Nexperia USA Inc. BCX54-16,135
- Part Number:
- BCX54-16,135
- Manufacturer:
- Nexperia USA Inc.
- Ventron No:
- 2845124-BCX54-16,135
- Description:
- TRANS NPN 45V 1A SOT89
- Datasheet:
- BCX54-16,135
Nexperia USA Inc. BCX54-16,135 technical specifications, attributes, parameters and parts with similar specifications to Nexperia USA Inc. BCX54-16,135.
- Factory Lead Time4 Weeks
- Contact PlatingTin
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-243AA
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature150°C TJ
- PackagingTape & Reel (TR)
- Published2011
- JESD-609 Codee3
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- Max Power Dissipation1.25W
- Terminal FormFLAT
- Frequency180MHz
- Base Part NumberBCX54
- Pin Count3
- Number of Elements1
- Element ConfigurationSingle
- Power Dissipation1.35W
- Case ConnectionCOLLECTOR
- Power - Max1.25W
- Transistor ApplicationSWITCHING
- Gain Bandwidth Product180MHz
- Polarity/Channel TypeNPN
- Transistor TypeNPN
- Collector Emitter Voltage (VCEO)45V
- Max Collector Current1A
- DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 150mA 2V
- Current - Collector Cutoff (Max)100nA ICBO
- Vce Saturation (Max) @ Ib, Ic500mV @ 50mA, 500mA
- Collector Emitter Breakdown Voltage45V
- Transition Frequency180MHz
- Max Breakdown Voltage45V
- Collector Base Voltage (VCBO)45V
- Emitter Base Voltage (VEBO)5V
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
BCX54-16,135 Overview
This device has a DC current gain of 100 @ 150mA 2V, which is the ratio between the collector current and the base current.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).The base voltage of the emitter can be kept at 5V to achieve high efficiency.In this part, there is a transition frequency of 180MHz.As a result, it can handle voltages as low as 45V volts.The maximum collector current is 1A volts.
BCX54-16,135 Features
the DC current gain for this device is 100 @ 150mA 2V
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
a transition frequency of 180MHz
BCX54-16,135 Applications
There are a lot of Nexperia USA Inc.
BCX54-16,135 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
This device has a DC current gain of 100 @ 150mA 2V, which is the ratio between the collector current and the base current.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).The base voltage of the emitter can be kept at 5V to achieve high efficiency.In this part, there is a transition frequency of 180MHz.As a result, it can handle voltages as low as 45V volts.The maximum collector current is 1A volts.
BCX54-16,135 Features
the DC current gain for this device is 100 @ 150mA 2V
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
a transition frequency of 180MHz
BCX54-16,135 Applications
There are a lot of Nexperia USA Inc.
BCX54-16,135 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
BCX54-16,135 More Descriptions
Trans GP BJT NPN 45V 1A Automotive 4-Pin(3 Tab) SOT-89 T/R
Small Signal Bipolar Transistor, 1A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon
Transistor GP BJT NPN 45V 1A 3-Pin SC-62 T/R
BIPOLAR TRANSISTOR, MED POWER, NPN, 45V,
45V 500mW 1A 100@150mA,2V 180MHz 500mV@500mA,50mA NPN 150¡æ@(Tj) SOT-89 Bipolar Transistors - BJT ROHS
BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT;
Bipolar Transistor; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:45V; Transition Frequency Typ, ft:180MHz; Power Dissipation Pd:500mW; DC Collector Current:1A; DC Current Gain Max (hfe):100 ;RoHS Compliant: Yes
Small Signal Bipolar Transistor, 1A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon
Transistor GP BJT NPN 45V 1A 3-Pin SC-62 T/R
BIPOLAR TRANSISTOR, MED POWER, NPN, 45V,
45V 500mW 1A 100@150mA,2V 180MHz 500mV@500mA,50mA NPN 150¡æ@(Tj) SOT-89 Bipolar Transistors - BJT ROHS
BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT;
Bipolar Transistor; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:45V; Transition Frequency Typ, ft:180MHz; Power Dissipation Pd:500mW; DC Collector Current:1A; DC Current Gain Max (hfe):100 ;RoHS Compliant: Yes
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