Nexperia USA Inc. BCX54,115

Name: BCX54,115
Brand: Nexperia USA Inc.
SKU: 2464449-BCX54,115
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: BCX54,115

Manufacturer:: Nexperia USA Inc.

Ventron No:: 2464449-BCX54,115

Description:: TRANS NPN 45V 1A SOT89

ECAD Model:

Datasheet:: BCX54,115

Specifications

Nexperia USA Inc. BCX54,115 technical specifications, attributes, parameters and parts with similar specifications to Nexperia USA Inc. BCX54,115.

Factory Lead Time
4 Weeks
Contact Plating
Tin
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-243AA
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Published
2007
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
Max Power Dissipation
1.25W
Terminal Form
FLAT
Frequency
180MHz
Base Part Number
BCX54
Pin Count
3
Number of Elements
1
Element Configuration
Single
Power Dissipation
1.35W
Case Connection
COLLECTOR
Power - Max
1.25W
Transistor Application
SWITCHING
Gain Bandwidth Product
180MHz
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
45V
Max Collector Current
1A
DC Current Gain (hFE) (Min) @ Ic, Vce
63 @ 150mA 2V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
500mV @ 50mA, 500mA
Collector Emitter Breakdown Voltage
45V
Transition Frequency
180MHz
Collector Emitter Saturation Voltage
500mV
Max Breakdown Voltage
45V
Collector Base Voltage (VCBO)
45V
Emitter Base Voltage (VEBO)
5V
Height
1.6mm
Length
4.6mm
Width
2.6mm
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

BCX54,115 Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 63 @ 150mA 2V.With a collector emitter saturation voltage of 500mV, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 500mV @ 50mA, 500mA.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.A transition frequency of 180MHz is present in the part.There is a breakdown input voltage of 45V volts that it can take.Collector current can be as low as 1A volts at its maximum.

BCX54,115 Features
the DC current gain for this device is 63 @ 150mA 2V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
a transition frequency of 180MHz

BCX54,115 Applications
There are a lot of Nexperia USA Inc.
BCX54,115 applications of single BJT transistors.

Inverter
Interface
Driver
Muting

BCX54,115 More Descriptions

Transistor: NPN; bipolar; 45V; 1A; 0.5W; -55 150 deg.C; SMD; SOT89
Small Signal Bipolar Transistor, 1A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, TO-243AA
Trans GP BJT NPN 45V 1A 1350mW Automotive 4-Pin(3 Tab) SOT-89 T/R
NEXPERIA - BCX54,115 - TRANSISTOR, BIPOL, NPN, 45V, SOT-89-3
BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT;
Bipolar Transistor; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:45V; Transition Frequency Typ, ft:180MHz; Power Dissipation Pd:500mW; DC Collector Current:1A; DC Current Gain Max (hfe):63 ;RoHS Compliant: Yes

Certification