Nexperia USA Inc. BCX54-16,115
- Part Number:
- BCX54-16,115
- Manufacturer:
- Nexperia USA Inc.
- Ventron No:
- 2463083-BCX54-16,115
- Description:
- TRANS NPN 45V 1A SOT89
- Datasheet:
- BCX54-16,115
Nexperia USA Inc. BCX54-16,115 technical specifications, attributes, parameters and parts with similar specifications to Nexperia USA Inc. BCX54-16,115.
- Factory Lead Time4 Weeks
- Mounting TypeSurface Mount
- Package / CaseTO-243AA
- Surface MountYES
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature150°C TJ
- PackagingTape & Reel (TR)
- Published2007
- JESD-609 Codee3
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- Terminal FinishTin (Sn)
- Terminal PositionSINGLE
- Terminal FormFLAT
- Base Part NumberBCX54
- Pin Count3
- Qualification StatusNot Qualified
- Number of Elements1
- ConfigurationSINGLE
- Power Dissipation500mW
- Case ConnectionCOLLECTOR
- Power - Max1.25W
- Transistor ApplicationSWITCHING
- Gain Bandwidth Product180MHz
- Polarity/Channel TypeNPN
- Transistor TypeNPN
- Collector Emitter Voltage (VCEO)45V
- Max Collector Current1A
- DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 150mA 2V
- Current - Collector Cutoff (Max)100nA ICBO
- Vce Saturation (Max) @ Ib, Ic500mV @ 50mA, 500mA
- Current - Collector (Ic) (Max)1A
- Transition Frequency180MHz
- Collector Emitter Saturation Voltage500mV
- Collector Base Voltage (VCBO)45V
- Emitter Base Voltage (VEBO)5V
- hFE Min63
- Max Junction Temperature (Tj)150°C
- Ambient Temperature Range High150°C
- Height1.6mm
- RoHS StatusROHS3 Compliant
BCX54-16,115 Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 100 @ 150mA 2V DC current gain.As it features a collector emitter saturation voltage of 500mV, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 5V can result in a high level of efficiency.There is a transition frequency of 180MHz in the part.When collector current reaches its maximum, it can reach 1A volts.
BCX54-16,115 Features
the DC current gain for this device is 100 @ 150mA 2V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
a transition frequency of 180MHz
BCX54-16,115 Applications
There are a lot of Nexperia USA Inc.
BCX54-16,115 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 100 @ 150mA 2V DC current gain.As it features a collector emitter saturation voltage of 500mV, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 5V can result in a high level of efficiency.There is a transition frequency of 180MHz in the part.When collector current reaches its maximum, it can reach 1A volts.
BCX54-16,115 Features
the DC current gain for this device is 100 @ 150mA 2V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
a transition frequency of 180MHz
BCX54-16,115 Applications
There are a lot of Nexperia USA Inc.
BCX54-16,115 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
BCX54-16,115 More Descriptions
Transistor General Purpose BJT NPN 45 Volt 1A 4-Pin(3 Tab) SOT-89 T/R
Trans GP BJT NPN 45V 1A 1350mW Automotive 4-Pin(3 Tab) SOT-89 T/R
Small Signal Bipolar Transistor, 1A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, TO-243AA
NEXPERIA - BCX54-16,115 - TRANSISTOR, NPN, SOT-89
TRANSISTOR, NPN, SOT-89; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:45V; Transition Frequency ft:180MHz; Power Dissipation Pd:500mW; DC Collector Current:1A; DC Current Gain hFE:100; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:SOT-89; No. of Pins:3; MSL:-; SVHC:No SVHC (20-Jun-2013)
Transistor Polarity = NPN / Configuration = Single / Continuous Collector Current (Ic) A = 1 / Collector-Emitter Voltage (Vceo) V = 45 / DC Current Gain (hFE) = 250 / Collector-Base Voltage (Vcbo) V = 45 / Emitter-Base Voltage (Vebo) V = 5 / Operating Temperature Min. °C = -65 / Operating Temperature Max. °C = 150 / Transit Frequency MHz = 100 / Power Dissipation (Pd) mW = 500 / Package Type = SOT-89 / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Automotive Qualification Standard = AEC-Q101 / Collector Emitter Saturation Voltage Max. (Vce(sat)) mV = 500 / Base Emitter Saturation Voltage Max. (Vbe(sat)) V = 1
Trans GP BJT NPN 45V 1A 1350mW Automotive 4-Pin(3 Tab) SOT-89 T/R
Small Signal Bipolar Transistor, 1A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, TO-243AA
NEXPERIA - BCX54-16,115 - TRANSISTOR, NPN, SOT-89
TRANSISTOR, NPN, SOT-89; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:45V; Transition Frequency ft:180MHz; Power Dissipation Pd:500mW; DC Collector Current:1A; DC Current Gain hFE:100; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:SOT-89; No. of Pins:3; MSL:-; SVHC:No SVHC (20-Jun-2013)
Transistor Polarity = NPN / Configuration = Single / Continuous Collector Current (Ic) A = 1 / Collector-Emitter Voltage (Vceo) V = 45 / DC Current Gain (hFE) = 250 / Collector-Base Voltage (Vcbo) V = 45 / Emitter-Base Voltage (Vebo) V = 5 / Operating Temperature Min. °C = -65 / Operating Temperature Max. °C = 150 / Transit Frequency MHz = 100 / Power Dissipation (Pd) mW = 500 / Package Type = SOT-89 / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Automotive Qualification Standard = AEC-Q101 / Collector Emitter Saturation Voltage Max. (Vce(sat)) mV = 500 / Base Emitter Saturation Voltage Max. (Vbe(sat)) V = 1
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