases, the collector current can be as low as 1A volts.
BCX56-10,135 Features
the DC current gain for this device is 63 @ 150mA 2V
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
a transition frequency of 180MHz
BCX56-10,135 Applications
There are a lot of Nexperia USA Inc.
BCX56-10,135 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
BCX56-10,135 More Descriptions
Small Signal Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-243AA
Trans GP BJT NPN 80V 1A Automotive 4-Pin(3 Tab) SOT-89 T/R
BCX56-Q series - 80 V, 1 A NPN medium power transistors
Trans GP BJT NPN 80V 1A Automotive 4-Pin(3 Tab) SOT-89 T/R
BCX56-Q series - 80 V, 1 A NPN medium power transistors
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