Nexperia USA Inc. BCX55-16,115
- Part Number:
- BCX55-16,115
- Manufacturer:
- Nexperia USA Inc.
- Ventron No:
- 2845076-BCX55-16,115
- Description:
- TRANS NPN 60V 1A SOT89
- Datasheet:
- BCX55-16,115
Nexperia USA Inc. BCX55-16,115 technical specifications, attributes, parameters and parts with similar specifications to Nexperia USA Inc. BCX55-16,115.
- Factory Lead Time4 Weeks
- Mounting TypeSurface Mount
- Package / CaseTO-243AA
- Surface MountYES
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature150°C TJ
- PackagingTape & Reel (TR)
- Published2001
- JESD-609 Codee3
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- Terminal FinishTin (Sn)
- HTS Code8541.29.00.75
- Terminal PositionSINGLE
- Terminal FormFLAT
- Base Part NumberBCX55
- Pin Count3
- Qualification StatusNot Qualified
- Number of Elements1
- ConfigurationSINGLE
- Case ConnectionCOLLECTOR
- Power - Max1.25W
- Transistor ApplicationSWITCHING
- Polarity/Channel TypeNPN
- Transistor TypeNPN
- DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 150mA 2V
- Current - Collector Cutoff (Max)100nA ICBO
- Vce Saturation (Max) @ Ib, Ic500mV @ 50mA, 500mA
- Voltage - Collector Emitter Breakdown (Max)60V
- Current - Collector (Ic) (Max)1A
- Transition Frequency180MHz
- Frequency - Transition180MHz
- RoHS StatusROHS3 Compliant
BCX55-16,115 Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 100 @ 150mA 2V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 500mV @ 50mA, 500mA.The part has a transition frequency of 180MHz.Device displays Collector Emitter Breakdown (60V maximal voltage).
BCX55-16,115 Features
the DC current gain for this device is 100 @ 150mA 2V
the vce saturation(Max) is 500mV @ 50mA, 500mA
a transition frequency of 180MHz
BCX55-16,115 Applications
There are a lot of Nexperia USA Inc.
BCX55-16,115 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 100 @ 150mA 2V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 500mV @ 50mA, 500mA.The part has a transition frequency of 180MHz.Device displays Collector Emitter Breakdown (60V maximal voltage).
BCX55-16,115 Features
the DC current gain for this device is 100 @ 150mA 2V
the vce saturation(Max) is 500mV @ 50mA, 500mA
a transition frequency of 180MHz
BCX55-16,115 Applications
There are a lot of Nexperia USA Inc.
BCX55-16,115 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
BCX55-16,115 More Descriptions
Small Signal Bipolar Transistor, 1A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-243AA
Trans Gp Bjt Npn 60V 1A 1350mW Automotive 4-Pin(3 Tab) Sot-89 T/R
60V 500mW 1A 100@150mA,2V 180MHz 500mV@500mA,50mA NPN 150¡æ@(Tj) SOT-89 Bipolar Transistors - BJT ROHS
TRANSISTOR, NPN, 60V, 1A, SOT-89-3; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:60V; Transition Frequency ft:180MHz; Power Dissipation Pd:500mW; DC Collector Current:1A; DC Current Gain hFE:100; Operating Temperature Min:-65°C; Operating Temperature Max:150°C; Transistor Case Style:SOT-89; No. of Pins:3; MSL:(Not Available); SVHC:No SVHC (20-Jun-2013)
Trans Gp Bjt Npn 60V 1A 1350mW Automotive 4-Pin(3 Tab) Sot-89 T/R
60V 500mW 1A 100@150mA,2V 180MHz 500mV@500mA,50mA NPN 150¡æ@(Tj) SOT-89 Bipolar Transistors - BJT ROHS
TRANSISTOR, NPN, 60V, 1A, SOT-89-3; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:60V; Transition Frequency ft:180MHz; Power Dissipation Pd:500mW; DC Collector Current:1A; DC Current Gain hFE:100; Operating Temperature Min:-65°C; Operating Temperature Max:150°C; Transistor Case Style:SOT-89; No. of Pins:3; MSL:(Not Available); SVHC:No SVHC (20-Jun-2013)
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