Diodes Incorporated BCX53TA
- Part Number:
- BCX53TA
- Manufacturer:
- Diodes Incorporated
- Ventron No:
- 3585259-BCX53TA
- Description:
- TRANS PNP 80V 1A SOT89
- ECAD Model:
-
- Datasheet:
- BCX53TA
Diodes Incorporated BCX53TA technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated BCX53TA.
- Factory Lead Time15 Weeks
- Contact PlatingTin
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-243AA
- Number of Pins4
- Weight51.993025mg
- Transistor Element MaterialSILICON
- Operating Temperature-65°C~150°C TJ
- PackagingTape & Reel (TR)
- Published2011
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Additional FeatureHIGH RELIABILITY
- SubcategoryOther Transistors
- Max Power Dissipation1W
- Terminal FormFLAT
- Peak Reflow Temperature (Cel)260
- Frequency150MHz
- Time@Peak Reflow Temperature-Max (s)40
- Base Part NumberBCX53
- Pin Count3
- JESD-30 CodeR-PSSO-F3
- Qualification StatusNot Qualified
- Number of Elements1
- Element ConfigurationSingle
- Power Dissipation1W
- Case ConnectionCOLLECTOR
- Transistor ApplicationSWITCHING
- Gain Bandwidth Product150MHz
- Polarity/Channel TypePNP
- Transistor TypePNP
- Collector Emitter Voltage (VCEO)80V
- Max Collector Current1A
- DC Current Gain (hFE) (Min) @ Ic, Vce40 @ 150mA 2V
- Current - Collector Cutoff (Max)100nA ICBO
- Vce Saturation (Max) @ Ib, Ic500mV @ 50mA, 500mA
- Collector Emitter Breakdown Voltage80V
- Transition Frequency150MHz
- Collector Emitter Saturation Voltage-500mV
- Max Breakdown Voltage80V
- Collector Base Voltage (VCBO)100V
- Emitter Base Voltage (VEBO)5V
- Height1.5mm
- Length4.5mm
- Width2.5mm
- REACH SVHCNo SVHC
- RoHS StatusROHS3 Compliant
BCX53TA Overview
In this device, the DC current gain is 40 @ 150mA 2V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of -500mV ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 500mV @ 50mA, 500mA.Keeping the emitter base voltage at 5V allows for a high level of efficiency.150MHz is present in the transition frequency.An input voltage of 80V volts is the breakdown voltage.Maximum collector currents can be below 1A volts.
BCX53TA Features
the DC current gain for this device is 40 @ 150mA 2V
a collector emitter saturation voltage of -500mV
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
a transition frequency of 150MHz
BCX53TA Applications
There are a lot of Diodes Incorporated
BCX53TA applications of single BJT transistors.
Inverter
Interface
Driver
Muting
In this device, the DC current gain is 40 @ 150mA 2V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of -500mV ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 500mV @ 50mA, 500mA.Keeping the emitter base voltage at 5V allows for a high level of efficiency.150MHz is present in the transition frequency.An input voltage of 80V volts is the breakdown voltage.Maximum collector currents can be below 1A volts.
BCX53TA Features
the DC current gain for this device is 40 @ 150mA 2V
a collector emitter saturation voltage of -500mV
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
a transition frequency of 150MHz
BCX53TA Applications
There are a lot of Diodes Incorporated
BCX53TA applications of single BJT transistors.
Inverter
Interface
Driver
Muting
BCX53TA More Descriptions
Trans GP BJT PNP 80V 1A 1000mW Automotive 4-Pin(3 Tab) SOT-89 T/R
Bipolar Transistors - BJT Pwr Mid Perf Transistor SOT89 T&R 1K
Small Signal Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon
Trans, Pnp, 80V, 1A, 150Deg C, 2W Rohs Compliant: Yes |Diodes Inc. BCX53TA
SOT-89 Bipolar Transistors - BJT ROHS
Bipolar Transistors - BJT Pwr Mid Perf Transistor SOT89 T&R 1K
Small Signal Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon
Trans, Pnp, 80V, 1A, 150Deg C, 2W Rohs Compliant: Yes |Diodes Inc. BCX53TA
SOT-89 Bipolar Transistors - BJT ROHS
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