BCX5316H6327XTSA1

Infineon Technologies BCX5316H6327XTSA1

Part Number:
BCX5316H6327XTSA1
Manufacturer:
Infineon Technologies
Ventron No:
2476828-BCX5316H6327XTSA1
Description:
TRANSISTOR AF SOT89-4
ECAD Model:
Datasheet:
BCX5316H6327XTSA1

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Specifications
Infineon Technologies BCX5316H6327XTSA1 technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies BCX5316H6327XTSA1.
  • Factory Lead Time
    4 Weeks
  • Contact Plating
    Tin
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-243AA
  • Number of Pins
    3
  • Operating Temperature
    150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Series
    Automotive, AEC-Q101
  • Published
    2001
  • Part Status
    Last Time Buy
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • ECCN Code
    EAR99
  • Subcategory
    Other Transistors
  • Max Power Dissipation
    2W
  • Frequency
    125MHz
  • Number of Elements
    1
  • Configuration
    Single
  • Voltage
    80V
  • Current
    1A
  • Power Dissipation
    1W
  • Polarity/Channel Type
    PNP
  • Transistor Type
    PNP
  • Collector Emitter Voltage (VCEO)
    -80V
  • Max Collector Current
    1A
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    100 @ 150mA 2V
  • Current - Collector Cutoff (Max)
    100nA ICBO
  • Vce Saturation (Max) @ Ib, Ic
    500mV @ 50mA, 500mA
  • Collector Emitter Breakdown Voltage
    80V
  • Max Breakdown Voltage
    80V
  • Collector Base Voltage (VCBO)
    100V
  • Emitter Base Voltage (VEBO)
    5V
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
Description
BCX5316H6327XTSA1 Overview
In this device, the DC current gain is 100 @ 150mA 2V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 500mV @ 50mA, 500mA.With the emitter base voltage set at 5V, an efficient operation can be achieved.Input voltage breakdown is available at 80V volts.Single BJT transistor is possible for the collector current to fall as low as 1A volts at Single BJT transistors maximum.

BCX5316H6327XTSA1 Features
the DC current gain for this device is 100 @ 150mA 2V
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at 5V


BCX5316H6327XTSA1 Applications
There are a lot of Infineon Technologies
BCX5316H6327XTSA1 applications of single BJT transistors.


Inverter
Interface
Driver
Muting
BCX5316H6327XTSA1 More Descriptions
Bipolar junction transistor, PNP, 1 A, 80 ## Fehler ##, SMD, SOT-89, BCX5316H6327XTSA1
Trans GP BJT PNP 80V 1A 2000mW Automotive 4-Pin(3 Tab) SOT-89 T/R
PNP Bipolar Transistor, SOT89, RoHSInfineon SCT
Power Bipolar Transistor, 1A I(C), 1-Element, PNP
PNP TRANSISTOR 80V 1A 1W SOT89
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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