Infineon Technologies BCX5316H6327XTSA1
- Part Number:
- BCX5316H6327XTSA1
- Manufacturer:
- Infineon Technologies
- Ventron No:
- 2476828-BCX5316H6327XTSA1
- Description:
- TRANSISTOR AF SOT89-4
- Datasheet:
- BCX5316H6327XTSA1
Infineon Technologies BCX5316H6327XTSA1 technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies BCX5316H6327XTSA1.
- Factory Lead Time4 Weeks
- Contact PlatingTin
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-243AA
- Number of Pins3
- Operating Temperature150°C TJ
- PackagingTape & Reel (TR)
- SeriesAutomotive, AEC-Q101
- Published2001
- Part StatusLast Time Buy
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- ECCN CodeEAR99
- SubcategoryOther Transistors
- Max Power Dissipation2W
- Frequency125MHz
- Number of Elements1
- ConfigurationSingle
- Voltage80V
- Current1A
- Power Dissipation1W
- Polarity/Channel TypePNP
- Transistor TypePNP
- Collector Emitter Voltage (VCEO)-80V
- Max Collector Current1A
- DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 150mA 2V
- Current - Collector Cutoff (Max)100nA ICBO
- Vce Saturation (Max) @ Ib, Ic500mV @ 50mA, 500mA
- Collector Emitter Breakdown Voltage80V
- Max Breakdown Voltage80V
- Collector Base Voltage (VCBO)100V
- Emitter Base Voltage (VEBO)5V
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
BCX5316H6327XTSA1 Overview
In this device, the DC current gain is 100 @ 150mA 2V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 500mV @ 50mA, 500mA.With the emitter base voltage set at 5V, an efficient operation can be achieved.Input voltage breakdown is available at 80V volts.Single BJT transistor is possible for the collector current to fall as low as 1A volts at Single BJT transistors maximum.
BCX5316H6327XTSA1 Features
the DC current gain for this device is 100 @ 150mA 2V
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
BCX5316H6327XTSA1 Applications
There are a lot of Infineon Technologies
BCX5316H6327XTSA1 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
In this device, the DC current gain is 100 @ 150mA 2V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 500mV @ 50mA, 500mA.With the emitter base voltage set at 5V, an efficient operation can be achieved.Input voltage breakdown is available at 80V volts.Single BJT transistor is possible for the collector current to fall as low as 1A volts at Single BJT transistors maximum.
BCX5316H6327XTSA1 Features
the DC current gain for this device is 100 @ 150mA 2V
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
BCX5316H6327XTSA1 Applications
There are a lot of Infineon Technologies
BCX5316H6327XTSA1 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
BCX5316H6327XTSA1 More Descriptions
Bipolar junction transistor, PNP, 1 A, 80 ## Fehler ##, SMD, SOT-89, BCX5316H6327XTSA1
Trans GP BJT PNP 80V 1A 2000mW Automotive 4-Pin(3 Tab) SOT-89 T/R
PNP Bipolar Transistor, SOT89, RoHSInfineon SCT
Power Bipolar Transistor, 1A I(C), 1-Element, PNP
PNP TRANSISTOR 80V 1A 1W SOT89
Trans GP BJT PNP 80V 1A 2000mW Automotive 4-Pin(3 Tab) SOT-89 T/R
PNP Bipolar Transistor, SOT89, RoHSInfineon SCT
Power Bipolar Transistor, 1A I(C), 1-Element, PNP
PNP TRANSISTOR 80V 1A 1W SOT89
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